30SLJQ030 [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器型号: | 30SLJQ030 |
厂家: | Infineon |
描述: | SCHOTTKY RECTIFIER |
文件: | 总4页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 93966
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
30SLJQ030
30 Amp, 30V
Major Ratings and Characteristics
Description/Features
The 30SLJQ030 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
Characteristics
30SLJQ030 Units
IF(AV)
30
A
VRRM
30
V
A
V
power converters. Full
MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
IFSM @ tp = 8.3ms half-sine
150
0.57
V
F
@ 30Apk, TJ =125°C
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
TJ, Tstg Operating and storage -55 to 150
°C
• Surface Mount
• Lightweight
CASE STYLE
CATHODEANODEANODE
IR Case Style SMD-0.5
www.irf.com
1
10/03/00
30SLJQ030
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
30SLJQ030
30
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
30
A
50% duty cycle @ TC = 105°C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
150
A
@ tp = 8.3 ms half-sine
Electrical Specifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
0.58
0.61
0.67
0.51
0.55
0.62
0.41
0.47
0.57
1.0
V
@ 15A
See Fig. 1
V
@ 20A
TJ = -55°C
TJ = 25°C
TJ = 125°C
VR = rated VR
V
@ 30A
V
@ 15A
V
@ 20A
V
@ 30A
V
@ 15A
V
@ 20A
V
@ 30A
IRM
Max. Reverse Leakage Current
mA
mA
mA
TJ = 25°C
TJ = 100°C
TJ = 125°C
See Fig. 2
75
150
CT
Max. Junction Capacitance
Typical Series Inductance
2000
4.8
pF
nH
VR = 5VDC ( 1MHz, 25°C )
Measured from center of cathode pad to center of
anode pad
L S
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
1.6
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size (Typical)
Case Style
1.0
g
115X170
mils
SMD-0.5
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
2
www.irf.com
30SLJQ030
1000
100
10
125°C
100°C
75°C
100
10
1
1
25°C
0.1
0.01
0
10
20
30
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
Tj = 25°C
10000
1000
100
T
= 25°C
J
Tj = -55°C
0.8
0.0
0.2
0.4
0.6
1.0
Forward Voltage Drop - V (V)
F
0
10
20
30
Fig. 1 - Max. Forward Voltage Drop Characteristics
Reverse Voltage -V (V)
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
30SLJQ030
10
1
D = 0.50
0.20
0.10
P
DM
0.05
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
160
30SLJQ030
thJC
R
= 1.6°C/W
140
120
100
80
DC
60
40
20
0
0
10
20
30
40
50
(A)
60
Average Forward Current - I
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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IRITALY:ViaLiguria49, 10071Borgaro, TorinoTel:++390114510111
IRJAPAN: K&HBldg., 2F, 30-4Nishi-Ikebukuro3-Chome, Toshima-Ku, Tokyo171Tel:81(0)339830086
IRSOUTHEASTASIA:1KimSengPromenade,GreatWorldCityWestTower,13-11,Singapore237994Tel:++65 (0)8384630
IRTAIWAN:16Fl. SuiteD. 207, Sec. 2, TunHawSouthRoad, Taipei, 10673 Tel:886-(0)223779936
Data and specifications subject to change without notice. 10/00
4
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