2N7632UC [INFINEON]
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET; 辐射HARDENED60V ，组合1N -1P - CHANNELLOGIC级功率MOSFET
| 型号： | 2N7632UC |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
| 文件： | 总16页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED
60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
TECHNOLOGY
Product Summary
Part Number
Radiation Level
CHANNEL
R
I
D
DS(on)
0.89A
-0.65A
0.89A
-0.65A
0.75Ω
1.60Ω
0.75Ω
1.60Ω
N
P
N
P
IRHLUC7670Z4
100K Rads (Si)
IRHLUC7630Z4
300K Rads (Si)
LCC-6
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
Features:
n
5V CMOS and TTL Compatible
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
0.89
P-Channel
-0.65
-0.41
-2.6
Units
I @ V
= ±4.5V, T = 25°C Continuous Drain Current
D
GS
GS
C
A
I @ V
D
= ±4.5V, T =100°C Continuous Drain Current
0.56
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
3.56
DM
@ T = 25°C
P
D
1.0
1.0
W
W/°C
V
C
0.01
0.01
V
±10
±10
GS
E
20 Á
0.89
34 ²
-0.65
0.1
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
Operating Junction
0.1
mJ
V/ns
AR
dv/dt
4.7 Â
-5.6 ³
T
-55 to 150
J
T
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
°C
g
STG
300 (for 5s)
0.2 (Typical)
For footnotes refer to the last page
www.irf.com
1
10/18/10
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
Electrical Characteristics For N-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.07
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.75
Ω
V = 4.5V, I = 0.56A
GS D
DS(on)
Ã
V
Gate Threshold Voltage
1.0
—
0.25
—
—
-4.5
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
V
= 10V, I
= 0.56A Ã
DS
I
Zero Gate Voltage Drain Current
= 48V ,V = 0V
DSS
DS
GS
—
V
= 48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
33
100
-100
3.6
1.5
1.8
8.0
15
30
12
—
V
= 10V
= -10V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 4.5V, I = 0.89A
g
gs
gd
d(on)
r
GS D
V
= 30V
DS
t
t
t
t
V
V
= 30V, I = 0.89A,
= 5.0V, R = 24Ω
DD
GS
D
ns
G
d(off)
f
L
+ L
S
D
Measured from the center of
drain pad to center of source pad
nH
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
145
43
2.5
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
C
pF
oss
rss
R
—
8.2
—
Ω
f = 1.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per N Channel Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
0.89
3.56
1.2
65
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 0.89A, V
= 0V Ã
j
S
GS
T = 25°C, I = 0.89A, di/dt ≤ 100A/µs
j
F
V
Q
67
≤ 25V Ã
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per N Channel Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
125
Typical socket mount
thJA
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
Electrical Characteristics For P-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -250µA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.06
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
—
—
1.60
Ω
V
= -4.5V, I = -0.41A
GS D
DS(on)
Ã
-1.0
—
0.5
—
—
3.6
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
V
= V , I = -250µA
GS(th)
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
= -10V, I
= -0.41A Ã
DS
DS
I
Zero Gate Voltage Drain Current
V = -48V ,V = 0V
DS GS
DSS
—
V
= -48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
33
-100
100
3.6
1.5
1.8
23
22
32
26
—
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
nC
V
= -4.5V, I = -0.65A
g
gs
gd
d(on)
r
GS D
V
DS
= -30V
t
t
t
t
V
DD
= -30V, I = -0.65A,
D
ns
V
= -5.0V, R = 24Ω
GS G
d(off)
f
L
+ L
S
D
Measured from the center of
drain pad to center of source pad
nH
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
147
46
8.1
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
C
C
pF
oss
rss
R
—
52
—
Ω
f = 1.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per P Channel Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-0.65
-2.6
-5.0
35
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -0.65A, V
= 0V Ã
j
S
GS
T = 25°C, I = -0.65A, di/dt ≤ -100A/µs
j
F
Q
9.8
V
DD
≤ -25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per P Channel Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
125
Typical socket mount
thJA
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
Radiation Characteristics
IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Upto 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
1.0
—
—
—
—
2.0
100
-100
1.0
V
V
= 0V, I = 250µA
DSS
GS D
V
V
= V , I = 250µA
GS
GS(th)
DS
D
I
V
= 10V
GSS
GS
nA
µA
I
V
GS
= -10V
GSS
I
V
= 48V, V = 0V
GS
DSS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (LCC-6)
—
0.60
Ω
V
= 4.5V, I = 0.56A
D
GS
GS
R
DS(on)
—
—
0.75
1.2
Ω
V
= 4.5V, I = 0.56A
D
V
SD
Diode Forward Voltage
V
V = 0V, I = 0.89A
GS
D
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-2V
@VGS=
-4V
@VGS=
-5V
@VGS=
-6V
@VGS=
-7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
60
60
60
60
60
60
60
60
60
60
60
40
60
30
-
35
-
-
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
VGS
-4
-5
-6
-7
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
www.irf.com
Radiation Characteristics
IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Upto 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-60
-1.0
—
—
—
—
V
V
= 0V, I = -250µA
DSS
GS D
V
V
-2.0
-100
100
-1.0
= V , I = -250µA
GS
GS(th)
DS
D
I
V
V
GS
= -10V
= 10V
GSS
GS
nA
I
GSS
I
µA
V
= -48V, V = 0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
—
1.40
Ω
V
GS
= -4.5V, I = -0.41A
D
R
DS(on)
Static Drain-to-Source On-state
Resistance (LCC-6)
—
—
1.60
-5.0
Ω
V
= -4.5V, I = -0.41A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = -0.65A
GS
D
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
2V
@VGS=
4V
@VGS=
5V
@VGS=
6V
@VGS=
7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-
-50
-
-
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
N-Channel
Die 1
10
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.0V
3.5V
3.0V
2.75V
7.0V
5.0V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
BOTTOM 2.5V
1
1
2.5V
2.5V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= 0.89A
D
T
= 150°C
J
1
T
= 25°C
V
J
= 25V
DS
0µ
6
s PULSE WIDTH
V
= 4.5V
GS
0.1
2
2.5
V
3
3.5
4
4.5
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
6
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
N-Channel
Die 1
3.0
2.5
2.0
1.5
1.0
0.5
0
1.6
I
= 0.89A
D
1.4
1.2
1.0
0.8
0.6
0.4
T
= 150°C
= 25°C
J
T
= 150°C
= 25°C
J
T
J
T
J
Vgs = 4.5V
2.5
2
3
4
5
6
7
8
9
10 11 12
0
0.5
1.0
1.5
2.0
3.0
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 6. Typical On-Resistance Vs
Fig 5. Typical On-Resistance Vs
DrainCurrent
GateVoltage
75
65
55
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 7. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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7
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
N-Channel
Die 1
280
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 48V
= 30V
= 12V
I
= 0.89A
DS
DS
DS
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
240
200
160
120
80
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
2
40
FOR TEST CIRCUIT
SEE FIGURE 17
C
rss
0
0
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G,
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
10
1
1.0
0.8
0.6
0.4
0.2
0
T
= 150°C
J
°C
T
=
25
J
0.1
0.01
V
= 0V
GS
0
0.5
1.0
1.5
2.0
2.5
25
50
T
75
100
125
150
V
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-to-Drain Diode
CaseTemperature
ForwardVoltage
8
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
N-Channel
Die 1
48
40
32
24
16
8
10
OPERATION IN THIS AREA LIMITED
BY R (on)
I
D
DS
TOP
0.40A
0.56A
0.89A
µ
100 s
BOTTOM
1
0.1
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.01
0
0.1
1
10
100
25
50
75
100
125
150
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
P
DM
1
t
1
t
2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig15. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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9
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
N-Channel
Die 1
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
.
D.U.T
R
G
+
-
V
DD
I
A
AS
V
2
GS
0.01
Ω
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
4.5V
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
VDS
VGS
V
DS
90%
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
10
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
10
1
10
VGS
-10V
VGS
-10V
TOP
TOP
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
BOTTOM -2..0V
BOTTOM -2..0V
1
-2.0V
0.1
-2.0V
µ
60 s PULSE WIDTH
Tj = 25°C
µ
60 s PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
2.0
1.5
1.0
0.5
10
I
= -0.65A
D
T
= 25°C
J
T
= 150°C
J
1
V
= -25V
DS
0µ
V
= -4.5V
6
s PULSE WIDTH
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
4
4.5
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 22. Normalized On-Resistance
Fig 21. Typical Transfer Characteristics
Vs.Temperature
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11
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
P-Channel
Die 2
4
3.5
3
3.2
I
= -0.65A
D
2.8
2.4
2.0
1.6
1.2
0.8
2.5
T
= 150°C
J
T
= 150°C
J
2
1.5
1
T
= 25°C
J
T
= 25°C
0.5
0
J
Vgs = -4.5V
2
3
4
5
6
7
8
9
10 11 12
0
0.5
1.0
1.5
2.0
2.5
3.0
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 24. Typical On-Resistance Vs
Fig 23. Typical On-Resistance Vs
DrainCurrent
GateVoltage
2.5
80
70
60
50
I
= -1.0mA
D
2.0
1.5
1.0
0.5
0.0
I
= -50µA
D
D
D
D
I
I
I
= -250µA
= -1.0mA
= -150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 25. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 26. Typical Threshold Voltage Vs
Temperature
12
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
240
12
10
8
V
GS
= 0V,
= C
f = 1 MHz
V
V
V
= -48V
= -30V
= -12V
I
= -0.65A
DS
DS
DS
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
= C
200
160
120
80
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
40
2
FOR TEST CIRCUIT
SEE FIGURE 35
C
rss
0
0
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-V , Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 28. Typical Gate Charge Vs.
Fig 27. Typical Capacitance
Gate-to-SourceVoltage
Vs.Drain-to-SourceVoltage
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T
= 150°C
J
1
0.1
°C
T
=
25
J
V
= 0V
GS
0.01
0
0.5
-V
1
1.5
2
2.5
3
3.5
4
4.5 5.0
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 29. Typical Source-Drain Diode
Fig 30. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
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13
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
P-Channel
Die 2
80
70
60
50
40
30
20
10
0
10
OPERATION IN THIS AREA
LIMITED BY R (on)
I
D
DS
TOP
-0.29A
-0.41A
BOTTOM -0.65A
1
0.1
1ms
10ms
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
-V
Starting T , Junction Temperature (°C)
DS
J
Fig 32. Maximum Avalanche Energy
Fig 31. Maximum Safe Operating Area
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
P
DM
1
t
1
t
2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig33. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
14
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
L
V
I
DS
AS
D.U.T
R
.
G
V
DD
I
A
AS
DRIVER
-2V0GVS
0.01
t
Ω
p
t
p
15V
V
(BR)DSS
Fig 34a. Unclamped Inductive Test Circuit
Fig34b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
-4.5V
.2µF
12V
.3µF
-
Q
Q
GD
GS
V
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 35b. Gate Charge Test Circuit
Fig 35a. Basic Gate Charge Waveform
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
10%
VDD
D.U.T.
RG
-
+
VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 36b. Switching Time Waveforms
Fig 36a. Switching Time Test Circuit
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15
IRHLUC7670Z4, 2N7632UC
Footnotes:
Pre-Irradiation
Ä Total Dose Irradiation with V
Bias.
= 0 during
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
±
10 volt V
applied and V
DS
GS
irradiation per MIL-STD-750, method 1019, condition A
Á V
= 25V, starting T = 25°C, L= 50.4mH,
J
DD
Peak I = 0.89A, V
= 10V
Å Total Dose Irradiation with V
Bias.
L
GS
DS
= 0 during
±
48 volt V
applied and V
Â
I
SD
DD
≤ 0.89A, di/dt ≤ 200A/µs,
≤ 60V, T ≤ 150°C
J
DS
irradiation per MlL-STD-750, method 1019, condition A
² V = -25V, starting T = 25°C, L= 161mH,
GS
V
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
DD
Peak I = -0.65A, V
J
= -10V
L
GS
³ I
≤ -0.65A, di/dt ≤ -150A/µs,
SD
V
≤ -60V, T ≤ 150°C
DD
J
Case Outline and Dimensions — LCC-6
± 0.010
0.245
0.080
MAX.
± 0.008
0.090
0.065
0.025
PIN 1
5
6
0.050
± 0.010
0.170
1
4
3
0.100
PIN 1
2
NOTES:
1. OUTLINE CONFORMS TO MIL-PRF-19500/255L
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLINGDIMENSION: INCH.
DIE 1 ( N Ch )
DIE 2 ( P Ch )
PIN NAME
DRAIN
PIN #
PIN NAME
DRAIN
PIN #
- 1
- 2
- 6
- 4
- 5
- 3
GATE
GATE
SOURCE
SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
16
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