2N6851EA [INFINEON]
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,;型号: | 2N6851EA |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
文件: | 总11页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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