63CPQ100 [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器型号: | 63CPQ100 |
厂家: | Infineon |
描述: | SCHOTTKY RECTIFIER |
文件: | 总5页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-20728 12/99
63CPQ100
SCHOTTKY RECTIFIER
60 Amp
TO-247AC
Major Ratings and Characteristics
Description/Features
The 63CPQ100 center tap Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietarybarriertechnologyallowsforreliableoperationupto
175° C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse batteryprotection.
Characteristics
63CPQ100 Units
I
Rectangular
waveform
60
A
F(AV)
V
I
100
2200
0.64
V
A
V
RRM
175° C T operation
J
CentertapTO-247package
@tp=5µssine
FSM
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
V
@30Apk,T =125°C
J
(perleg)
F
Lowforwardvoltagedrop
Highfrequencyoperation
Guard ring for enhanced ruggedness and long term
reliability
T
range
-55to175
°C
J
3. 6 5 ( 0 . 14 4)
5. 3 0 ( 0 .2 0 9)
4 .7 0 0.1 8 5)
15 .9 0 ( 0 .6 2 6 )
15 .3 0 ( 0 .6 0 2 )
( 0 .1 3 9 ) D IA .
3 . 5 5
(
2. 5
1.5
(
0 .0 9 8)
0 .0 59 )
(
5. 7 0 ( 0 . 22 5)
5 .3 0 ( 0 .2 0 8)
2 0 . 30 ( 0 .8 00
1 9 . 70 ( 0 .7 75
)
)
BASE
COMMON
CATHODE
5.5 0
( 0 .21 7 )
2
4 . 5 0 ( 0 .1 7 7 )
( 2 P L C S .)
1
2
3
1
2
3
ANODE COMMON
ANODE
2
1 4. 8 0
( 0. 58 3 )
CATHODE
1
4 . 3 0 ( 0 .1 7 0 )
3 . 7 0 ( 0 .1 4 5 )
1 4 .2 0 ( 0 . 55 9 )
2 . 2 0 ( 0 .0 8 7)
A X .
2 . 40 ( 0 .0 9 5 )
A X
1 . 40 ( 0 .0 5 6 )
1 . 00 ( 0 .0 3 9 )
M
M
.
0 .8 0
( 0.0 3 2)
0 . 4 0 ( 0 .2 1 3)
1 0 . 94
( 0 .4 30 )
1 0 . 86 ( 0 .4 27
)
ConformtoJEDECoutlineTO-247AC(TO-3P)
Dimensions in millimeters and inches
www.irf.com
1
63CPQ100
PD-20728 12/99
Voltage Ratings
Part number
63CPQ100
VR
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
63CPQ Units
Conditions
IF(AV) Max.AverageForward (PerLeg)
30
A
50%duty cycle@TC=153°C,rectangular wave form
Current *SeeFig.5
(PerDevice)
60
Following any rated
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent (Per Leg) *SeeFig.7
2200
410
5µs Sineor3µsRect.pulse
load condition and with
A
rated VRRM applied
10msSineor6msRect.pulse
EAS Non-RepetitiveAvalancheEnergy
(PerLeg)
15
mJ TJ = 25°C, IAS = 1Amps,L=30mH
IAR
RepetitiveAvalancheCurrent
(PerLeg)
1
A
Current decaying linearly to zero in 1µsec
Frequency limited by TJ max.VA =1.5xVR typical
Electrical Specifications
Parameters
63CPQ Units
Conditions
VFM Max. ForwardVoltageDrop
(Per Leg) * See Fig. 1
0.77
0.92
0.64
V
V
V
@ 30A
@ 60A
@ 30A
TJ = 25 °C
(1)
TJ = 125 °C
0.76
0.3
V
@ 60A
IRM Max.ReverseLeakageCurrent
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
(Per Leg) * See Fig. 2
(1)
25
VF(TO) ThresholdVoltage
0.38
5.75
1300
7.5
V
TJ = TJ max.
rt
ForwardSlopeResistance
mΩ
CT
LS
Max. Junction Capacitance (PerLeg)
Typical Series Inductance (PerLeg)
pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs
dv/dt Max. Voltage Rate of Change
(RatedVR)
10,000
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
63CPQ Units
Conditions
TJ
Max.JunctionTemperatureRange
-55to175
-55to175
0.8
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase (Per Leg) *SeeFig.4
°C/W DCoperation
RthJC Max.ThermalResistanceJunction
toCase(PerPackage)
0.4
°C/W DCoperation
RthCS TypicalThermalResistance,Case
toHeatsink
0.25
°C/W Mounting surface,smooth and greased
wt
T
ApproximateWeight
MountingTorque
6(0.21)
6(5)
g(oz.)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-247AC(TO-3P) JEDEC
2
www.irf.com
63CPQ100
PD-20728 12/99
1000
100
10
1000
100
10
T
= 175˚C
J
150˚C
125˚C
100˚C
75˚C
50˚C
1
0.1
0.01
0.001
25˚C
0
20
40
60
80
100
T
T
T
= 175˚C
= 125˚C
ReverseVoltage-VR(V)
J
J
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
=
25˚C
10000
1000
100
T
= 25˚C
J
1
0
20
40
60
80
100 120
0
0.3
0.6
0.9
1.2
1.5
Forward Voltage Drop-VFM (V)
ReverseVoltage-VR(V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
Fig.1-Max. Forward Voltage Drop Characteristics
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
Single Pulse
2. Peak T = PDMx Z
+ T
C
(Thermal Resistance)
J
thJC
0.01
0.00001
0.0001
0.001
t1,RectangularPulseDuration(Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics
0.01
0.1
1
10
100
www.irf.com
3
63CPQ100
PD-20728 12/99
180
170
160
150
30
25
20
15
10
5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
DC
RMS Limit
Square wave (D = 0.50)
140
130
120
80% Rated V applied
R
see note (2)
0
0
10
20
30
40
50
0
10
AverageForwardCurrent-IF(AV)(A)
Fig.6-Forward Power Loss Characteristics
20
30
40
50
AverageForwardCurrent-IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
10000
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
1000
100
10
100
1000
10000
SquareWavePulseDuration-tp(microsec)
Fig.7-Max. Non-Repetitive Surge Current
L
HIGH-SPEED
SWITCH
IRFP460
DUT
FREE-WHEEL
Rg = 25 ohm
Vd = 25 Volt
+
DIODE
CURRENT
MONITOR
40HFL40S02
Fig.8-Unclamped Inductive Test Circuit
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
www.irf.com
63CPQ100
PD-20728 12/99
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS:
IR CANADA:
Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR GERMANY:
IR ITALY:
IR FAR EAST:
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
www.irf.com
5
相关型号:
63CPQ100-C
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-247AD, PLASTIC PACKAGE-3
SENSITRON
63CPQ100-S
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-247AD, PLASTIC PACKAGE-3
SENSITRON
63CPQ100G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-247AC, PLASTIC, TO-3P, 3 PIN
INFINEON
63CPQ100GPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-247AC, LEAD FREE, PLASTIC, TO-3P, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明