82RIA80 [INFINEON]
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD;
| 型号： | 82RIA80 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD 栅 栅极 |
| 文件： | 总8页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25201
80RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
80A
Features
All diffused design
Glass-metal seal up to 1200V
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A or ISO M12x1.75
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
80RIA
80
Unit
A
@ TC
85
°C
IT(RMS)
ITSM
125
1900
1990
18
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
A
A
I2t
KA2s
KA2s
16
VDRM/VRRM
400 to 1200
110
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 125
°C
1
80RIA Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = 125°C
mA
Type number
80RIA
peak and off-state voltage
repetitive peak voltage
V
V
40
80
400
500
800
900
15
120
1200
1300
12
On-state Conduction
Parameter
80RIA
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
80
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
125
1900
1990
1600
1675
18
A
DC @ 75°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
16
KA2s
12.7
11.7
180.5
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0.99
1.13
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
2222222222222
rt1
Low level value of on-state
slope resistance
2.29
1.84
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.60
150
400
V
I = 250A, TJ = 25°C t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
2
80RIA Series
Switching
Parameter
80RIA
300
Units
Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T = 125°C, V = rated VDRM, ITM = 2xdi/dt snubber
d
J
A/µs 0.2µF, 15Ω, Gate pulse: 20V, 65Ω, t = 6µs, t = 0.5µs
p
r
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, t = 6µs, t = 0.1µs,
p
r
t
Typical delay time
1
d
V = rated VDRM, I = 50Adc, TJ = 25°C.
d
TM
µs
ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,
t
Typical turn-off time
110
dv/dt = 20V/µs, Gate bias: 0V 25Ω, t = 500µs
q
p
Blocking
Parameter
80RIA
500
Units
Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = 125°C exponential to 67% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
15
mA
TJ = 125°C rated VDRM/VRRM applied
23
Triggering
Parameter
80RIA
Units
Conditions
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
12
3
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
10
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
270
120
60
TJ = - 40°C
TJ = 25°C
mA
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
VGT
Max. DC gate voltage required
to trigger
3.5
2.5
1.5
6
V
mA
V
IGD
DC gate current not to trigger
DC gate voltage not to trigger
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
VGD
0.25
3
80RIA Series
Thermal and Mechanical Specification
Parameter
80RIA
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJC Max. thermal resistance,
0.30
0.1
DC operation
K/W
junction to case
RthCS Max. thermal resistance,
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
15.5 (137)
14 (120)
130
Non lubricated threads
Lubricated threads
Nm
(lbf-in)
wt
Approximate weight
Case style
g
TO-209AC(TO-94)
See Outline Table
12
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.042
0.050
0.064
0.095
0.164
0.030
0.052
0.070
0.100
0.165
K/W
60°
30°
Ordering Information Table
Device Code
8
0
RIA 120 M
1
2
3
4
5
2222222222222
1
2
-
-
ITAV x 10A
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
RIA = Essential part number
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
None = Stud base 1/2 "20UNF - 2A threads
M
= Stud base metric threads M12 x 1.75 E 6
4
80RIA Series
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.3) DIA.
2.5 (0.10) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
23.5 (0.92) MAX. DIA.
SW 27
1/2"-20UNF-2A *
29.5 (1.16) MAX.
23
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M12 x 1.75 E 6
GLASS-METAL SEAL
FLAG TERMINALS
23.5 DIA.
5.5 (0.22) DIA.
(0.93) MAX.
1.5 (0.06) DIA.
5.6 (0.22)
1/2"-20UNF-2A *
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
2.4 (0.09)
29.5 (1.16)
* FOR METRIC DEVICE: M12 x 1.75 E 6
5
80RIA Series
130
130
120
110
100
90
80RIA Series
(DC) = 0.30 K/W
80RIA Series
(DC) = 0.30 K/W
R
R
thJC
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
30°
120°
60°
90°
180°
80
120°
DC
180°
80
70
0
10 20 30 40 50 60 70 80 90
0
20
40
60
80 100 120 140
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
120
180°
120°
90°
60°
30°
110
100
90
80
70
60
50
40
30
20
10
0
RMS Limit
Conduction Angle
80RIA Series
T = 125°C
J
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
60
40
80RIA Series
20
T
= 125°C
J
0
0
20
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
40
60
80 100 120 140
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
6
80RIA Series
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
80RIA Series
80RIA Series
800
700
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1000
100
T = 25°C
J
T = 125°C
J
10
1
80RIA Series
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.30 K/W
R
thJC
(DC Operation)
0.01
0.001
80RIA Series
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
7
80RIA Series
100
Rectangular gate pulse
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms
tr<=1 µs
10
1
(1) (2)
(4)
(3)
(a)
(b)
VGD
Frequency Limited by PG(AV)
10 100 1000
IGD
0.01
Device: 80RIA Series
0.1
0.1
0.001
1
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
8
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