6CWQ10F [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 6.6A, 100V V(RRM), Silicon, TO-252AA;
| 型号： | 6CWQ10F |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 6.6A, 100V V(RRM), Silicon, TO-252AA 二极管 |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-2.315 rev. A 12/97
6CWQ09F
6CWQ10F
SCHOTTKY RECTIFIER
6.6 Amp
Major Ratings and Characteristics
Description/Features
The 6CWQ..F surface mount, center tap, Schottky rectifier
hasbeendesignedforapplicationsrequiringlowforwarddrop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters, free-
wheeling diodes, battery charging, and reverse battery
protection.
Characteristics
6CWQ..F Units
I
Rectangular
waveform
6.6
A
F(AV)
V
I
90/100
210
V
A
V
PopularD-PAKoutline
RRM
Centertapconfiguration
Small foot print, surface mountable
Lowforwardvoltagedrop
Highfrequencyoperation
@ tp=5µssine
FSM
V
@3Apk,T =25°C
J
(perleg)
0.85
F
J
Guard ring for enhanced ruggedness and long term
reliability
T
-40to125
°C
CASESTYLEANDDIMENSIONS
D - PAK Outline (Similar to TO-252AA)
Dimensions in millimeters and inches
www.irf.com
1
6CWQ09F, 6CWQ10F
PD-2.315 rev. A 12/97
Voltage Ratings
Part number
6CWQ09F
6CWQ10F
VR
Max. DC Reverse Voltage (V)
90
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
6CWQ..F Units
Conditions
IF(AV) Max.AverageForwardCurrent
*SeeFig.5
6.6
A
50%dutycycle@TC =94°C,rectangularwaveform
Followinganyrated
load condition and with
ratedVRRMapplied
IFSM Max.PeakOneCycleNon-Repetitive
210
42
5µs Sineor3µsRect.pulse
10msSineor6msRect.pulse
A
SurgeCurrent (Per Leg) *SeeFig.7
Electrical Specifications
Parameters
6CWQ..F Units
Conditions
VFM Max. ForwardVoltageDrop
0.85
0.97
0.70
V
V
V
@ 3A
TJ = 25 °C
(Per Leg) * See Fig. 1
(1)
@ 6A
@ 3A
TJ = 125 °C
0.79
1
V
@ 6A
IRM
Max.ReverseLeakageCurrent
(Per Leg) * See Fig. 2 (1)
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
3
CT
LS
Typical Junction Capacitance (Per Leg)
Typical Series Inductance (PerLeg)
100
5.0
pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mmfrom package body
dv/dt Max. Voltage Rate of Change
(RatedVR)
10,000
V/ µs
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
6CWQ..F Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to125
-40to125
5.0
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W DCoperation
*SeeFig.4
RthJA Max.ThermalResistanceJunction
toAmbient
80
°C/W DCoperation
PCBoardmounted,printland=20x20mm
SimilartoTO-252AA
wt
ApproximateWeight
CaseStyle
0.3(0.01) g(oz.)
D-PAK
2
www.irf.com
6CWQ09F, 6CWQ10F
PD-2.315 rev. A 12/97
10
10
1
T = 125°C
J
.1
100°C
75°C
50°C
25°C
.01
.001
.0001
0
20
40
60
80 100
T = 125°C
J
ReverseVoltage- V (V)
R
1
T = 25°C
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
100
T = 25°C
J
.1
.4
10
.5
.6
.7
.8
.9
FM
1
1.1
0
20
40
60
80
100
Forward Voltage Drop-V (V)
Reverse Voltage - V (V)
R
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage (PerLeg)
Fig.1-Max. Forward Voltage Drop Characteristics
(PerLeg)
10
D= 0.50
D= 0.33
D= 0.25
1
P
DM
D= 0.17
D= 0.08
t
1
t
2
.1
Notes:
1. DutyfactorD= t /t
1 2
2. PeakT =P xZ +T
SinglePulse
(Thermal Resistance)
J DM thJC C
.01
.00001
.0001
.001
.01
.1
1
10
100
t , Rectangular Pulse Duration(Seconds)
1
Fig.4-Max. Thermal Impedance ZthJC Characteristics (PerLeg)
3
www.irf.com
6CWQ09F, 6CWQ10F
PD-2.315 rev. A 12/97
130
4
3.5
3
D=0.08
D=0.17
D=0.25
D=0.33
D=0.50
R
thJC
(DC) = 5.0°C/W
125
2.5
2
120
DC
DC
115
110
105
1.5
1
RMSLimit
.5
0
0
1
2
3
4
5
0
1
2
3
4
5
AverageForwardCurrent-I
(A)
AverageForwardCurrent-I
(A)
F(AV)
F(AV)
Fig.5-Max. AllowableCaseTemperature
Vs.AverageForwardCurrent(PerLeg)
Fig.6-Forward Power Loss Characteristics
(PerLeg)
1000
100
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
10
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig.7-Max. Non-RepetitiveSurgeCurrent(PerLeg)
4
www.irf.com
相关型号：
6CWQ10FN
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3
SENSITRON
6CWQ10FN-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3
SENSITRON
6CWQ10FN-GT4
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3
SENSITRON
6CWQ10FN-T4
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3.5A, Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3
SENSITRON
©2020 ICPDF网 联系我们和版权申明