85EPS [INFINEON]
INPUT RECTIFIER DIODE; 输入整流二极管
| 型号： | 85EPS |
| 厂家： | 
Infineon |
| 描述： | INPUT RECTIFIER DIODE |
| 文件： | 总6页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2139 rev. C 10/02
SAFEIR Series
85EPS..
INPUT RECTIFIER DIODE
IF(RMS) = 160A
VF
< 1.15V @ 85A
IFSM = 1400A
VRRM 800 and 1200V
Description/ Features
Major Ratings and Characteristics
The 85EPS.. rectifier SAFEIR series has been
Characteristics
85EPS.. Units
optimized for very low forward voltage drop, with
moderateleakage.
I
Sinewaveform
@TC= 95°C
F(AV)
85
160
A
The glass passivation technology used has reliable
operation up to 150° C junction temperature.
Available in the new PowIRtabTM package, this new
series is suitable for a large range of applications
combiningexcellentdietofootprintratioandsturdeness
connectivity for use in high current environments.
I
A
F(RMS)
V
range (*)
800 and 1200
V
RRM
I
1400
1.15
A
V
FSM
V
@85A,T =25°C
J
F
T
range
-40 to150
°C
J
Case Styles
85EPS..
85EPS..J
(*) for higher voltage up to 1600V contact factory
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1
85EPS.. SAFEIR Series
Bulletin I2139 rev. C 10/02
Voltage Ratings
VRRM , maximum
peakreversevoltage
V
VRSM, maximum non repetitive
IRRM
150°C
mA
Part Number
peakreversevoltage
V
85EPS08
85EPS12
800
900
3
1200
1300
Absolute Maximum Ratings
Parameters
85EPS..
85
Units
A
Conditions
IF(AV) Max.AverageForwardCurrent
IF(RMS) Max.RMSForwardCurrent
@TC=95°C,180°conductionhalfsinewave
160
A
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
1400
1500
10msSinepulse,ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
A
I2t
Max.I2tforfusing
10500
A2s
9550
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
I2√t Max.I2√tforfusing
105000
A2√s
Electrical Specifications
Parameters
85EPS..
1.15
3.17
0.86
0.1
Units
V
Conditions
VFM Max. ForwardVoltageDrop
@ 85A, TJ = 25°C
rt
VF(TO) Thresholdvoltage
IRM Max.ReverseLeakageCurrent
Forwardsloperesistance
mΩ
V
TJ = 150°C
TJ = 25 °C
mA
VR = rated VRRM
3.0
TJ = 150 °C
Conditions
DCoperation
Thermal-Mechanical Specifications
Parameters
85EPS.. Units
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
0.35
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W
RthJA Max.ThermalResistanceJunction
toAmbient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance,Caseto
Heatsink
0.2
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
PowIRtabTM
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2
85EPS.. SAFEIR Series
Bulletin I2139 rev. C 10/02
150
140
130
120
110
100
90
150
85EPS.. Se rie s
85EPS.. Se rie s
(DC ) = 0.35 °C /W
R
(DC) = 0.35 °C/ W
R
140
130
120
110
100
90
thJC
thJC
C o nd uc tio n Pe rio d
C o nd uc tio n Angle
90°
60° 120°
30°
60°
90°
120°
180°
80
80
30°
40
180°
DC
70
70
0
20
40
60
80
100
0
20
60
80 100 120 140
Ave ra g e Forwa rd Curre nt (A)
Ave ra g e Fo rwa rd Curre nt (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
60
Cond uc tion Ang le
85EPS.. Se rie s
Cond uc tio n Pe riod
85EPS.. Se rie s
60
40
40
T = 150°C
20
J
T = 150°C
20
J
0
0
0
20
40
60
80 100 120 140
0
20
40
60
80
100
Ave ra g e Forwa rd Curre nt (A)
Ave ra g e Forw a rd Curre nt (A)
Fig.3-ForwardPowerLossCharacteristics
Fig.4-ForwardPowerLossCharacteristics
1000
100
10
1
T = 25°C
J
T = 150°C
J
85EPS.. Se rie s
0
0.5
1
1.5
2
2.5
3
3.5
4
Insta nta ne o us Forwa rd Volta g e (V)
Fig.5-ForwardVoltageDropCharacteristics
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3
85EPS.. SAFEIR Series
Bulletin I2139 rev. C 10/02
1600
1700
1600
1500
1400
1300
1200
1100
1000
900
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n.
At Any Ra te d Lo a d Cond ition And With
Ra te d V
Ap p lie d Fo llo wing Surg e .
RRM
1500
1400
1300
1200
1100
1000
900
Initia l T = 150°C
Initia l T = 150°C
J
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
85EPS.. Se rie s
85EPS.. Se rie s
800
0.01
1
10
100
0.1
Pulse Tra in Dura tio n (s)
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre nt Pu lse s (N)
Fig.7-MaximumNon-RepetitiveSurgeCurrent
Fig.6-MaximumNon-RepetitiveSurgeCurrent
1
Ste a dy Sta te Va lue
(DC Op e ra tion)
D = 0.50
D = 0.33
0.1
D = 0.25
D = 0.17
D = 0.08
85EPS.. Se rie s
Sing le Pulse
0.01
0.0001
0.001
0.01
Sq ua re Wa ve Pulse Dura tion (s)
Fig.8-ThermalImpedanceZthJCCharacteristics
0.1
1
10
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4
85EPS.. SAFEIR Series
Bulletin I2139 rev. C 10/02
Outline Table
CaseStyle PowIRtabTM
Dimensions in millimeters and (inches)
CaseStyle PowIRtabTM"J"version
Dimensions in millimeters and (inches)
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5
85EPS.. SAFEIR Series
Bulletin I2139 rev. C 10/02
Ordering Information Table
Device Code
BaseCathode
2
85
E
P
S
12
J
1
2
3
4
5
6
1
2
-
-
CurrentRating
1
3
CircuitConfiguration:
E = Single Diode
Package:
Anode
Anode
3
4
-
-
P = PowIRtabTM
Type of Silicon:
S = Standard Recovery Rectifier
08 = 800V
12 = 1200V
5
6
6
-
-
Voltage code: Code x 100 = V
(*)
RRM
none=PowIRtabTMstandard
= ShortLeadVersion
J
(*) for higher voltage up to 1600V contact factory
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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6
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