40MT120UHA [INFINEON]
UltraFast NPT IGBT; 超快NPT IGBT
| 型号： | 40MT120UHA |
| 厂家： | 
Infineon |
| 描述： | UltraFast NPT IGBT |
| 文件： | 总13页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27194 rev. A 01/06
40MT120UHA
40MT120UHTA
UltraFast NPT IGBT
"HALF-BRIDGE" IGBT MTP
Features
• UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery and Low VF
• Square RBSOA
VCES = 1200V
IC = 80A
• Al2O3 DBC
• Optional SMD Thermistor (NTC)
• Very Low Stray Inductance Design for
High Speed Operation
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal Resis
tance
MMTP
Absolute Maximum Ratings
Parameters
Max
Units
VCES
Collector-to-Emitter Breakdown Voltage
1200
V
I C
Continuous Collector Current
@ TC = 22°C
@ TC = 104°C
80
40
A
I CM
Pulsed Collector Current
160
160
21
I
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
LM
I F
@ TC = 105°C
I
160
FM
VGE
VISOL
PD
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
± 20
2500
463
V
Maximum Power Dissipation (only IGBT)
@ TC = 25°C
@ TC = 100°C
W
185
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1
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
V
VGE = 0V, IC = 250µA
∆V(BR)CES/ Temperature Coeff. of
+1.1
V/°C VGE = 0V, IC = 3mA (25-125°C)
∆TJ
Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage
3.36 3.59
4.53 4.91
3.88 4.10
V
V
VGE = 15V, IC = 40A
VGE = 15V, IC = 80A
VGE = 15V, IC = 40A TJ = 150°C
VGE = 15V, IC = 80A TJ = 150°C
VCE = VGE, IC = 500µA
5.35 5.68
VGE(th)
Gate Threshold Voltage
4
6
∆VGE(th)/ Temperature Coeff. of
-12
mV/°C VCE = VGE, IC = 1mA (25-125°C)
∆TJ
gfe
Threshold Voltage
Transconductance
35
S
µA
VCE = 50V, IC = 40A, PW = 80µs
VGE = 0V, VCE = 1200V, TJ = 25°C
ICES
Zero Gate Voltage Collector Current
250
0.4
0.2
1.0
10
±250 nA
mA VGE = 0V, VCE = 1200V, TJ = 125°C
VGE = 0V, VCE = 1200V, TJ = 150°C
VGE = ± 20V
IGES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
Q
Q
Q
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
399
43
599
65
nC IC = 40A
g
ge
gc
VCC = 600V
VGE = 15V
187
281
E
E
E
1142 1713
1345 2018
2487 3731
µJ VCC = 600V, IC = 40A
VGE = 15V, Rg = 5Ω, L = 200µH
TJ = 25°C, Energy losses include tail
and diode reverse recovery
µJ VCC = 600V, IC = 40A
VGE = 15V, Rg = 5Ω, L = 200µH
TJ = 125°C, Energy losses include tail
and diode reverse recovery
pF VGE = 0V
on
off
tot
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
1598 2397
1618 2427
3216 4824
on
off
tot
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5521 8282
ies
oes
res
380
171
full square
570
257
VCC = 30V
f = 1.0 MHz
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, IC = 160A
VCC = 1000V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area
10
µs TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
2
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40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
Diode Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VFM
Diode Forward Voltage Drop
2.98 3.38
3.90 4.41
V
IC = 40A
IC = 80A
3.08 3.39
4.29 4.72
3.12 3.42
IC = 40A, TJ = 125°C
IC = 80A, TJ = 125°C
IC = 40A, TJ = 150°C
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
574 861 µJ VGE = 15V, Rg = 5Ω, L = 200µH
120 180 ns VCC = 600V, IC = 40A
43
65
A
TJ = 125°C
Thermistor Specifications (40MT120UHTA only)
Parameters
Resistance
Sensitivity index of the thermistor
material
Min Typ Max Units Test Conditions
(1)
R
30
kΩ T0 = 25°C
0
(1) (2)
β
4000
K
T0 = 25°C
T1 = 85°C
R0
R1
(1) T0,T1 are thermistor's temperatures
= exp [β ( T1 1T)]
,
Temperatures in Kelvin
(2)
0
1
Thermal- Mechanical Specifications
Parameters
Operating Junction Temperature Range
Min
- 40
- 40
Typ
Max
150
Units
°C
TJ
TSTG
RthJC
StorageTemperatureRange
125
0.29
Junction-to-Case
Case-to-Sink
IGBT
°C/ W
Diode
Module
0.61
RthCS
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (external shortest distance in air
between two terminals)
Creepage (shortest distance along external
5.5
8
mm
surface of the insulating material between 2 terminals)
T
Wt
Mounting torque to heatsink
Weight
(3)
3 ± 10%
66
Nm
g (oz)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
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3
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
600
500
400
300
200
100
0
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
100
10
1000
100
10
10 µs
100 µs
1
10ms
DC
0.1
0.01
1
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
4
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40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
160
140
120
100
80
160
140
120
100
80
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
160
140
120
100
80
120
100
V
= 18V
GE
-40°C
25°C
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
125°C
80
60
40
20
0
60
40
20
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
0
2
4
6
8
10
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 125°C; tp = 80µs
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5
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
= 80A
= 40A
= 20A
I
I
= 80A
= 40A
= 20A
CE
CE
CE
CE
I
I
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
350
300
250
200
150
100
50
20
18
16
14
12
10
8
I
I
= 80A
= 40A
= 20A
CE
T
T
= 25°C
= 125°C
J
J
CE
I
CE
6
4
2
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 125°C
6
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40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
4800
4200
3600
3000
2400
1800
1200
600
1000
100
10
td
OFF
t
R
E
ON
td
ON
E
OFF
t
F
0
0
20
40
60
80
100
0
20
40
60
80
100
I
(A)
I
(A)
C
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=250µH; VCE= 400V
RG= 5Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=250µH; VCE= 400V
RG= 5Ω; VGE= 15V
6000
5000
4000
3000
2000
1000
10000
1000
100
E
ON
td
OFF
E
OFF
td
t
ON
R
F
t
10
0
10
20
30
(
40
50
60
0
10
20
30
(
40
50
60
R
)
Ω
R
)
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=250µH; VCE= 600V
ICE= 40A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=250µH; VCE= 600V
ICE= 40A; VGE= 15V
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7
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
50
50
40
30
20
10
R
5.0
Ω
G =
40
30
20
10
0
R
10
Ω
G =
R
30
Ω
G =
R
50
Ω
G =
0
10
20
30
(
40
50
60
10
20
30
40
(A)
50
60
70
R
Ω)
I
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 125°C; IF = 40A
TJ = 125°C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
45
40
35
30
25
20
15
10
60A
40A
50
Ω
20A
30
Ω
10
Ω
5.0
Ω
0
200
400
600
800
1000
0
200
400
600
800 1000 1200
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typical Diode QRR
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 600V; VGE= 15V;
VCC= 600V; VGE= 15V;TJ = 125°C
ICE= 40A; TJ = 125°C
8
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40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
10000
1000
100
Cies
Coes
Cres
10
0
20
40
60
(V)
80
100
V
CE
Fig. 21- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
14
12
10
8
600V
6
4
2
0
0
100
Q
200
300
400
500
, Total Gate Charge (nC)
G
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0A; L = 600µH
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9
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τJ
0.01
τC
0.043
0.105
0.123
0.001214
0.044929
1.1977
τJ
τ1
τ
τ2
τ3
τ1
0.001
τ2
τ3
Ci= τi/Ri
Notes:
0.0001
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τJ
τC
τJ
τ1
0.024
0.549
0.00008
0.000098
τ
0.02
τ2
τ1
τ2
0.01
Ci= τi/Ri
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
, Rectangular Pulse Duration (sec)
0.001
0.01
t
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
10
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40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
L
L
80 V
VCC
DUT
DUT
1000V
0
Rg
1K
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
diode clamp /
DUT
L
Driver
D
- 5V
900V
C
DUT /
DUT
VCC
DRIVER
Rg
Fig. CT.4 - Switching Loss Circuit
Fig. CT.3 - S.C. SOA Circuit
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11
40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
Outline Table
Electrical Diagram
Dimensions in millimetres
Note: unused terminals are not assembled in the package
12
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40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
Ordering Information Table
Device Code
40 MT 120
U
H
T
A
4
7
1
2
3
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Current rating
Essential Part Number
Voltage code
Speed/ Type
Circuit Configuration (H = Half Bridge)
Special Option
(40 = 40A)
(120 = 1200V)
(U = Ultra Fast IGBT)
y none = no special option
y T
= Thermistor
7
-
A = Al2O3 DBC Substrate
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/06
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13
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