26MB5APBF [INFINEON]
Bridge Rectifier Diode, 1 Phase, 25A, 50V V(RRM), Silicon;型号: | 26MB5APBF |
厂家: | Infineon |
描述: | Bridge Rectifier Diode, 1 Phase, 25A, 50V V(RRM), Silicon 局域网 二极管 |
文件: | 总6页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I27177 03/03
MB High Voltage SERIES
SINGLE PHASE BRIDGE
Power Modules
Features
Universal, 3 way terminals:
push-on, wrap around or solder
High thermal conductivity package,
electrically insulated case
Center hole fixing
25 A
35 A
Excellent power/volume ratio
UL E 62320 approved
Nickel plated terminals solderable as per MIL-STD-202 Method
208; solder: Sn/Pb (60/40); solder temperature: 235-260°C
max. time: 8-10 secs
Description
A range of extremely compact, encapsulated
single phase bridge rectifiers offering efficient and
reliable operation. They are intended for use in
general purpose and instrumentation applica-
tions.
Major Ratings and Characteristics
Parameters 26MB-A 36MB-A
Units
I
I
25
70
35
55
A
O
@ T
oC
C
@50Hz
@60Hz
@50Hz
@60Hz
400
420
790
725
475
500
A
A
FSM
I2t
1130
1030
A2s
A2s
V
V
range
1400 to 1600
-55 to150
RRM
T
oC
J
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1
MB High Voltage Series
Bulletin I27177 03/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
I RRM max.
Type number
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ max.
mA
26MB..A
36MB..A
140
160
1400
1600
1500
1700
2
Forward Conduction
Parameters
26MB-A
36MB-A Units Conditions
IO
MaximumDCoutputcurrent
25
20
35
28
A
A
Resistive or inductive load
Capacitive load
@Casetemperature
65
60
°C
A
IFSM
Maximumpeak, one-cycle
non-repetitive forward current
400
420
335
350
790
475
500
400
420
1130
t=10ms Novoltage
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
InitialTJ =TJ max.
I2t
MaximumI2tforfusing
A2s t=10ms Novoltage
725
560
512
5.6
1030
800
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
730
I2√t
MaximumI2√tforfusing
11.3
KA2√s I2tfortimetx =I2√tx√tx ;
0.1≤ tx ≤10ms,VRRM=0V
VF(TO)1 Low-level of threshold voltage
VF(TO)2 High-level of threshold voltage
0.70
0.74
0.79
5.5
V
(16.7%xπ xIF(AV) <I<π xIF(AV)),@TJmax.
(I>π xIF(AV)),@TJmax.
0.75
7.0
rt1
Low-levelforwardsloperesistance
High-levelforwardsloperesistance
Maximumforwardvoltagedrop
m Ω (16.7%xπ xIF(AV) <I<π xIF(AV)),@TJmax.
(I>π xIF(AV)),@TJmax.
rt2
6.4
5.2
VFM
1.25
1.3
V
TJ =25oC, IFM =40APK(26MB)
TJ =25oC, IFM =55APK(36MB)
TJ =25oC, perdiodeatVRRM
f=50Hz,t=1s
tp=400µs
IRRM
VINS
Max.DCreversecurrent
10
10
µA
RMSisolationvoltagebaseplate
2700
2700
V
Thermal and Mechanical Specifications
Parameters
26MB-A 36MB-A Units Conditions
TJ
Junction temperature range
-55to150 oC
-55to150 oC
Tstg Storage temperature range
RthJC Max. thermalresistancejunctiontocase
RthCS Max. thermalresistance, casetoheatsink
1.7
1.35
K/W Per bridge
0.2
20
K/W Mountingsurface,smooth,flatandgreased
wt
T
Approximateweight
g
MountingTorque±10%
2.0
Nm Bridgetoheatsink
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2
MB High Voltage Series
Bulletin I27177 03/03
Ordering Information Table
Device Code
36
MB
160
A
3
1
2
4
26 = 25A (Avg)
36 = 35A (Avg)
1
2
-
-
Current rating code:
Circuit configuration:
MB = Single phase european coding
3
4
-
-
Voltage code: MB series = code x 10 = VRRM
Diode bridge rectifier:
A = 26MB, 36MB Series
Outline Table
0.8 (.03)
6.3 (.25)
Suggested plugging force:
200 N max; axially applied to faston terminals
Not To Scale
All dimensions in millimetres (inches)
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3
MB High Voltage Series
Bulletin I27177 03/03
1000
100
10
150
26MB..A Series
130
110
90
Tj = 150˚C
180˚
(Rect)
Tj = 25˚C
180˚
(Sine)
70
26MB..A Series
50
1
0.5
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Allowable Ambient Te
50
RthSA = 1 K/W - Delta R
26MB..A Series
Tj = 150˚C
180˚
(Sine)
40
30
20
10
0
2 K/W
3 K/W
4 K/W
5 K/W
7 K/W
180˚
(Rect)
10 K/W
0
5
10
15
20
25
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
50
75 100 125 150
Average Forward Current (A)
400
350
300
250
200
150
100
450
350
250
150
50
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge
Initial Tj = 150˚C
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated Vrrm Reapplied
26MB..A Series
26MB..A series
10
1
100
0.01
0.1
1
Number of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
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4
MB High Voltage Series
Bulletin I27177 03/03
150
130
110
90
1000
100
10
36MB..A Series
Tj = 150˚C
180˚
(Rect)
Tj = 25˚C
180˚
70
(Sine)
36MB..A Series
50
1
0.5
0
5
10 15 20 25 30 35 40
1
1.5
2
2.5
3
3.5
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 6 - Current Ratings Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Allowable Ambient Te
80
36MB..A Series
Tj = 150˚C
180˚
60
40
20
0
(Sine)
1 K/W
2 K/W
180˚
(Rect)
4 K/W
5 K/W
0
5
10
15
20
25
30
3
5
25
50
75 100 125 150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
500
450
400
350
300
250
200
150
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150˚C
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
450
400
350
300
250
200
150
100
No Voltage Reapplied
Rated Vrrm Reapplied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
36MB..A Series
36MB..A Series
10
0.01
0.1
1
1
100
Pulse Train Duration (s)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
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5
MB High Voltage Series
Bulletin I27177 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial and Consumer Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
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