75SLQ060SCV [INFINEON]

75A 60V Hi-Rel Schottky Discrete Diode in a SMD-1 package - JANTXV Screening;


型号：	75SLQ060SCV
厂家：	Infineon
描述：	75A 60V Hi-Rel Schottky Discrete Diode in a SMD-1 package - JANTXV Screening
文件：	总4页 (文件大小：49K)
中文：	中文翻译
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PD - 20602A

SCHOTTKYRECTIFIER

HIGH EFFICIENCY SERIES

75SLQ060

75 Amp, 60V

Major Ratings and Characteristics

Description/Features

The 75SLQ060 Schottky rectifier has been expressly

designed to meet the rigorous requirements of hi-rel

environments. It is packaged in the hermetic surface mount

SMD-1 ceramic package. The device's forward voltage drop

and reverse leakage current are optimized for the lowest

power loss and the highest circuit efficiency for typical high

frequency switching power supplies and resonent power

converters. Full MIL-PRF-19500 quality conformance

testing is available on source control drawings to TX, TXV

and S quality levels.

Characteristics

75SLQ060 Units

I_F(AV)

V_RRM

500

0.7

I_FSM@ tp = 8.3ms half-sine

V_F@ 75Apk, T_J=125°C

• Hermetically Sealed

• Low Forward Voltage Drop

• High Frequency Operation

• Guard Ring for Enhanced Ruggedness and Long term

Reliability

T_J,T_stgOperating and storage -55 to 150

°C

• Surface Mount

• Lightweight

CASE STYLE

CATHODEANODEANODE

IR Case Style SMD-1

www.irf.com

07/11/01

75SLQ060

Voltage Ratings

Part number

Max. DC Reverse Voltage (V)

75SLQ060

V_R

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

Limits Units

Conditions

I_F(AV)Max. AverageForwardCurrent

50% duty cycle @ T_C= 70°C, square waveform

See Fig. 5

I_FSMMax. Peak One Cycle Non - Repetitive

Surge Current

500

@ t_p= 8.3 ms half-sine

ElectricalSpecifications

Parameters

Limits Units

Conditions

V_FM

Max. ForwardVoltageDrop

0.78

1.07

0.82

1.13

0.7

@ 75A

T_J=-55°C

T_J= 25°C

T_J= 125°C

See Fig. 1

@ 150A

@ 75A

@ 150A

@ 75A

0.87

1.0

@ 150A

T_J= 25°C

T_J= 100°C

T_J= 125°C

I_RM

Max. Reverse Leakage Current

See Fig. 2

V_R= rated V_R

275

C_T

Max. Junction Capacitance

Typical Series Inductance

2200

5.9

V_R= 5V_DC( 1MHz, 25°C )

L _S

Measured from center of cathode pad to center of

anode pad

Thermal-MechanicalSpecifications

Parameters

Limits Units

Conditions

T_J

Max.JunctionTemperatureRange

-55 to 150

1.1

°C

T_stg

Max.StorageTemperatureRange

°C

R_thJCMax. Thermal Resistance, Junction

to Case

°C/W

DCoperation

See Fig. 4

Weight(Typical)

Die Size (Typical)

Case Style

2.6

200X200

mils

SMD-1

Pulse Width < 300µs, Duty Cycle < 2%

Pins 2 and 3 externally tied together

www.irf.com

75SLQ060

1000

100

125°C

100°C

75°C

1000

100

25°C

0.1

0.01

Reverse Voltage - V (V)

Fig. 2 - Typical Values of Reverse Current

Vs. Reverse Voltage

Tj = 125°C

Tj = 25°C

Tj = -55°C

10000

1000

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Forward Voltage Drop - V (V)

= 25°C

Fig. 1 - Max. Forward Voltage Drop Characteristics

Reverse Voltage -V (V)

Fig. 3 - Typical Junction Capacitance Vs.

Reverse Voltage

www.irf.com

75SLQ060

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

/ t

1 2

2. Peak T = P

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig. 4 - Max. Thermal Impedance Z_thJCCharacteristics

180

160

75SLQ060

thJC

= 1.1°C/W

140

120

100

(A)

120

Average Forward Current - I

F(AV)

Fig. 5 - Max. Allowable Case Temperature Vs.

Average Forward Current

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 07/01

www.irf.com

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