80EPF10 [INFINEON]
FAST SOFT RECOVERY RECTIFIER DIODE; 快速软恢复整流二极管
| 型号： | 80EPF10 |
| 厂家： | 
Infineon |
| 描述： | FAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总7页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2131 rev. B 10/01
QUIETIR Series
80EPF.. HV
FAST SOFT RECOVERY
RECTIFIER DIODE
VF < 1.2 V @ 40A
trr = 90 ns
VRRM 1000 to 1200V
Description/Features
The 80EPF.. fast soft recovery QUIETIR rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
80EPF.. Units
I
Sinusoidal waveform
80
1000to1200
1100
A
V
F(AV)
V
I
RRM
A
FSM
V
@40A,T =25°C
J
1.2
V
F
trr
@1A,-100A/µs
90
ns
°C
TO-247AC
T
-40to150
J
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1
80EPF.. HV QUIETIR Series
Bulletin I2131 rev. B 10/01
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
80EPF10
80EPF12
1000
1200
1100
1300
12
Absolute Maximum Ratings
Parameters
IF(AV) Max.AverageForwardCurrent
80EPF..
80
Units
A
Conditions
@TC =92°C,180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
1100
1250
5000
7000
70000
10msSinepulse,ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
A
I2t
Max.I2tforfusing
A2s
I2√t Max.I2√tforfusing
A2√s
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
80EPF..
1.35
Units
V
Conditions
@ 80A, TJ = 25°C
rt
Forward slope resistance
4.03
0.87
0.1
mΩ
TJ = 150°C
VF(TO) Threshold voltage
V
IRM Max. Reverse Leakage Current
TJ = 25 °C
mA
VR = rated VRRM
12
TJ = 150 °C
Recovery Characteristics
Parameters
80EPF.. Units
Conditions
IF @ 80Apk
@ 25A/ µs
trr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
480
7.1
2.1
0.5
ns
Irr
A
Qrr
S
µC
@ 25°C
2
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80EPF.. HV QUIETIR Series
Bulletin I2131 rev. B 10/01
Thermal-Mechanical Specifications
Parameters
80EPF.. Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
0.35
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
RthJA Max.ThermalResistanceJunction
toAmbient
RthCS TypicalThermalResistance,Caseto
Heatsink
wt
T
°C/W
DCoperation
40
°C/W
°C/W
g(oz.)
0.2
Mountingsurface,smoothandgreased
ApproximateWeight
MountingTorque
6(0.21)
6(5)
12(10)
Min.
Kg-cm
(Ibf-in)
Max.
CaseStyle
TO-247AC
JEDEC
150
150
80EPF.. Series
80EPF.. Series
R
(DC) = 0.35 C/W
R
(DC) = 0.35 C/W
thJC
thJC
140
130
120
110
100
90
140
130
120
110
100
90
Conduction Angle
Conduction Period
30
30
60
60
40
90
90
120
120
180
180
DC
80
80
0
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
0
20
60
80
100 120 140
Average Forward Current (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
200
175
150
125
100
75
140
120
100
80
180
120
90
60
30
DC
180
120
90
60
30
RM S Lim it
RMS Lim it
60
Conduction Angle
80EPF.. Series
Conduction Period
40
50
80EPF.. Series
T
= 150 C
20
J
25
T
= 150 C
J
0
0
0
20
40
60
80
100 120 140
0
10 20 30 40 50 60 70 80 90
Average Forw ard Current (A)
Average Forw ard Current (A)
Fig.3-ForwardPowerLossCharacteristics
Fig.4-ForwardPowerLossCharacteristics
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80EPF.. HV QUIETIR Series
Bulletin I2131 rev. B 10/01
1200
1300
1200
1100
1000
900
At Any Rated Load Condition And W ith
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Rated V
Applied Following Surge.
RRM
1100
1000
900
800
700
600
500
400
300
Initial T = 150
C
Initial T = 150
C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V Reapplied
RRM
800
700
600
500
80EPF.. Series
400
80EPF.. Series
300
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5-MaximumNon-RepetitiveSurgeCurrent
Fig.6-MaximumNon-RepetitiveSurgeCurrent
1000
100
10
T
T
= 25 C
J
J
= 150
C
80EPF.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forw ard V olta ge (V)
Fig.7-ForwardVoltageDropCharacteristics
800
700
600
500
400
300
200
100
0
1800
80EPF.. Series
Tj = 25 ˚C
80EPF.. Series
Tj = 150 ˚C
1600
1400
1200
1000
800
600
400
200
0
Ifm = 80 A
40 A
20 A
10 A
Ifm = 80 A
40 A
20 A
1 A
10 A
1 A
0
40
RateofFallOfForwardCurrent-di/dt(A/µs)
Fig.8-RecoveryTimeCharacteristics,TJ =25°C
80
120
160
200
0
40
80
120
160
200
RateofFallOfForwardCurrent-di/dt(A/µs)
Fig.9-RecoveryTimeCharacteristics,TJ =150°C
4
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80EPF.. HV QUIETIR Series
Bulletin I2131 rev. B 10/01
12000
10000
8000
6000
4000
2000
0
25000
80EPF.. Series
Tj = 25 ˚C
80EPF.. Series
Tj = 150 ˚C
Ifm = 80 A
Ifm = 80 A
20000
15000
10000
5000
0
40 A
40 A
20 A
10 A
20 A
10 A
1 A
1 A
0
40
80
120
160
200
0
40
80
120
160
200
RateofFallOfForwardCurrent-di/dt(A/µs)
RateofFallOfForwardCurrent-di/dt(A/µs)
Fig.10-RecoveryChargeCharacteristics,TJ =25°C
Fig.11-RecoveryChargeCharacteristics,TJ =150°C
60
45
80EPF.. Series
80EPF.. Series
I
= 80 A
40 A
I
= 80 A
FM
FM
40
35
30
25
20
15
10
5
T
= 150 C
T
= 25 C
J
J
50
40
30
20
10
0
40 A
20 A
20 A
10 A
10 A
1 A
1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
Rate Of Fall Of Forw ard Current - di/dt (A/ s)
Rate Of Fall Of Forw ard Current - di/dt (A/ s)
Fig.12-RecoveryCurrentCharacteristics,TJ =25°C
Fig.13-RecoveryCurrentCharacteristics,TJ =150°C
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
80EPF.. Series
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig.14-ThermalImpedanceZthJC Characteristics
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80EPF.. HV QUIETIR Series
Bulletin I2131 rev. B 10/01
Outline Table
3. 65 (0 .14 4)
3. 55 (0 .13 9)
5. 30 (0 .209)
4.70 ( 0.185)
DIA.
15.90 (0 .626)
15.30 (0 .602)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0.22 5)
5.30 ( 0.208)
20.30 (0 .800)
19.70 (0 .775)
5.50 ( 0.217)
4. 50 (0 .177)
(2 PLCS.)
1
2
3
14. 80 ( 0.583)
14.20 (0 .559)
4. 30 (0 .170)
3. 70 (0 .145)
2. 20 (0 .08 7)
M AX.
2. 40 (0 .09 5)
M AX.
1. 40 (0 .056)
1. 00 (0 .039)
0.80 ( 0.032)
0. 40 (0 .213)
10. 94 ( 0.430)
10 .86 (0.427 )
Dimensionsinmillimetersandinches
Ordering Information Table
Device Code
80
E
P
F
12
Base Cathode
2
2
4
5
1
3
1
2
-
-
Current Rating
Circuit Configuration:
E = Single Diode
Package:
P = TO-247AC
Type of Silicon:
F = Fast Recovery
Anode
Anode
1
3
3
4
-
-
-
10 = 1000V
12 = 1200V
5
6
Voltage code: Code x 100 = V
RRM
6
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80EPF.. HV QUIETIR Series
Bulletin I2131 rev. B 10/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/01
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