2N7219PBF [INFINEON]
Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN;
| 型号： | 2N7219PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/596
100V Thru 500V, Up to 28A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
FEATURES
• Repetitive Avalanche Rating
• Isolated and Hermetically Sealed
• Low RDS(on)
• Ease of Paralleling
• Ceramic Feedthroughs
• Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. Itis
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25 C
PART NUMBER
VDS, Volts
RDS(on)
I Amps
D,
2N7218
2N7219
2N7221
2N7222
100
200
400
500
.070
.18
.55
28
18
10
8
.85
SCHEMATIC
MECHANICAL OUTLINE
.545
.535
.050
.040
.144 DIA.
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.800
.790
.685
.665
.550
.530
1 2 3
.550
.510
.005
.045
.035
.150 TYP.
.260
.249
.150 TYP.
3.1- 1
7 03 R0
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS(TC = 25°C unless otherwise noted
Parameter
JANTXV, JANTX, 2N7218
Units
A
I@ VGS = 10V, TC = 25°C Continuous Drain Current
28
20
D
I@ VGS = 10V, TC = 100°C Continuous Drain Current
A
D
1
I
Pulsed Drain Current
112
125
1.0
A
DM
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-Source Voltage
W
W/°C
V
VGS
EAS
± 20
2
4
Single Pulse Avalanche Energy
Avalanche Current1
250
mJ
A
4
I
28
AR
4
EAR
TJ
TSTG
Repetitive Avalanche Energy1
Operating Junction
Storage Temperature Range
Lead Temperature
12.5
mJ
°C
°C
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS@ T = 25°C (Unless Otherwise Specified)
J
Parameter
Min.
100
Typ.
Max. Units
V
Test Conditions
BVDSS Drain-Source
VGS =0V,ID =1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source
On-State Resistance
3
3
---
---
2.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
0.077
0.125
4.0
25
250
100
-100
59
16
30.7
21
105
64
65
VGS =10V,ID = 20 A
VGS =10V,ID = 28 A
VGS(th) Gate Threshold Voltage
V
VDS = VGS,ID = 250 µA
VDS = 80 V, VGS = 0V
VDS = 80 V, VGS = 0V, TJ= 125°C
VGS = 20 V
I
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward ---
Gate -to-Source Leakage Reverse ---
DSS
µA
---
I
nA
nA
nC
nC
nC
ns
ns
ns
ns
GSS
I
GSS
VGS = -20 V
VGS =10V,ID = 28A
VDS = 50 V
QG(on) On-state Gate Charge
---
---
---
---
---
---
---
QGS
QGd
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
See note 4
t
VDD =50V,ID = 20A, RG =9.1
See note 4
D(on)
t
r
t
D(off)
t
r
Source-Drain Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Min.
---
---
Typ.
---
---
Max. Units
Test Conditions
VSD
t
trr
1.5
V
TJ = 25°C, IS = 28A 3,V = 0 V
GS
3
400
ns
TJ= 25°C, IF= 28A,di/dt<100A/µs
Thermal Resistance
Parameter
Min.
---
Typ.
---
Max. Units
1.0
Test Conditions
Mounting surface flat,
RthJC
Junction-to-Case
RthCS Case-to-sink
---
---
0.21
---
--- °C/W smooth, and greased
RthJA
Junction-to-Ambient
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD= 25V, Starting TJ= 25°C,L>480 µH, RG = 25 , Peak IL= 28A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS(TC = 25°C unless otherwise noted
Parameter
JANTXV, JANTX, 2N7219
Units
A
I@ VGS = 10V, TC = 25°C Continuous Drain Current
18
11
D
I@ VGS = 10V, TC = 100°C Continuous Drain Current
A
D
1
I
Pulsed Drain Current
72
A
DM
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-Source Voltage
125
1.0
± 20
W
W/°C
V
VGS
EAS
2
4
Single Pulse Avalanche Energy
Avalanche Current1
450
mJ
A
4
I
18
AR
4
EAR
TJ
TSTG
Repetitive Avalanche Energy1
Operating Junction
Storage Temperature Range
Lead Temperature
12.5
mJ
°C
°C
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS@ T = 25°C (Unless Otherwise Specified)
J
Parameter
Min.
200
Typ.
Max. Units
V
Test Conditions
BVDSS Drain-Source
VGS =0V,ID =1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source
On-State Resistance
3
3
---
---
2.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
0.18
0.25
4.0
25
250
100
-100
60
10.6
37.6
20
VGS =10V,ID = 11 A
VGS =10V,ID = 18 A
VGS(th) Gate Threshold Voltage
V
VDS = VGS,ID = 250 µA
VDS = 160 V, VGS = 0V
VDS = 160 V, VGS = 0V, TJ= 125°C
VGS = 20 V
I
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward ---
Gate -to-Source Leakage Reverse ---
DSS
µA
---
I
nA
nA
nC
nC
nC
ns
ns
ns
ns
GSS
I
GSS
VGS = -20 V
VGS =10V,ID = 18A
VDS = 100 V
QG(on) On-state Gate Charge
---
---
---
---
---
---
---
QGS
QGd
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
See note 4
t
VDD = 100 V, ID = 11A, RG =9.1
See note 4
D(on)
t
105
58
67
r
t
D(off)
t
r
Source-Drain Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Min.
---
---
Typ.
---
---
Max. Units
Test Conditions
VSD
t
trr
1.5
V
TJ = 25°C, IS = 18A 3,V = 0 V
GS
3
500
ns
TJ= 25°C, IF= 18A,di/dt<100A/µs
Thermal Resistance
Parameter
Min.
---
Typ.
---
Max. Units
1.0
Test Conditions
Mounting surface flat,
RthJC
Junction-to-Case
RthCS Case-to-sink
---
---
0.21
---
--- °C/W smooth, and greased
RthJA
Junction-to-Ambient
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD= 50V, Starting TJ= 25°C,L>2.1mH, RG = 25 , Peak IL= 18A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS(TC = 25°C unless otherwise noted
Parameter
JANTXV, JANTX, 2N7221
Units
A
I@ VGS = 10V, TC = 25°C Continuous Drain Current
10
6.0
40
D
I@ VGS = 10V, TC = 100°C Continuous Drain Current
A
D
1
I
Pulsed Drain Current
A
DM
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-Source Voltage
125
1.0
± 20
W
W/°C
V
VGS
EAS
2
4
Single Pulse Avalanche Energy
Avalanche Current1
650
mJ
A
4
I
10
AR
4
EAR
TJ
TSTG
Repetitive Avalanche Energy1
Operating Junction
Storage Temperature Range
Lead Temperature
12.5
mJ
°C
-55 to 150
300 (.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS@ T = 25°C (Unless Otherwise Specified)
J
Parameter
Min.
400
Typ.
Max. Units
V
Test Conditions
BVDSS Drain-Source
VGS =0V,ID =1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source
On-State Resistance
3
---
---
2.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
0.55
0.70
4.0
25
250
100
-100
65
10
40.5
25
92
79
VGS = 10 V, ID = 6.0 A
VGS =10V,ID = 10 A
3
VGS(th) Gate Threshold Voltage
V
VDS = VGS,ID = 250 µA
VDS = 320 V, VGS = 0V
VDS = 320 V, VGS = 0V, TJ= 125°C
VGS = 20 V
I
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward ---
Gate -to-Source Leakage Reverse ---
DSS
µA
---
I
nA
nA
nC
nC
nC
ns
ns
ns
ns
GSS
I
GSS
VGS = -20 V
VGS =10V,ID = 10A
VDS = 200 V
QG(on) On-state Gate Charge
---
---
---
---
---
---
---
QGS
QGd
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
See note 4
t
VDD = 200 V, ID = 6A, RG = 9.1
See note 4
D(on)
t
r
t
D(off)
t
r
58
Source-Drain Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Min.
---
---
Typ.
---
---
Max. Units
Test Conditions
VSD
t
trr
1.5
V
TJ = 25°C, IS = 10A 3,V = 0 V
GS
3
600
ns
TJ= 25°C, IF= 10A,di/dt<100A/µs
Thermal Resistance
Parameter
Min.
---
Typ.
---
Max. Units
1.0
Test Conditions
Mounting surface flat,
RthJC
Junction-to-Case
RthCS Case-to-sink
---
---
0.21
---
--- °C/W smooth, and greased
RthJA
Junction-to-Ambient
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD= 50V, Starting TJ= 25°C,L>11.4mH, RG = 25 , Peak IL= 10A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS(TC = 25°C unless otherwise noted
Parameter
JANTXV, JANTX, 2N7222
Units
A
I@ VGS = 10V, TC = 25°C Continuous Drain Current
8.0
5.0
D
I@ VGS = 10V, TC = 100°C Continuous Drain Current
A
D
1
I
Pulsed Drain Current
32
A
DM
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-Source Voltage
125
1.0
W
W/°C
V
VGS
EAS
± 20
2
4
Single Pulse Avalanche Energy
Avalanche Current1
700
mJ
A
4
I
8.0
AR
4
EAR
TJ
TSTG
Repetitive Avalanche Energy1
Operating Junction
Storage Temperature Range
Lead Temperature
12.5
mJ
°C
°C
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS@ T = 25°C (Unless Otherwise Specified)
J
Parameter
Min.
500
Typ.
Max. Units
V
Test Conditions
BVDSS Drain-Source
VGS =0V,ID =1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source
On-State Resistance
3
---
---
2.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
0.85
0.95
4.0
25
250
100
-100
68.5
12.5
42.4
21
VGS =10V,ID = 5.0 A
VGS =10V,ID = 8.0 A
3
VGS(th) Gate Threshold Voltage
V
VDS = VGS,ID = 250 µA
VDS = 400 V, VGS = 0V
VDS = 400 V, VGS = 0V, TJ= 125°C
VGS = 20 V
I
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward ---
Gate -to-Source Leakage Reverse ---
DSS
µA
---
I
nA
nA
nC
nC
nC
ns
ns
ns
ns
GSS
I
GSS
VGS = -20 V
VGS =10V,ID = 8.0A
VDS = 250 V
QG(on) On-state Gate Charge
---
---
---
---
---
---
---
QGS
QGd
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
See note 4
t
VDD = 250 V, ID = 5.0A, RG = 9.1
See note 4
D(on)
t
73
72
51
r
t
D(off)
t
r
Source-Drain Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Min.
---
---
Typ.
---
---
Max. Units
Test Conditions
VSD
t
trr
1.5
V
TJ = 25°C, IS = 8.0A 3,V = 0 V
GS
3
700
ns
TJ= 25°C, IF= 8.0A,di/dt<100A/µs
Thermal Resistance
Parameter
Min.
---
Typ.
---
Max. Units
1.0
Test Conditions
Mounting surface flat,
RthJC
Junction-to-Case
RthCS Case-to-sink
---
---
0.21
---
--- °C/W smooth, and greased
RthJA
Junction-to-Ambient
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD= 50V, Starting TJ= 25°C,L>20 mH, RG = 25 , Peak IL= 8A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
相关型号：
2N7221D
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
2N7221DPBF
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
2N7221PBF
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
INFINEON
2N7222D
Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
2N7222DPBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
2N7222U
Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
©2020 ICPDF网 联系我们和版权申明