31DQ04PBF [INFINEON]

暂无描述;
31DQ04PBF
型号: 31DQ04PBF
厂家: Infineon    Infineon
描述:

暂无描述

整流二极管 瞄准线 功效
文件: 总5页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin PD-2.304 rev. E 03/03  
31DQ03  
31DQ04  
SCHOTTKY RECTIFIER  
3.3 Amp  
Description/Features  
Major Ratings and Characteristics  
The 31DQ.. axial leaded Schottky rectifier has been opti-  
mized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power sup-  
plies, converters, free-wheeling diodes, and reverse  
battery protection.  
Characteristics  
31DQ..  
Units  
I
Rectangular  
waveform  
3.3  
A
F(AV)  
V
I
30/40  
450  
V
A
Low profile, axial leaded outline  
RRM  
High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
@tp=5µssine  
FSM  
Very low forward voltage drop  
High frequency operation  
V
@3Apk, T =25°C  
J
0.57  
V
F
J
Guard ring for enhanced ruggedness and long term  
reliability  
T
-40to150  
°C  
CASE STYLE AND DIMENSIONS  
Outline C - 16  
Dimensions in millimeters and inches  
1
www.irf.com  
31DQ03, 31DQ04  
Bulletin PD-2.304 rev. E 03/03  
Voltage Ratings  
Part number  
31DQ03  
31DQ04  
VR  
Max. DC Reverse Voltage (V)  
30  
40  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
31DQ.. Units  
Conditions  
IF(AV) Max. Average Forward Current  
*SeeFig. 4  
3.3  
A
50% duty cycle @ TC =73°C, rectangularwaveform  
IFSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent *SeeFig. 6  
450  
90  
5µs Sineor3µsRect. pulse  
10ms Sine or 6ms Rect. pulse  
Following any rated  
load condition and with  
rated VRRM applied  
A
EAS Non-Repetitive Avalanche Energy  
6.0  
1.0  
mJ  
A
TJ = 25°C, IAS =1.0Amps,L=12mH  
IAR  
Repetitive Avalanche Current  
Current decaying linearly to zero in 1 µsec  
FrequencylimitedbyTJ max. VA =1.5xVR typical  
Electrical Specifications  
Parameters  
31DQ.. Units  
Conditions  
VFM Max. Forward Voltage Drop  
0.57  
0.71  
0.51  
V
V
V
@ 3A  
TJ = 25 °C  
* See Fig. 1  
(1)  
@ 6A  
@ 3A  
TJ = 125 °C  
0.62  
V
@ 6A  
IRM Max. Reverse Leakage Current  
1
mA TJ = 25 °C  
mA TJ = 125 °C  
V
R = rated VR  
* See Fig. 2  
(1)  
20  
CT  
LS  
Typical Junction Capacitance  
Typical Series Inductance  
190  
9.0  
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C  
nH Measured lead to lead 5mm from package body  
V/µs (Rated VR)  
dv/dt Max. Voltage Rate of Change  
(1) Pulse Width < 300µs, Duty Cycle <2%  
10000  
Thermal-Mechanical Specifications  
Parameters  
31DQ.. Units  
Conditions  
TJ  
Max. Junction Temperature Range (*) -40 to150  
°C  
°C  
Tstg Max. Storage Temperature Range  
-40 to150  
80  
RthJA Max. Thermal Resistance Junction  
to Ambient  
°C/W DC operation  
Without cooling fins  
RthJL Typical Thermal Resistance Junction  
to Lead  
34  
°C/W Withfin20x20 (0.79x0.79)1.0(0.04)thick.  
Dimensions in millimeters (inches)  
wt  
Approximate Weight  
Case Style  
1.2 (0.042) g(oz.)  
C-16  
(*) dPtot  
dTj  
1
<
thermal runaway condition for a diode on its own heatsink  
Rth(j-a)  
2
www.irf.com  
31DQ03, 31DQ04  
Bulletin PD-2.304 rev. E 03/03  
100  
10  
T
= 150˚C  
125˚C  
100  
10  
1
J
1
0.1  
0.01  
0.001  
25˚C  
0
10  
20  
30  
40  
Reverse Voltage-VR (V)  
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage  
T
= 150˚C  
= 125˚C  
J
T
J
T
= 25˚C  
J
1000  
100  
10  
T
= 25˚C  
J
0.1  
0
0.3  
0.6  
0.9  
1.2  
Forward Voltage Drop-VFM (V)  
Fig. 1-Max. Forward Voltage Drop Characteristics  
0
40  
80  
120  
160  
200  
Reverse Voltage-VR (V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
www.irf.com  
3
31DQ03, 31DQ04  
Bulletin PD-2.304 rev. E 03/03  
150  
120  
90  
2.5  
2
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
DC  
1.5  
1
DC  
RMS Limit  
60  
Square wave (D = 0.50)  
80% Rated V applied  
R
30  
0.5  
0
see note (2)  
0
0
1
2
3
4
5
0
1
2
3
4
5
AverageForwardCurrent-IF(AV) (A)  
AverageForwardCurrent-IF(AV) (A)  
Fig. 4-Max. Allowable LeadTemperature  
Vs. Average Forward Current  
Fig. 5-Forward Power Loss  
Characteristics  
1000  
100  
At Any Rated Load Condition  
And With Rated V  
Following Surge  
Applied  
RRM  
10  
10  
100  
1000  
10000  
Square Wave Pulse Duration - tp (microsec)  
Fig.6-Max. Non-Repetitive Surge Current  
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC  
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);  
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR  
4
www.irf.com  
31DQ03, 31DQ04  
Bulletin PD-2.304 rev. E 03/03  
Ordering Information Table  
Device Code  
31  
D
Q
04 TR  
2
4
5
1
3
1
2
3
4
5
-
-
-
-
-
31 = 3.1A (Axial and small packages - Current is x10)  
D
Q
=
=
DO-41 package  
Schottky Q.. Series  
04 = 40V  
03 = 30V  
04 = Voltage Ratings  
TR = Tape & Reel package (1200 pcs)  
-
= Box package (500 pcs)  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 03/03  
www.irf.com  
5

相关型号:

31DQ04TR

SCHOTTKY RECTIFIER
INFINEON

31DQ04TR

Schottky Rectifier, 3.3 A
VISHAY

31DQ04TR-M3

Schottky Rectifier, 3.3 A
VISHAY

31DQ04TRPBF

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.3A, 40V V(RRM), Silicon, DO-41, PLASTIC, C-16, 2 PIN
VISHAY

31DQ04TRPBF

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.3A, 40V V(RRM), Silicon, DO-41, PLASTIC, C-16, 2 PIN
INFINEON

31DQ05

SCHOTTKY RECTIFIER
INFINEON

31DQ05

Schottky Rectifier, 3.3 A
VISHAY

31DQ05

Schottky Rectifiers
NJSEMI

31DQ05

3.3A Plug-in Schottky diode 60V DO-201 series
SUNMATE

31DQ05-G

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.3A, Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON