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25TTS12STRPBF [INFINEON]

Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,;
25TTS12STRPBF
型号： 25TTS12STRPBF
厂家： Infineon    Infineon
描述：

Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,

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Bulletin I2135 rev. D 03/99  
SAFEIR Series  
25TTS..FP  
PHASE CONTROL SCR  
TO-220 FULLPAK  
VT  
< 1.25V @ 16A  
Description/Features  
ITSM = 300A  
The 25TTS..FP SAFEIR series of silicon  
controlled rectifiers are specifically designed for  
VRRM 800 to 1600V  
medium power switching and phase control  
applications. The glass passivation technology  
used has reliable operation up to 125° C junction  
temperature.  
Typical applications are in input rectification (soft  
start) and these products are designed to be used  
with International Rectifier input diodes, switches  
andoutputrectifierswhichareavailableinidentical  
package outlines.  
Fully isolated package (VINS = 2500 VRMS  
)
UL E78996 approved  
Output Current in Typical Applications  
Applications  
Single-phase Bridge Three-phase Bridge  
Units  
Capacitiveinputfilter =55°C, =125°C,  
18  
22  
A
T
T
J
A
commonheatsinkof1°C/W  
Major Ratings and Characteristics  
Package Outline  
Characteristics  
25TTS..FP Units  
IT(AV) Sinusoidal  
waveform  
16  
A
IRMS  
25  
upto1600  
300  
A
V
VRRM  
ITSM  
VT  
V
DRM  
/
A
@16A,TJ=25°C  
1.25  
V
dv/dt  
di/dt  
TJ  
500  
V/µs  
A/µs  
°C  
150  
TO-220 FULLPAK  
-40to125  
1
www.irf.com  
25TTS..FP SAFEIR Series  
Bulletin I2135 rev. D 03/99  
Voltage Ratings  
VRRM, maximum  
peak reverse voltage  
V
VDRM , maximum  
peak direct voltage  
V
IRRM/IDRM  
125°C  
mA  
Part Number  
25TTS08FP  
25TTS12FP  
25TTS16FP  
800  
1200  
1600  
800  
1200  
1600  
10  
Absolute Maximum Ratings  
Parameters  
25TTS..FP Units  
Conditions  
IT(AV) Max.AverageOn-stateCurrent  
16  
25  
A
@TC=85°C,180°conductionhalfsinewave  
IRMS Max.RMSOn-stateCurrent  
ITSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent  
300  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
t=0.1to10ms,novoltagereapplied  
@16A,TJ= 25°C  
350  
I2t  
Max.I2tforfusing  
450  
A2s  
630  
I2√t Max.I2√tforfusing  
6300  
1.25  
12.0  
1.0  
A2√s  
V
VTM Max.On-stateVoltageDrop  
rt  
On-state slope resistance  
mΩ  
V
TJ = 125°C  
VT(TO) ThresholdVoltage  
IRM/IDM Max.ReverseandDirect  
LeakageCurrent  
0.5  
mA  
TJ = 25 °C  
VR = rated VRRM/ VDRM  
10  
TJ = 125 °C  
IH  
HoldingCurrent  
Typ. Max.  
Anode Supply = 6V, Resistive load, Initial IT=1A  
25TTS08FP,25TTS12FP  
--  
100  
150  
mA  
100  
25TTS16FP  
IL  
Max.LatchingCurrent  
200  
mA  
AnodeSupply=6V,Resistiveload  
dv/dt Max. Rate of Rise of off-state Voltage  
di/dt Max. Rate of Rise of turned-on Current  
500  
150  
V/µs  
A/µs  
2
www.irf.com  
25TTS..FP SAFEIR Series  
Bulletin I2135 rev. D 03/99  
Triggering  
Parameters  
25TTS..FP Units  
Conditions  
PGM Max. peak Gate Power  
8.0  
2.0  
1.5  
10  
W
PG(AV) Max. average Gate Power  
+ IGM Max. paek positive Gate Current  
- VGM Max. paek negative Gate Voltage  
A
V
IGT  
Max. required DC Gate Current  
to trigger  
60  
mA  
Anode supply = 6V, resistive load, TJ = - 10°C  
Anode supply = 6V, resistive load, TJ = 25°C  
Anode supply = 6V, resistive load, TJ = 125°C  
Anode supply = 6V, resistive load, TJ = - 10°C  
Anode supply = 6V, resistive load, TJ = 25°C  
45  
20  
VGT Max. required DC Gate Voltage  
to trigger  
2.5  
2.0  
V
1.0  
0.25  
2.0  
Anode supply = 6V, resistive load, TJ = 125°C  
TJ = 125°C, VDRM = rated value  
VGD Max. DC Gate Voltage not to trigger  
IGD Max. DC Gate Current not to trigger  
mA  
TJ = 125°C, VDRM = rated value  
Switching  
Parameters  
25TTS..FP Units  
Conditions  
TJ = 25°C  
tgt  
trr  
tq  
Typical turn-on time  
0.9  
4
µs  
Typical reverse recovery time  
Typical turn-off time  
TJ = 125°C  
110  
Thermal-Mechanical Specifications  
Parameters  
25TTS..FP Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-40to125  
-40to125  
1.5  
°C  
Tstg Max.StorageTemperatureRange  
RthJC Max.ThermalResistanceJunction  
°C/W  
DCoperation  
toCase  
RthJA Max.ThermalResistanceJunction  
62  
toAmbient  
RthCS Typ.ThermalResistanceCase  
toHeatsink  
1.5  
Mountingsurface,smoothandgreased  
wt  
T
ApproximateWeight  
MountingTorque  
2(0.07)  
6(5)  
g(oz.)  
Min.  
Kg-cm  
(Ibf-in)  
Max.  
12(10)  
CaseStyle  
TO-220FULLPAK  
(94/V0)  
3
www.irf.com  
25TTS..FP SAFEIR Series  
Bulletin I2135 rev. D 03/99  
130  
120  
110  
100  
90  
130  
25TTS.. Se rie s  
25TTS.. Se rie s  
(DC ) = 1.5 °C/ W  
R
R
(DC ) = 1.5 °C/ W  
thJC  
thJC  
120  
110  
100  
C o nd u ctio n Pe riod  
Co nd uc tio n Ang le  
30°  
90  
80  
70  
60°  
90°  
30°  
60°  
120°  
180°  
90°  
120°  
80  
180°  
20  
DC  
70  
0
5
10  
15  
20  
0
5
10  
15  
25  
30  
Ave ra g e O n-sta te C urre nt (A)  
Ave ra g e On -sta te Curre nt (A)  
Fig. 1 - Current Rating Characteristics  
Fig. 2 - Current Rating Characteristics  
35  
30  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
DC  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
RMS Limit  
RMS Lim it  
Cond uc tion Ang le  
25TTS.. Se rie s  
Cond uc tion Pe riod  
25TTS.. Se rie s  
T = 125°C  
J
T
= 125°C  
J
0
0
0
5
10  
15  
20  
25  
30  
0
4
8
12  
16  
20  
Ave ra g e On-sta te Curre nt (A)  
Ave ra g e On-sta te C urre nt (A)  
Fig. 4 - On-state Power Loss Characteristics  
Fig. 3 - On-state Power Loss Characteristics  
350  
400  
At Any Ra te d Loa d C ond ition And With  
Ma xim um Non Re p e titive Surg e C urre nt  
Ve rsus Pulse Tra in Dura tion. C ontrol  
Of C ond uc tio n Ma y No t Be Ma inta ine d .  
Ra te d V  
Ap p lie d Follo wing Surge .  
RRM  
Initia l T = 125°C  
J
350  
Initia l T = 125°C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
300  
250  
200  
150  
No Volta g e Re a p p lie d  
300  
250  
200  
150  
100  
Ra te d V  
Re a p p lie d  
RRM  
25TTS.. Se rie s  
25TTS.. Se rie s  
1
10  
100  
0.01  
0.1  
1
Num be rO f Eq ua l Am plitude Ha lf Cyc le Curre nt Pulse s (N)  
Pulse Tra in Dura tion (s)  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 5 - Maximum Non-Repetitive Surge Current  
4
www.irf.com  
25TTS..FP SAFEIR Series  
Bulletin I2135 rev. D 03/99  
1000  
100  
10  
T = 25°C  
J
T = 125°C  
J
25TTS.. Se rie s  
1
0
1
2
3
4
5
Insta nta ne o us On-sta te Vo lta g e (V)  
Fig. 7 - On-state Voltage Drop Characteristics  
10  
1
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.17  
D = 0.08  
Ste a d y Sta te Va lue  
(DC Op e ra tion )  
0.1  
Sing le Pu lse  
25TTS.. Se rie s  
1
0.01  
0.0001  
0.001  
0.01  
0.1  
10  
Sq ua re Wa ve Pulse Dura tion (s)  
Fig. 8 - Thermal Impedance ZthJC Characteristics  
100  
10  
1
Re c ta ngula r g a te p ulse  
a )Re c omme nde d loa d line for  
ra te d d i/ dt: 10 V, 20 ohm s  
(1) PG M = 40 W, tp = 1 ms  
(2) PG M = 20 W, tp = 2 ms  
(3) PG M = 8 W, tp = 5 ms  
(4) PG M = 4 W, tp = 10 ms  
tr = 0.5 µs, tp >= 6 µs  
b)Re c omme nd e d loa d line fo r  
<= 30% ra te d d i/ dt: 10 V, 65 ohm s  
tr = 1 µs, tp >= 6 µs  
(a )  
(b )  
(3)  
(2) (1)  
(4)  
VG D  
IG D  
25TTS.. Se rie s  
0.1  
Fre q ue nc y Limite d b y PG (AV)  
10  
0.1  
0.001  
0.01  
1
100  
Insta nta ne ous G a te Curre nt (A)  
Fig. 9 - Gate Characteristics  
5
www.irf.com  
25TTS..FP SAFEIR Series  
Bulletin I2135 rev. D 03/99  
Outline Table  
10.6  
HOLE ø 3.4  
3.1  
10.4  
2.8  
2.6  
10°  
0.9  
0.7  
2.54 TYP.  
0.48  
0.44  
2.85  
1.15  
1.05  
2.54  
TYP.  
TYP.  
1.4  
1.3  
2.65  
R0.7 (2 PLACES)  
R0.5  
Dimensionsinmillimeters(andinches)  
5°± 0.5°  
5°± 0.5°  
Ordering Information Table  
Device Code  
25  
T
T
S
16 FP  
2
(A)  
1
2
4
5
6
3
1
2
-
-
Current Rating, RMS value  
Circuit Configuration:  
T = Single Thyristor  
Package:  
1 (K) (G) 3  
3
4
-
-
T = TO-220AC  
Type of Silicon:  
S = Converter Grade  
08 = 800V  
12 = 1200V  
16 = 1600V  
5
6
-
-
Voltage code: Code x 100 = V  
TO-220 FULLPAK  
RRM  
6
www.irf.com  
25TTS..FP SAFEIR Series  
Bulletin I2135 rev. D 03/99  
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.  
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.  
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.  
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.  
http://www.irf.com  
Fax-On-Demand: +44 1883 733420  
Data and specifications subject to change without notice.  
7
www.irf.com  

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