80RIA120M [INFINEON]
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC;
| 型号： | 80RIA120M |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC 栅 栅极 |
| 文件： | 总8页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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201
80RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
80A
Features
All diffused design
Glass-metal seal up to 1200V
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A or ISO M12x1.75
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
80RIA
Unit
80
85
A
°C
@ TC
IT(RMS)
ITSM
125
1900
1990
18
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
A
A
I2t
KA2s
KA2s
16
V
DRM/VRRM
400 to 1200
110
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 125
°C
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80
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = 125°C
mA
Type number
80RIA
peak and off-state voltage
repetitive peak voltage
V
V
40
80
400
500
800
900
15
120
1200
1300
12
On-state Conduction
Parameter
80RIA
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
80
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
125
1900
1990
1600
1675
18
A
DC @ 75°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
16
KA2s
12.7
11.7
180.5
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0.99
1.13
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
2222222222222
rt1
Low level value of on-state
slope resistance
2.29
1.84
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.60
150
400
V
I = 250A, TJ = 25°C t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
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80Rs
Index
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics
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Fig. 4 - On-state Power Loss Characteristics
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ies
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Voltage Drop Characteristics
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Fig. 8 - Thermal Impedance ZthJC Characteristics
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80Rs
Index
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Fig. 9 - Gate Characteristics
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es
Switching
Parameter
80RIA
300
Units
Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T = 125°C, V = rated VDRM, ITM = 2xdi/dt snubber
d
J
A/µs 0.2µF, 15Ω, Gate pulse: 20V, 65Ω, t = 6µs, t = 0.5µs
p
r
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, t = 6µs, t = 0.1µs,
p
r
t
Typical delay time
1
d
V = rated VDRM, I = 50Adc, TJ = 25°C.
d
TM
µs
I
TM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,
t
Typical turn-off time
110
dv/dt = 20V/µs, Gate bias: 0V 25Ω, t = 500µs
q
p
Blocking
Parameter
80RIA
500
Units
Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = 125°C exponential to 67% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
15
mA
TJ = 125°C rated VDRM/VRRM applied
23
Triggering
Parameter
80RIA
Units
Conditions
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
12
3
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
10
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
270
120
60
TJ = - 40°C
TJ = 25°C
mA
Max. required gate trigger/ cur-
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
VGT
Max. DC gate voltage required
to trigger
3.5
2.5
1.5
6
V
mA
V
IGD
DC gate current not to trigger
DC gate voltage not to trigger
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
VGD
0.25
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80RSes
Thermal and Mechanical Specification
Parameter
80RIA
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJC Max. thermal resistance,
0.30
0.1
DC operation
K/W
junction to case
RthCS Max. thermal resistance,
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
15.5 (137)
14 (120)
130
Non lubricated threads
Lubricated threads
Nm
(lbf-in)
wt
Approximate weight
Case style
g
TO-209AC(TO-94)
See Outline Table
12
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.042
0.050
0.064
0.095
0.164
0.030
0.052
0.070
0.100
0.165
K/W
60°
30°
Ordering Information Table
Device Code
8
0
RIA 120 M
1
2
3
4
5
2222222222222
1
2
-
-
ITAV x 10A
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
RIA = Essential part number
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
None = Stud base 1/2 "20UNF - 2A threads
M
= Stud base metric threads M12 x 1.75 E 6
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es
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.3) DIA.
.
2.5 (0.10) MAX.
N
I
M
)
7
4.3 (0.17) DIA.
3
.
0
(
.
5
N
.
I
9
M
)
9
FLEXIBLE LEAD
C.S. 16mm
7
.
0
(
0
2
2
(.025 s.i.)
2
RED SILICON RUBBER
C.S. 0.4 mm
(.0006 s.i.)
Fast-on Terminals
AMP. 280000-1
REF-250
RED CATHODE
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
23.5 (0.92) MAX. DIA.
SW 27
1/2"-20UNF-2A *
29.5 (1.16) MAX.
23
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M12 x 1.75 E 6
GLASS-METAL SEAL
FLAG TERMINALS
23.5 DIA.
5.5 (0.22) DIA.
(0.93) MAX.
1.5 (0.06) DIA.
5.6 (0.22)
1/2"-20UNF-2A *
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
2.4 (0.09)
29.5 (1.16)
* FOR METRIC DEVICE: M12 x 1.75 E 6
To Order
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