2N6770 [INFINEON]
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging;
| 型号： | 2N6770 |
| 厂家： | 
Infineon |
| 描述： | 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging 局域网 晶体管 |
| 文件： | 总7页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 90330G
IRF450
JANTX2N6770
JANTXV2N6770
500V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF450
500V
12A
0.400
TO-3 (TO-204AA)
Description
Features
HEXFET® MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry and
unique processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with high trans
conductance; superior reverse energy and diode recovery dv/dt
capability.
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
Value
Parameter
Units
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current
12
A
7.75
48
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
150
1.2
± 20
8.0
12
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Lead Temperature
15
mJ
V/ns
3.5
-55 to + 150
TSTG
°C
g
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (Typical)
Weight
For footnotes refer to the page 2.
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2019-07-01
International Rectifier HiRel Products, Inc.
IRF450
JANTX2N6770/JANTXV2N6770
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
V/°C Reference to 25°C, ID = 1.0mA
500
–––
–––
–––
–––
–––
V
BVDSS/TJ
Breakdown Voltage Temp. Coefficient
0.78 –––
RDS(on)
–––
–––
0.4
0.5
VGS = 10V, ID2 = 7.75A
Static Drain-to-Source On-Resistance
VGS = 10V, ID1 = 12A
VGS(th)
Gate Threshold Voltage
2.0
5.5
–––
–––
–––
–––
55
–––
–––
–––
–––
–––
––– -100
–––
–––
4.0
–––
25
250
100
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID2 = 7.75A
VDS = 400V, VGS = 0V
Gfs
IDSS
Forward Transconductance
Zero Gate Voltage Drain Current
µA
nA
V
DS = 400V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
QG
120
19
ID1 = 12A
QGS
Gate-to-Source Charge
5.0
VDS = 250V
nC
ns
QGD
td(on)
tr
td(off)
tf
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
27
–––
–––
–––
–––
–––
70
35
190
170
130
VGS = 10V
–––
–––
–––
–––
VDD = 250V
ID1 = 12A
RG = 2.35
VGS = 10V
Measured from Drain lead (6mm /
0.25 in from package) to Source
lead (6mm/ 0.25 in from package)
Ls +LD
Total Inductance
–––
6.1
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2700 –––
–––
–––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
600
240
–––
–––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– –––
––– –––
––– –––
12
48
A
ISM
VSD
trr
1.7
V
TJ = 25°C,IS= 12A, VGS = 0V
TJ = 25°C,IF = 12A,VDD 30V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1600
––– ––– 14
ns
µC
Qrr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
RJC
RJA
–––
–––
0.83
°C/W
Junction-to-Ambient (Typical socket mount)
–––
–––
30
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 0.111mH, Peak IL = 12A, VGS = 10V.
ISD 12A, di/dt 130A/µs, VDD 500V, TJ 150°C. Suggested RG =2.35 Ω
Pulse width 300 µs; Duty Cycle 2%
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2019-07-01
International Rectifier HiRel Products, Inc.
IRF450
JANTX2N6770/JANTXV2N6770
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
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2019-07-01
International Rectifier HiRel Products, Inc.
IRF450
JANTX2N6770/JANTXV2N6770
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 10. Maximum Avalanche Energy
Fig 9. Maximum Drain Current Vs. Case Temperature
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
International Rectifier HiRel Products, Inc.
4
2019-07-01
IRF450
JANTX2N6770/JANTXV2N6770
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
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2019-07-01
International Rectifier HiRel Products, Inc.
IRF450
JANTX2N6770/JANTXV2N6770
Case Outline and Dimensions - TO-204AA (Modified TO-3)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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2019-07-01
International Rectifier HiRel Products, Inc.
IRF450
JANTX2N6770/JANTXV2N6770
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
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2019-07-01
International Rectifier HiRel Products, Inc.
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