50MT060ULSTA [INFINEON]
Ultrafast Speed IGBT; 速度超快IGBT
| 型号： | 50MT060ULSTA |
| 厂家： | 
Infineon |
| 描述： | Ultrafast Speed IGBT |
| 文件： | 总10页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27191 02/05
50MT060ULSA
50MT060ULSTA
"LOW SIDE CHOPPER" IGBT MTP
Ultrafast Speed IGBT
Features
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED TM Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMD Thermistor (NTC)
• Al2O3 DBC
VCES = 600V
IC = 100A,
TC = 25°C
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
Max
Units
VCES
IC
Collector-to-Emitter Voltage
Continuos Collector Current
600
100
V
A
@ TC = 25°C
@ TC = 122°C
50
200
200
48
ICM
ILM
Pulsed Collector Current
Peak Switching Current
I F
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
@ TC = 100°C
IFM
VGE
VISOL
PD
200
± 20
2500
445
175
205
83
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power
Dissipation
IGBT
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
W
Diode
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1
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V
VGE = 0V, IC = 250µA
VGE = 15V, IC = 50A
VGE = 15V, IC = 100A
VGE = 15V, IC = 100A, TJ = 150°C
IC = 0.5mA
VCE(on)
Collector-to-Emitter Voltage
1.69 2.31
1.96 2.55
1.88 2.24
6
VGE(th)
BVR
Gate Threshold Voltage
Diode Reverse Breakdown Voltage
Temperature Coeff. of
3
600
IR = 200µA
∆VGE(th)
∆TJ
/
- 13
29
mV/°C VCE = VGE, IC = 500µA
Threshold Voltage
gfe
Forward Transconductance
Collector-to-Emiter Leaking Current
22
S
VCE = 50V, IC = 100A
ICES
0.25 mA VGE = 0V, VCE = 600V
6
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.64 1.82
1.56 1.74
V
IF = 100A, VGE = 0V
IF = 100A, VGE = 0V, TJ = 150°C
Gate-to-Emitter Leakage Current
± 250 nA VGE = ± 20V
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
Q
Q
Q
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
370
64
555
96
nC IC = 100A
g
VCC = 480V
ge
gc
on
off
ts
163
0.7
1.7
2.4
245
1.2
2.6
3.8
VGE = 15V
E
E
E
mJ IC = 50A, VCC = 480V, VGE = 15V,
Rg = 5Ω
Energy losses include tail and diode reverse
recovery
E
on
E
off
E
ts
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
1.1
2.5
3.6
1.7
3.8
5.5
mJ IC = 50A, VCC = 480V, VGE = 15V
Rg = 5Ω, TJ = 125°C
Energy losses include tail and diode reverse
recovery
C
C
C
C
Input Capacitance
9800 14700
VGE = 0V
ies
oes
res
t
Output Capacitance
602
121
118
99
903
182
177
150
9.8
pF VCC = 30V
Reverse Transfer Capacitance
Diode Junction Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
f = 1.0 MHz
Vr = 600V, f = 1.0 MHz
ns VCC = 480V, IC = 50A
trr
Irr
6.5
320
236
A
di/dt = 200A/µs
Qrr
735
nC Rg = 5Ω
di
M/ Diode PeakRate of Fall of Recovery
During tb
A/µs
(rec) dt
2
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Thermistor Specifications (50MT060ULSTA only)
Parameters
Min Typ Max Units Test Conditions
(1)
R
0
Resistance
30
kΩ T0 = 25°C
(1) (2)
β
Sensitivity index of the thermistor
material
4000
K
T0 = 25°C
T1 = 85°C
= exp [β ( T1 1 )]
,
Temperatures in kelvin
R0
R1
(1) T0,T1 are thermistor's temperatures
(2)
T1
0
Thermal- Mechanical Specifications
Parameters
Min
Typ
Max
Units
TJ
Operating Junction Temperature Range
Storage Temperature Range
- 40
- 40
150
125
0.28
°C
TSTG
RthJC
Junction-to-Case
IGBT
°C/ W
Diode
0.6
RthCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
T
Mounting torque to heatsink
Weight
(3)
3 ± 10%
66
Nm
g
Wt
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
100
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
75
50
25
0
Power Dissipation = 92W
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
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3
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
100
1000.0
100.0
10.0
TJ = 150C
T
= 150°C
J
TJ = 25C
10
T
= 25°C
= 50V
J
Vge = 15V
V
CC
380 s Pulse Width
µ
20µs PULSE WIDTH
1.0
1
5.0
5.5
6.0 6.5
0.6
1.0
1.4
1.8
2.2
VCE , Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
120
100
80
60
40
20
0
2
I
= 100A
= 50A
C
I
1.75
1.5
1.25
1
C
I
= 25A
C
20
40
60
80
100
120
140
160
25
50
T
75
100
125
150
T
, Junction Temperature (°C)
J
Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
4
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1
0.1
D = 0.50
0.20
0.10
0.05
0.01
R1
R2
R2
R3
R3
0.01
0.02
Ri (°C/W) τi (sec)
R1
τ
J τJ
τ
τ
Cτ
0.060
0.130
0.100
0.000968
τ
τ
2τ2
3τ3
0.001
0.0001
1E-005
1τ1
Ci= τi/Ri
0.019621
0.051755
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
D = 0.50
0.20
0.10
0.05
0.01
0.02
R1
R1
R2
R2
R3
R3
0.01
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.200
0.296
0.102
0.000993
1τ1
Ci= τi/Ri
τ
τ
2τ2
3τ3
0.038934
0.52648
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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5
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
20.0
16.0
12.0
8.0
14000
V
= 0V, f = 1 MHZ
I
= 100A
GE
C
C
C
C
= C +C , C SHORTED
ies
res
oes
ge
gc ce
V
= 480V
CE
12000
10000
8000
6000
4000
2000
0
= C
gc
= C + C
ce gc
Cies
Coes
4.0
Cres
0.0
0
100
200
300
400
1
10
100
1000
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G,
DS
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
5.0
4.0
3.0
2.0
1.0
0.0
100
10
1
V
V
T
= 480V
= 15V
CC
GE
R
= 5.0Ω
= 15V
G
V
V
GE
CC
E
= 25°C
OFF
J
= 480V
I
= 100A
C
I
I
= 100A
= 50A
C
C
I
= 25A
C
E
ON
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
T , Junction Temperature (°C)
J
R
, Gate Resistance (
)
Ω
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
6
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1000
100
10
12
10
8
V
T
= 20V
GE
R
= 5.0Ω
= 125°C
= 15V
G
= 125°
T
J
J
V
V
GE
= 480V
CC
6
4
2
SAFE OPERATING AREA
1
0
1
10
100
1000
20
40
60
80
100
V
, Collector-to-Emitter Voltage (V)
I
, Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
10
1
T
= 150°C
= 125°C
= 25°C
J
J
J
T
T
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V ( V )
F
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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7
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
40
30
20
10
0
320
V
T
= 480V
R
= 125°C
= 25°C
J
T
280
240
200
160
120
80
J
I
I
I
= 100A
= 50A
= 25A
F
F
F
I
= 100A
F
IF = 50A
IF = 25A
V
T
= 480V
R
= 125°C
J
T
= 25°C
J
40
100
200
300
400
500
600
100
200
300
400
500
600
di / dt - (A / µs)
di / dt - (A / µs)
f
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
2000
10000
1000
100
V
T
= 480V
R
= 125°C
J
I
I
I
= 100A
= 50A
= 25A
F
F
F
T
= 25°C
J
1600
1200
800
400
0
I
= 100A
F
IF = 50A
IF = 25A
V
T
= 480V
R
= 125°C
J
T
= 25°C
J
100
200
300
400
500
600
100
200
300
400
500
600
di / dt - (A / µs)
f
di / dt - (A / µs)
f
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt
8
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Outline Table
CircuitDiagram
Resistance in ohms
Dimensions in millimetres
Note: unused terminals are not assembled in the package
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9
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Ordering Information Table
Device Code
50 MT 060
U
LS
T
A
7
1
2
3
4
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating (50 = 50A)
Essential Part Number
Voltage rating (060 = 600V)
Speed/Type
(U = Ultra Fast IGBT)
Circuit Configuration (LS = Low Side Chopper)
Special Option
! none = no special option
! T
= Thermistor
7
-
A = Al2O3 DBC Substrate
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/05
10
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