30CTH02FPPBF [INFINEON]
Hyperfast Rectifier; 超快整流器型号: | 30CTH02FPPBF |
厂家: | Infineon |
描述: | Hyperfast Rectifier |
文件: | 总8页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin PD-20894 rev. B 12/06
30CTH02PbF
30CTH02FPPbF
Hyperfast Rectifier
Features
trr =30ns max.
IF(AV) = 30Amp
VR = 200V
•
•
•
•
•
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
Description/ Applications
International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Max
200
15
Units
VRRM
IF(AV)
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
V
A
@ TC = 159°C Per Diode
@ TC = 125°C (FULLPACK) Per Diode
Per Device
30
200
IFSM
Non Repetitive Peak Surge Current @ TJ = 25°C
TJ, TSTG Operating Junction and Storage Temperatures
- 65 to 175
°C
Case Styles
30CTH02FPPbF
30CTH02PbF
Base
Common
Cathode
2
2
Common
Cathode
2
3
1
1
Common
Cathode
3
Anode
Anode
Anode
Anode
TO-220AB
TO-220 FULLPACK
1
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30CTH02PbF, 30CTH02FPPbF
Bulletin PD-20894 rev. B 12/06
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
Breakdown Voltage,
Blocking Voltage
200
-
-
V
IR = 100μA
VF
Forward Voltage
-
-
-
-
-
-
0.92 1.05
0.78 0.85
V
IF = 15A, TJ = 25°C
V
IF = 15A, TJ = 125°C
IR
Reverse Leakage Current
-
5
10
μA
μA
pF
nH
VR = VR Rated
300
TJ = 125°C, VR = VR Rated
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
57
8
-
-
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)
C
Parameters
Min Typ Max Units Test Conditions
trr
Reverse Recovery Time
-
-
-
-
-
-
35
30
-
ns
IF = 1A, diF/dt = 50A/μs, VR = 30V
IF = 1A, diF/dt = 100A/μs, VR = 30V
TJ = 25°C
-
26
40
2.8
IF = 15A
-
TJ = 125°C
diF/dt = 200A/μs
IRRM
Peak Recovery Current
-
A
TJ = 25°C
VR = 160V
-
-
-
6.0
37
-
-
-
TJ = 125°C
Qrr
Reverse Recovery Charge
nC
TJ = 25°C
120
TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
Max. Storage Temperature Range
-
-
175
°C
TStg
RthJC
- 65
-
175
c
Thermal Resistance,
Junction to Case
Device Marking
Per Diode
-
-
-
1.1
3.5
°C/W
Fullpack (Per Diode)
-
30CTH02
30CTH02FP
Case Style TO-220
Case Style Fullpack
c Mounting Surface, Flat, Smooth and Greased
2
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30CTH02PbF, 30CH02FPPbF
Bulletin PD-20894 rev. B 12/06
100
100
10
1
Tj = 175˚C
150˚C
125˚C
10
1
100˚C
75˚C
0.1
50˚C
25˚C
0.01
0.001
0.0001
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
0
50
100
150
200
Reverse Voltage-VR (V)
Fig.2-Typical Values of Reverse Current
Vs. Reverse Voltage
1000
100
10
T
= 25˚C
J
0
50
100
150
200
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop-VFM (V)
Reverse Voltage-VR (V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
Fig.1-Typical Forward Voltage Drop Characteristics
10
D = 0.50
1
0.1
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
Notes:
Single Pulse
1. Duty factor D = t1/ t2
(Thermal Resistance)
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
t1,Rectangular Pulse Duration (Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics
0.001
0.01
0.1
1
10
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3
30CTH02PbF, 30CTH02FPPbF
Bulletin PD-20894 rev. B 12/06
10
D = 0.50
D = 0.20
1
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
0.1
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.1
t1,Rectangular Pulse Duration (Seconds)
Single Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
1
10
Fig.5-Max. Thermal Impedance ZthJC Characteristics(FULLPACK)
180
170
160
150
140
180
170
160
DC
150
DC
140
130
Square wave (D = 0.50)
Rated Vr applied
Square wave (D = 0.50)
120
110
100
Rated Vr applied
see note (2)
see note (2)
0
5
10
15
20
25
0
5
10
15
20
25
AverageForwardCurrent-I F(AV) (A)
AverageForwardCurrent-I F(AV) (A)
Fig.6-Max. Allowable CaseTemperature
Vs. Average Forward Current
Fig.7-Max. Allowable CaseTemperature
Vs. Average Forward Current(FULLPACK)
25
20
RMS Limit
15
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
10
Pd=ForwardPowerLoss= IF(AV) xVFM @(IF(AV) /D)
(seeFig.8);
PdREV =InversePowerLoss=VR1 xIR (1-D);
5
0
DC
I
R @VR1=ratedVR
0
5
10
15
20
25
Average Forward Current-IF(AV) (A)
Fig. 8-Forward Power Loss Characteristics
4
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30CTH02PbF, 30CH02FPPbF
Bulletin PD-20894 rev. B 12/06
100
1000
IF = 15 A
IF = 15 A
100
V R= 160V
T J = 125˚C
V R = 160V
T J = 125˚C
T J
= 25˚C
T J
= 25˚C
10
100
10
100
1000
1000
di F /dt (A/μs)
Fig.9-TypicalReverseRecovery vs.di F /dt
diF/dt (A/μs)
Fig.10-TypicalStoredCharge vs.diF /dt
Reverse Recovery Circuit
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
diF /dt
dif/dt
ADJUST
D
IRFP250
G
S
Fig. 11- Reverse Recovery Parameter Test Circuit
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5
30CTH02PbF, 30CTH02FPPbF
Bulletin PD-20894 rev. B 12/06
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
I
RRM
RRM
5
di(rec)M/dt
0.75 I
RRM
1
di /dt
F
1. di /dt - Rate of change of current through zero
F
crossing
4. Qrr - Area under curve defined by t
rr
and I
RRM
t
x I
2
rr
RRM
Q
=
2. I
RRM
- Peak reverse recovery current
rr
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
(rec) M
current during t portion of t
rr
rr
crossing point of negative going I to point where
F
b
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. 13 - Reverse Recovery Waveform and Definitions
Outline Table
Conform to JEDEC outline TO-220AB
6
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30CTH02PbF, 30CH02FPPbF
Bulletin PD-20894 rev. B 12/06
Outline Table
2
Common
Cathode
3
1
Anode
Anode
Conforms to JEDEC Outline TO-220 FULLPACK
Dimensions in millimeters and (inches)
Part Marking Information
PART NUMBER
IRXC Assembly Line
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A 30CTH02
LOT CODE 1789
DATE CODE
P = LEAD-FREE
YEAR 1 = 2001
WEEK 19
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
ASSEMBLY
LOT CODE
LINE C
PART NUMBER
IRMX Assembly Line
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A 30CTH02
LOT CODE 1789
DATE CODE
YEAR 1 = 2001
WEEK 19
ASSEMBLED ON WW 19, 2001
ASSEMBLY
LOT CODE
P = LEAD-FREE
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7
30CTH02PbF, 30CTH02FPPbF
Bulletin PD-20894 rev. B 12/06
Marking Information
EXAMPLE: THIS IS A 30CTH02FP
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 2001
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Ordering Information Table
Device Code
30
C
T
H
02 FP PbF
6
7
1
2
3
4
5
1
2
3
4
5
6
-
Current Rating (30 = 30A)
-
-
-
-
-
C
T
= Common Cathode
= TO-220, D2Pak
H
= HyperFast Recovery
Voltage Rating (02 = 200V)
y none = TO-220AB
y FP = TO-220 FULLPACK
7
-
y none = Standard Production
y PbF = Lead-Free
Tube Standard Pack Quantity: 50 pieces
Data and specifications subject to change without notice.
This product has been designed and qualified for AEC Q1O1 Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/06
8
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