50WQ06FTRL [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5.5A, 60V V(RRM), Silicon;
| 型号： | 50WQ06FTRL |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5.5A, 60V V(RRM), Silicon 整流二极管 |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-2.311 rev. A 12/97
50WQ05F
50WQ06F
SCHOTTKY RECTIFIER
5.5 Amp
Major Ratings and Characteristics
Description/Features
The 50WQ..F surface mount Schottky rectifier has been de-
signedforapplicationsrequiringlowforwarddropandsmallfoot
prints on PC board. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Characteristics
50WQ..F Units
I
Rectangular
waveform
5.5
A
F(AV)
PopularD-PAKoutline
V
I
50/60
360
V
A
V
RRM
Small foot print, surface moutable
Lowforwardvoltagedrop
Highfrequencyoperation
@tp=5µssine
FSM
Guard ring for enhanced ruggedness and long term
reliability
V
@5Apk,T =25°C
J
0.70
F
J
T
-40to125
°C
CASESTYLEANDDIMENSIONS
D - PAK Outline (Similar to TO-252AA)
Dimensions in millimeters and inches
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1
50WQ05F, 50WQ05F
PD-2.311 rev. A 12/97
Voltage Ratings
Part number
50WQ05F
50WQ06F
VR
Max. DC Reverse Voltage (V)
50
60
VRWM Max. Working PeakReverse Voltage (V)
Absolute Maximum Ratings
Parameters
50WQ..F Units
Conditions
IF(AV) Max.AverageForwardCurrent
*SeeFig.5
5.5
A
50%dutycycle@TC =89°C,rectangularwaveform
Followinganyrated
loadconditionand
withratedVRRMapplied
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent*SeeFig.7
360
42
5µs Sineor3µsRect.pulse
10msSineor6msRect.pulse
A
Electrical Specifications
Parameters
50WQ..F Units
Conditions
VFM Max. ForwardVoltageDrop
0.70
1.07
0.66
0.80
3
V
V
@
5A
@ 10A
5A
TJ = 25 °C
TJ = 125 °C
* See Fig. 1
(1)
V
@
V
@ 10A
IRM Max.ReverseLeakageCurrent
* See Fig. 2 (1)
mA
mA
pF
nH
TJ = 25 °C
TJ = 125 °C
VR = rated VR
30
CT
LS
Typical Junction Capacitance
Typical Series Inductance
150
5.0
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
50WQ..F Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to125
-40to125
6.0
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W DCoperation
*SeeFig.4
wt
ApproximateWeight
CaseStyle
0.3(0.01) g(oz.)
D-PAK
SimilartoTO-252AA
2
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50WQ05F, 50WQ06F
PD-2.311 rev. A 12/97
100
10
1
10
1
T = 125°C
J
100°C
75°C
50°C
25°C
.1
.01
.001
T = 125°C
J
0
10 20 30 40 50 60
ReverseVoltage - V (V)
R
T = 25°C
J
Fig.2-Typical Values of Reverse Current
Vs. Reverse Voltage
1000
100
10
T =25°C
J
.1
.2 .4 .6 .8
1
1.2 1.4 1.6 1.8
FM
0 5 10 15 20 25 30 35 40 45 50 55 60 65
ForwardVoltage Drop- V (V)
Reverse Voltage - V (V)
R
Fig.1-Maximum Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
10
D= 0.50
D= 0.33
D= 0.25
1
P
D= 0.17
DM
D= 0.08
.1
t
1
t
2
Notes:
1. DutyfactorD= t /t
1 2
SinglePulse
(Thermal Resistance)
2. PeakT =P xZ +T
J DM thJC C
.01
.00001
.0001
.001
.01
.1
1
10
100
t , Rectangular Pulse Duration (Seconds)
1
Fig.4-Maximum Thermal Impedance ZthJC Characteristics
3
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50WQ05F, 50WQ05F
PD-2.311 rev. A 12/97
6
5
4
3
2
1
0
130
D= 0.08
D= 0.17
D= 0.25
D= 0.33
D= 0.50
R
thJC
(DC) = 6.0°C/W
120
110
100
90
DC
RMS Limit
DC
80
0
2
4
6
8
0
2
4
6
8
Average Forward Current - I
F(AV)
(A)
AverageForwardCurrent-I
(A)
F(AV)
Fig.5-MaximumAllowableCaseTemperature
Vs.AverageForwardCurrent
Fig.6-Forward Power Loss Characteristics
1000
100
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
10
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig.7-MaximumNon-RepetitiveSurgeCurrent
4
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