35GQ150 [INFINEON]
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES; 肖特基整流器高效系列
| 型号： | 35GQ150 |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94233
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
35GQ150
35 Amp, 150V
Major Ratings and Characteristics
Description/Features
The 35GQ150 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermeticly isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Characteristics
35GQ150 Units
IF(AV)
35
A
V
A
VRRM
100
400
IFSM @ tp = 8.3ms half-sine
V
F
@ 35Apk, TJ =125°C
1.0
V
• Hermetically Sealed
TJ,Tstg Operating and storage -55 to 150
°C
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Lightweight
.12
( .005 )
13.84 ( .545
13.59 ( .535
)
)
-B-
6.60 ( .260
6.32 ( .249
)
)
3.78 ( .149
3.53 ( .139
)
)
1.27
1.02
(
(
.050
.040
)
)
CASE STYLE
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40 ( .685
16.89 ( .665
)
)
13.84
13.59
(
(
.545
.535
)
)
LEGEND
1
2
3
-
-
-
COLL
EMIT
GATE
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14 ( .045
0.89 ( .035
)
)
3X
3.81
(
.150
)
3.81 ( .150
2X
)
.50 ( .020
.25 ( .010
)
)
M
M
C
C
A
M
B
CATHODEANODEANODE
IRCaseStyleTO-254AA
www.irf.com
1
06/19/01
35GQ150
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
35GQ150
150
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
35
A
50% duty cycle @ TC = 100 °C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
400
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
1.12
1.41
1.0
V
@ 35A
TJ=-55°C
TJ = 25°C
TJ = 125°C
See Fig. 1
V
@ 70A
V
@ 35A
1.31
0.9
V
@ 70A
V
@ 35A
1.26
0.011
3.2
V
@ 70A
IRM
Max. Reverse Leakage Current
mA
mA
mA
TJ = 25°C
TJ = 100°C
TJ = 125°C
See Fig. 2
VR = rated VR
14
CT
Max. Junction Capacitance
Typical Series Inductance
1100
7.8
pF
nH
VR = 5VDC ( 1MHz, 25°C )
L S
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
1.1
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size (Typical)
Case Style
9.3
g
150X180
mils
TO-254AA
Pulse Width < 300µs, Duty Cycle < 2%
2
www.irf.com
35GQ150
100
10
125°C
100°C
1
75°C
0.1
100
10
1
0.01
0.001
0.0001
25°C
0
40
80
120
160
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
1000
100
Tj = 125°C
Tj = 25°C
Tj = -55°C
T
= 25°C
J
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V (V)
F
0
40
80
120
160
Reverse Voltage -V (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
www.irf.com
3
35GQ150
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
P
DM
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x
Z
+ T
thJC C
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
160
35GQ150
thJC
R
= 1.1°C/W
140
120
100
80
DC
60
40
20
0
0
10
20
30
40
50
(A)
60
Average Forward Current - I
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/01
4
www.irf.com
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