2N6766SCC5205/013PBF [INFINEON]

Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA;
2N6766SCC5205/013PBF
型号: 2N6766SCC5205/013PBF
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

文件: 总11页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N6766T1

N-CHANNEL MOSFET
MICROSEMI

2N6766T1E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MICROSEMI

2N6766TXV

Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
MICROSEMI

2N6767

N-Channel Power MOSFETs, 15A, 350V/400V
FAIRCHILD

2N6767

N-CHANNEL ENHANCEMENT-MODE
NJSEMI

2N6767

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IXYS

2N6768

N-Channel Power MOSFETs, 15A, 350V/400V
FAIRCHILD

2N6768

N-CHANNEL MOSFET
MICROSEMI

2N6768

N-CHANNEL ENHANCEMENT-MODE
NJSEMI

2N6768

N-CHANNEL POWER MOSFET
SEME-LAB

2N6768

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IXYS

2N6768T1

N-CHANNEL MOSFET
MICROSEMI