5EQ100 [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 5EQ100 |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -20349C
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
5EQ100
8A, 100V
Description/Features
MajorRatingsandCharacteristics
The 5EQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
LCC-18 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for
typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source controlled
drawings to TX, TXV and S levels.
Characteristics
IF(AV)
5EQ100 Units
8.0
100
250
0.65
A
V
A
VRRM
IFSM @ tp = 8.3ms half-sine
V
F
@ 8.0Apk, TJ =125°C
V
TJ, Tstg Operating and storage -55 to 150
°C
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long
Term Reliability
• Suface Mount
• Lightweight
CaseStyle
PIN LAYOUT
LEGEND
A
C
= ANODE
= CATHODE
NC = NO CONNECTION
Case Outline and Dimensions - LCC-18
www.irf.com
1
05/24/02
5EQ100
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
5EQ100
100
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
8.0
A
50% duty cycle @ TC = 100°C, rectangular waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
250
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
0.8
1.0
0.65
0.7
0.5
15
V
@ 8.0A
TJ = 25°C
@ 16A
See Fig. 1
V
V
@ 8.0A
TJ =1 25°C
@ 16A
V
IRM
Max. Reverse Leakage Current
See Fig. 2
mA
mA
pF
nH
TJ = 25°C
VR = rated VR
TJ = 125°C
CT
LS
Max. Junction Capacitance
Typical Series Inductance
600
4.3
VR = 5VDC ( 1MHz, 25°C )
Measured from center of cathode pad to center of
anodepad
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
6.0
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size
0.42
g
125X125
mils
Case Style
LCC-18
Pulse Width < 300µs, Duty Cycle < 2%
2
www.irf.com
5EQ100
100
10
TJ = 175°C
150°C
125°C
1
75°C
50°C
0.1
0.01
0.001
0.0001
25°C
A
0
20
40
60
80
100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
5EQ100
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/02
4
www.irf.com
相关型号：
5EQ100PBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, LCC-18
INFINEON
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