35SCGQ030PBF [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 30V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN;
| 型号： | 35SCGQ030PBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 30V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN 二极管 功效 局域网 |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94229
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
35SCGQ030
35 Amp, 30V
MajorRatingsandCharacteristics
Description/Features
The 35SCGQ030 center tap Schottky rectifier has been
expressly designed to meet the rigorous requirements of hi-
rel environments. It is packaged in the hermeticly isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to
TX, TXV and S quality levels.
Characteristics
IF(AV)
35SCGQ030 Units
35
30
A
V
A
VRRM (Per Leg)
IFSM @ tp = 8.3ms half-sine
(Per Leg)
150
V
F
@ 17.5Apk, TJ =125°C
(Per Leg)
0.53
V
• Hermetically Sealed
• Center Tap
TJ, Tstg Operating and storage -55 to 150
°C
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Lightweight
.12
( .005 )
13.84 ( .545
13.59 ( .535
)
)
-B-
6.60 ( .260
6.32 ( .249
)
)
3.78 ( .149
3.53 ( .139
-A-
)
)
CASE STYLE
1.27 ( .050
1.02 ( .040
)
)
20.32 ( .800
20.07 ( .790
)
)
17.40 ( .685
16.89 ( .665
)
)
13.84
13.59
(
(
.545
.535
)
)
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14 ( .045
0.89 ( .035
)
)
3X
3.81 ( .150
)
3.81 ( .150
2X
)
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A M B
2
3
1
ANODECOMMONANODE
CATHODE
IRCaseStyleTO-254AA
www.irf.com
1
06/19/01
35SCGQ030
Voltage Ratings
Part number
Max. DC Reverse Voltage (V) (Per Leg)
35SCGQ030
30
VR
VRWM Max. Working Peak Reverse Voltage (V) (Per Leg)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
35
A
50% duty cycle @ TC =108 °C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current (Per Leg)
150
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
0.63
0.80
0.59
0.81
0.53
0.84
0.4
V
@ 17.5A
@ 35A
TJ=-55°C
TJ = 25°C
TJ = 125°C
(Per Leg) See Fig. 1
V
V
@ 17.5A
@ 35A
V
V
@ 17.5A
@ 35A
V
IRM
Max. Reverse Leakage Current
mA
mA
mA
TJ = 25°C
TJ = 100°C
TJ = 125°C
(Per Leg) See Fig. 2
66
VR = rated VR
230
CT
Max. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
2635
7.8
pF
nH
VR = 5VDC ( 1MHz, 25°C )
L S
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
1.25
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case (Per Leg)
°C/W
DCoperation
DCoperation
See Fig. 4
RthJC Max. Thermal Resistance, Junction
to Case (Per Package)
0.63
°C/W
wt
Weight(Typical)
Die Size (Typical)
9.3
g
150X180
mils
Case Style
TO-254AA
Pulse Width < 300µs, Duty Cycle < 2%
2
www.irf.com
35SCGQ030
1000
100
10
125°C
100°C
75°C
100
10
1
1
25°C
0.1
0.01
0
10
20
30
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage (Per Leg)
10000
Tj = 125°C
Tj = 25°C
Tj = -55°C
T
= 25°C
J
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V (V)
F
1000
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
0
10
20
30
Reverse Voltage -V (V)
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
www.irf.com
3
35SCGQ030
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg)
180
35SCGQ030
thJC
160
R
= 0.63°C/W
140
120
100
80
DC
60
40
20
0
0
10
20
30
40
50
(A)
60
Average Forward Current - I
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/01
4
www.irf.com
相关型号：
35SCGQ045PBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 45V V(RRM), Silicon, TO-254AA
INFINEON
©2020 ICPDF网 联系我们和版权申明