2N6786PBF [INFINEON]

Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;
2N6786PBF
型号: 2N6786PBF
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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