2N7580T1 [INFINEON]

Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-254AA, 3 PIN;


型号：	2N7580T1
厂家：	Infineon
描述：	Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-254AA, 3 PIN 局域网开关脉冲晶体管
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PD-94723E

2N7580T1

IRHMS67160

100V, N-CHANNEL

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

Product Summary

Part Number Radiation Level RDS(on)

IRHMS67160 100K Rads (Si) 0.011Ω 45A*

IRHMS63160 300K Rads (Si) 0.011Ω 45A*

Low-Ohmic

TO-254AA

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

512

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

6.3

V/ns

dv/dt

-55 to 150

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

11/23/10

IRHMS67160, 2N7580T1

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.12

—

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.011

Ω

= 12V, I = 45A Ã

DS(on)

GS D

2.0

—

-10.62

—

4.0

—

mV/°C

= V , I = 1.0mA

GS(th)

∆V

/∆T

GS(th)

= 15V, I

= 45A Ã

= 80V, V = 0V

DSS

µA

—

= 80V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

6.8

100

-100

170

125

= 20V

= -20V

GSS

= 12V, I = 45A

d(on)

GS D

= 50V

= 50V, I = 45A,

= 12V, R = 2.35Ω

d(off)

+ L

—

Measured from Drain lead

( 6mm / 0.025 in from package )

to Source lead ( 6mm/ 0.025 in

from package )

Ciss

Input Capacitance

—

8877

1600

20.5

—

= 0V, V

= 25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

oss

rss

f = 1.0MHz, open drain

Ω

1.05

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

45*

180

1.2

500

6.4

µC

T = 25°C, I = 45A, V

= 0V Ã

T = 25°C, I = 45A, di/dt ≤ 100A/µs

≤ 25V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

thCS

thJA

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

—

0.21

—

0.60

—

°C/W

Typical socket mount

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHMS67160, 2N7580T1

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Up to 300K Rads (Si)¹Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

100

2.0

—

4.0

100

-100

= 0V, I = 1.0mA

GS D

DSS

= V , I = 1.0mA

GS(th)

= 20V

GSS

µA

= -20V

GSS

= 80V, V = 0V

DSS

DS(on)

On-State Resistance (TO-3)

Diode Forward Voltage

—

0.011

1.2

Ω

= 12V, I = 45A

= 0V, I = 45A

1. Part numbers IRHMS67160 and IRHMS63160

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

LET

Energy

Range

VDS (V)

(MeV/(mg/cm²))

(MeV)

(µm)

@VGS=

-5V

@VGS=

-10V

@VGS=

-15V

@VGS=

-19V

@VGS=

-20V

39 ± 5%

61 ± 5%

90 ± 5%

315 ± 5%

345 ± 5%

375 ± 7.5%

40 ± 5%

32 ± 7.5%

29 ± 7.5%

100

120

100

LET=39 ± 5%

LET=61 ± 5%

LET=90 ± 5%

-5

-10

-15

-20

Bias VGS (V)

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHMS67160, 2N7580T1

Pre-Irradiation

1000

100

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

VGS

15V

12V

TOP

10V

9.0V

8.0V

7.0V

6.0V

100

BOTTOM 5.0V

5.0V

20µs PULSE WIDTH

Tj = 150°C

20µs PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

1000

100

45A

2.0

1.5

1.0

0.5

0.0

= 150°C

= 25°C

= 25V

s PULSE WIDTH

0µ

=12V

-60 -40 -20

20 40 60 80 100 120 140 160

5.5

6.5

7.5

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

Pre-Irradiation

IRHMS67160, 2N7580T1

= 45A

= 150°C

= 25°C

= 150°C

= 25°C

= 12V

20 40 60 80 100 120 140 160 180 200

, Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 5. Typical On-Resistance Vs

Fig 6. Typical On-Resistance Vs

GateVoltage

DrainCurrent

140

6.0

5.5

5.0

4.5

4.0

3.5

3.0

= 1.0mA

130

120

110

100

= 50µA

2.5

2.0

1.5

1.0

= 250µA

= 1.0mA

= 150mA

-60 -40 -20

20 40 60 80 100 120 140 160

-60 -40 -20

20 40 60 80 100 120 140 160

, Temperature ( °C )

T , Temperature ( °C )

Fig 7. Typical Drain-to-Source

Fig 8. Typical Threshold Voltage Vs

Breakdown Voltage Vs Temperature

Temperature

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IRHMS67160, 2N7580T1

Pre-Irradiation

14000

100KHz

= 0V,

f = 1MHz

= 45A

= 80V

= 50V

= 20V

= C + C

SHORTED

iss

gd ,

= C

12000

10000

8000

6000

4000

2000

rss

= C + C

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

120

160

200

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 10. Typical Gate Charge Vs.

Fig 9. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-Source Voltage

1000

100

LIMITED BY PACKAGE

= 150°C

= 25°C

= 0V

1.0

0.2

0.4

0.6 0.8

1.0 1.2

1.4

1.6

100

125

150

T , Case Temperature ( C)

, Source-to-Drain Voltage (V)

Fig 12. Maximum Drain Current Vs.

Fig 11. Typical Source-Drain Diode

CaseTemperature

ForwardVoltage

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Pre-Irradiation

IRHMS67160, 2N7580T1

1000

1200

1000

800

600

400

200

OPERATION IN THIS AREA

LIMITED BY R (on)

TOP

20A

28.5A

45A

100

BOTTOM

100 s

1ms

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

100

1000

100

125

150

, Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

Fig 13. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy

Vs. DrainCurrent

D = 0.50

0.20

0.10

0.1

0.01

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRHMS67160, 2N7580T1

Pre-Irradiation

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01

Ω

Fig 16a. Unclamped Inductive Test Circuit

Fig 16b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

12V

.3µF

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 17a. Basic Gate Charge Waveform

Fig 17b. Gate Charge Test Circuit

R_D

V_DS

90%

V_GS

V_DD

D.U.T.

R_G

10%

V_GS

PulseWidth ≤ 1 µs

Duty Factor ≤ 0.1 %

d(on)

d(off)

Fig 18b. Switching Time Waveforms

Fig 18a. Switching Time Test Circuit

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Pre-Irradiation

Footnotes:

IRHMS67160, 2N7580T1

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

Á V

= 25V, starting T = 25°C, L = 0.51 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 45A, V

= 12V

Å Total Dose Irradiation with V

Bias.

Â I

≤ 45A, di/dt ≤ 650A/µs,

= 0 during

80 volt V

applied and V

≤ 100V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —Low-Ohmic TO-254AA

0.12 [.005]

13.84 [.545]

6.60 [.260]

3.78 [.149]

3.53 [.139]

13.59 [.535]

6.32 [.249]

1.27 [.050]

1.02 [.040]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

13.84 [.545]

13.59 [.535]

14.48 [.570]

12.95 [.510]

0.84 [.033]

MAX.

1.14 [.045]

0.89 [.035]

3.81 [.150]

0.36 [.014]

B A

NOTES:

PIN ASSIGNMENTS

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: INCH.

1 = DRAIN

2 = SOURCE

3 = GATE

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 11/2010

www.irf.com

2N7580T1 [INFINEON]

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