30BQ100TR [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 30BQ100TR |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20409 rev. C 01/07
30BQ100PbF
SCHOTTKY RECTIFIER
3 Amp
IF(AV) = 3.0Amp
VR = 100V
Major Ratings and Characteristics
Description/ Features
The 30BQ100PbF surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Characteristics
Values Units
I
Rectangular
waveform
3.0
A
F(AV)
V
I
100
V
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
RRM
@t =5μs sine
800
0.62
A
V
p
FSM
Guard ring for enhanced ruggedness and long term
reliability
V
@3.0Apk, T =125°C
J
F
Lead-Free ("PbF" suffix)
T
range
- 55 to175
°C
J
Case Styles
SMC
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1
30BQ100PbF
Bulletin PD-20409 rev. C 01/07
Voltage Ratings
Part number
30BQ100PbF
VR
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
30BQ Units Conditions
IF(AV) Max. Average Forward Current
3.0
4.0
A
50%duty cycle@TL =148°C, rectangular waveform
50%duty cycle@TL =138°C, rectangular waveform
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current
800
A
5μs Sineor3μsRect. pulse
Following any rated
load condition and
70
3.0
0.5
10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non Repetitive Avalanche Energy
mJ TJ =25°C,IAS =1.0A,L=6mH
IAR
Repetitive Avalanche Current
A
Current decayinglinearlytozeroin1 μsec
Frequencylimited byTJ max. Va=1.5xVr typical
Electrical Specifications
Parameters
30BQ Units Conditions
TJ = 25 °C
VFM Max. Forward Voltage Drop
(1)
0.79
0.90
0.62
0.70
V
V
V
V
@ 3A
@ 6A
@ 3A
@ 6A
TJ = 125 °C
VR = rated VR
IRM Max. Reverse Leakage Current (1)
0.5
5.0
mA TJ = 25 °C
mA TJ = 125 °C
CT
LS
Max. Junction Capacitance
Typical Series Inductance
115
3.0
pF
VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/μs (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
30BQ Units
Conditions
TJ
Max. Junction Temperature Range(*) - 55 to 175 °C
Tstg Max. Storage Temperature Range -55 to175 °C
RthJL Max. Thermal Resistance
Junction to Lead
12
46
°C/W DC operation
°C/W DC operation
(**)
RthJA Max. Thermal Resistance
Junction to Ambient
wt
Approximate Weight
Case Style
0.24(0.008) g (oz.)
SMC
IR3J
Similar to DO-214AB
Device Marking
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
(**) Mounted 1 inch square PCB
2
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30BQ100PbF
Bulletin PD-20409 rev. C 01/07
10
1
10
T
= 175˚C
J
150˚C
125˚C
0.1
100˚C
75˚C
50˚C
0.01
0.001
0.0001
0
25˚C
0
20
40
60
80
100
Reverse Voltage - VR (V)
1
T
T
T
= 175˚C
= 125˚C
J
J
J
Fig. 2-Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
1000
100
10
=
25˚C
T
= 25˚C
J
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
Forward Voltage Drop-VFM (V)
Reverse Voltage - VR (V)
Fig. 1-Max. Forward Voltage Drop
Characteristics (Per Leg)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (PerLeg)
100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
1
P
DM
t
1
t
2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
.
0.1
0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4-Max. Thermal Impedance Z thJC Characteristics (PerLeg)
0.01
0.1
1
10
100
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3
30BQ100PbF
Bulletin PD-20409 rev. C 01/07
2.5
2
180
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
160
1.5
1
RMS Limit
140
DC
Square wave (D = 0.50)
80% Rated Vr applied
120
0.5
0
see note (2)
100
0
1
2
3
4
5
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current-I F(AV) (A)
Average Forward Current- I F(AV) (A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4-Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
SquareWavePulseDuration-Tp(Microsec)
Fig. 6-Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1xIR (1-D); IR @VR1=80%ratedVR
4
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30BQ100PbF
Bulletin PD-20409 rev. C 01/07
Outline Table
Device Marking: IR3J
2.75 (.108)
3.15 (.124)
5.59 (.220)
6.22 (.245)
CATHODE
ANODE
6.60 (.260)
7.11 (.280)
1
2
.152 (.006)
.305 (.012)
2
POLARITY
PART NUMBER
1
2.00 (.079)
2.62 (.103)
.102 (.004)
.203 (.008)
0.76 (.030)
1.52 (.060)
7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR3J
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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5
30BQ100PbF
Bulletin PD-20409 rev. C 01/07
Tape & Reel Information
Dimensions in millimetres and (inches)
30BQ100
********************************************
* SPICE Model Diode
*
********************************************
.SUBCKT 30BQ100 ANO CAT
D1 ANO 1 CAT
*Define diode model
.MODEL DMOD D (IS=100N, N=1.34718, BV=120, RS=40.3878M, CJO=158.574P, VJ=3.61795,
M=526.488M, EG=1.11, XTI=2, RL=25.6436MEG).
******************************************************************************
.ENDS 30BQ100
Thermal Model Subcircuit
.SUBCKT 30BQ100 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
6.42E-01
1.03E+01
1.66E+02
6.78E+03
RTHERM1
RTHERM2
RTHERM1
RTHERM1
5
4
3
2
4
3
2
1
3.34E+00
4.97E+00
2.84E+00
7.75E-01
.ENDS 30BQ100
6
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30BQ100PbF
Bulletin PD-20409 rev. C 01/07
Ordering Information Table
Device Code
30
B
Q
100 TR PbF
1
2
4
5
6
3
1
2
3
4
5
-
-
-
-
-
Current Rating
B
= Single Lead Diode
= Schottky Q Series
Q
Voltage Rating (100 = 100V)
y none= Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
y none= Standard Production
y PbF = Lead-Free
6
-
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/07
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7
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