30ETH06-1 [INFINEON]
Hyperfast Rectifier; 超快整流器
| 型号： | 30ETH06-1 |
| 厂家： | 
Infineon |
| 描述： | Hyperfast Rectifier |
| 文件： | 总8页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20748 rev. D 08/01
30ETH06
30ETH06S
30ETH06-1
Hyperfast Rectifier
Features
trr = 28ns typ.
IF(AV) = 30Amp
VR = 600V
•
•
•
•
•
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Dual Diode Center Tap
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Peak Repetitive Reverse Voltage
Average Rectifier Forward Current
Max
600
30
Units
V
A
VRRM
IF(AV)
@ TC = 103°C
@ TJ = 25°C
IFSM
Non Repetitive Peak Surge Current
200
TJ, TSTG Operating Junction and Storage Temperatures
- 65 to 175
°C
Case Styles
30ETH06
30ETH06S
30ETH06-1
Base
Cathode
2
Base
Cathode
2
1
3
1
3
1
3
Cathode
Anode
Anode
N/C
N/C
Anode
TO-220AC
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D2PAK
TO-262
1
30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VBR, Vr Breakdown Voltage,
Blocking Voltage
600
-
-
V
IR = 100µA
VF
Forward Voltage
-
-
-
-
-
-
2.0 2.6
V
V
IF = 30A, TJ = 25°C
1.34 1.75
IF = 30A, TJ = 150°C
IR
Reverse Leakage Current
0.3
50
µA
VR = VR Rated
60 500 µA
TJ = 150°C, VR = VR Rated
VR = 600V
CT
LS
Junction Capacitance
Series Inductance
33
-
-
pF
nH
8.0
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
trr
Reverse Recovery Time
-
-
28
31
35
-
ns
IF = 1.0A, diF/dt = 50A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 30A
VR = 200V
diF /dt = 200A/µs
77
-
IRRM
Peak Recovery Current
-
-
-
-
3.5
7.7
65
-
A
-
Qrr
Reverse Recovery Charge
-
nC
345
-
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
- 65
-
175
°C
TStg
- 65
-
0.7
-
175
1.1
70
-
RthJC
RthJA
RthCS
Wt
Per Leg
-
°C/W
!
"
Thermal Resistance, Junction to Ambient Per Leg
Thermal Resistance, Case to Heatsink
Weight
-
-
0.2
2.0
0.07
-
-
-
g
-
-
(oz)
Mounting Torque
6.0
5.0
12
10
Kg-cm
lbf.in
-
!
Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased
2
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
1000
100
10
1000
Tj = 175˚C
150˚C
125˚C
100
10
100˚C
25˚C
1
0.1
0.01
0.001
0.0001
0
100 200 300 400 500 600
Reverse Voltage-VR (V)
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
100
10
T
= 25˚C
J
T
T
T
= 175˚C
= 150˚C
J
J
J
=
25˚C
1
0
0.5
1
1.5
2
2.5
3
3.5
0
100 200 300 400 500 600
Forward Voltage Drop-VFM (V)
Reverse Voltage-VR (V)
Fig.3-Typical Junction Capacitance
Fig.1-Typical Forward Voltage Drop Characteristics
Vs. Reverse Voltage
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1
0.1
P
DM
t
1
t
2
Single Pulse
(Thermal Resistance)
Notes:
0.01
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1,Rectangular Pulse Duration (Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics
3
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
90
80
70
60
50
40
30
20
10
0
180
160
RMS Limit
DC
140
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
120
Square wave (D = 0.50)
Rated Vr applied
100
80
see note (3)
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
Average Forward Current-IF(AV)(A)
Fig.6-Forward Power Loss Characteristics
Average Forward Current - IF(AV)(A)
Fig.5-Max. Allowable CaseTemperature
Vs. Average Forward Current
90
1200
V R= 200V
T J = 125˚C
IF = 30 A
IF = 15 A
T J
= 25˚C
80
70
60
50
40
30
20
10
0
1000
800
600
400
200
0
IF = 30 A
IF = 15 A
V R = 200V
T J = 125˚C
T J
= 25˚C
100
1000
100
1000
di F /dt (A/µs)
diF/dt (A/µs)
Fig.8-TypicalStoredCharge vs.diF /dt
Fig.7-TypicalReverseRecovery vs.di F /dt
(3) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=ratedVR
4
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Reverse Recovery Circuit
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
diF /dt
dif/dt
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
di(rec)M/dt
I
RRM
RRM
5
0.75 I
RRM
1
di /dt
diF /dt
1. di /dt - Rate of change of current through zero
F
4. Qrr - Area under curve defined by t
rr
crossing
and I
RRM
t
x I
2
rr
RRM
Q
=
2. I
- Peak reverse recovery current
rr
RRM
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
(rec) M
current during t portion of t
rr
rr
crossing point of negative going I to point where
F
RRM
b
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
5
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Outline Table
10.54 (0.41)
MAX.
1.32 (0.05)
1.22 (0.05)
3.78 (0.15)
3.54 (0.14)
Base
Cathode
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
2°
1
3
1
3
Cathode
14.09 (0.55)
13.47 (0.53)
Anode
3.96 (0.16)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
1
3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
Conforms to JEDEC Outline TO-220AC
Dimensions in millimeters and (inches)
5.08 (0.20) REF.
Modified JEDEC outline TO-262
Dimensions in millimeters and (inches)
2
1
3
Anode
N/C
NC
6
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Outline Table
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
Base
Cathode
2
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
4.78 (0.19)
0.55 (0.02)
2.61 (0.10)
2.32 (0.09)
8.89 (0.35)
REF.
0.46 (0.02)
1
3
1.40 (0.055)
1.14 (0.045)
3X
N/C
Anode
0.93 (0.37)
0.69 (0.27)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
2X
1
3
4.57 (0.18)
8.89 (0.35)
4.32 (0.17)
17.78 (0.70)
2
0.61 (0.02) MAX.
5.08 (0.20) REF.
3.81 (0.15)
2.08 (0.08)
2X
2.54 (0.10)
2X
Conforms to JEDEC Outline D2PAK
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
30
E
T
H
06 - 1
1
2
3
4
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating (30 = 30A)
E
T
H
= Single Diode
= TO-220, D2Pak
= HyperFast Recovery
Voltage Rating (06 = 600V)
"-1" = TO-262 Option
S
= D2Pak
None = TO-220AC
7
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 08/01
8
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