8AF05NLV [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, B-47, 1 PIN;
| 型号： | 8AF05NLV |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, B-47, 1 PIN 二极管 |
| 文件： | 总5页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I20262 05/96
8AFSERIES
PRESSFITRECTIFIERDIODES
50 A
Features and Descriptions
Convenient pressfit package
Available with and without leads
High surge capabilities
Fully characterised bulletin
Major Ratings and Characteristics
Parameters
I F(AV)
8AF
50
Units
A
@ TC
150
79
°C
A
IF(RMS)
IFSM
@50Hz
714
A
@60Hz
@50Hz
@60Hz
747
A
2
2
I t
2546
2324
25455
A s
2
A s
2
2
I √t
A √s
V
RRM range
50to400
V
IR Case Style B-47
TJ
-65to195
oC
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1
8AF Series
Bulletin I20262 05/96
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRMmax.
Typenumber
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max
mA
05
1
50
75
7
7
5
5
100
200
400
150
300
500
8AF
2
4
Forward Conduction
Parameter
8AF
Units Conditions
IF(AV)
Maximum average forward current
@ Case temperature
IF(RMS) Maximum RMS forward current
50
150
79
A
°C
A
180° conduction, half sine wave
IFSM
Maximum peak, one-cycle forward,
non-repetitive surge current
714
747
600
628
2546
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
A2s
t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
2324
1800
1643
25455
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage
VF(TO)2 High level value of threshold voltage
0.60
0.68
6.66
V
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
r
r
Low level value of forward slope resistance
mΩ (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
f1
High level value of forward slope resistance
Maximum forward voltage drop
6.25
1.45
f2
VFM
V
TJ = 25°C, IFM = π x rated IF(AV)
Thermal and Mechanical Specifications
Parameter
8AF
Units Conditions
TJ
Max. junction operating temperature range
Storage temperature range
- 65 to 195
- 65 to 195
°C
T
stg
RthJC Max. thermal resistance, junction to case
RthCS Typical thermal resistance, case to heatsink
0.60
0.50
K/W DC operation
As per mounting details
wt
Approximate weight
Case style
10 (0.36)
g (oz)
B-47
See outline table
MOUNTING: A 12.6 ± 0.02mm (0.496 to 0.497 inch) diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038mm (0.015
inch) x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.
2
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8AF Series
Bulletin I20262 05/96
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.042
0.045
0.06
0.026
0.043
0.06
TJ = TJ max.
K/W
60°
0.10
0.10
30°
0.15
0.15
Ordering Information Table
DeviceCode
8AF
4
N
LV
1
2
3
4
1
2
3
-
-
-
Essential part number
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
N = Normal Polarity (cathode to case)
R = Reverse Polarity (anode to case)
PP = Without Lead
4
-
LH = Horizontal Lead
LV = Vertical Lead
OutlineTable
15.8 (0.62)
12.5 (0.49)
7 (0.28)
0.9 (0.03)
R 0.4 (0.02)
16.5 (0.65)
22.5 (0.89)
0.5 (0.02)
5 (0.20)
2.4 (0.09)
6 (0.24)
DIA. 12.77 / 13.27
(0.50) / (0.52)
All dimensions in millimeters (inches)
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3
8AF Series
Bulletin I20262 05/96
200
190
180
170
160
150
140
200
190
180
170
160
150
140
8AF Series
(DC) = 0.6 K/W
8AF Series
(DC) = 0.6 K/W
R
thJC
R
thJC
Conduction Angle
Conduction Period
90°
90°
60°
60°
120°
180°
120°
30°
30°
180°
DC
0
5
10 15 20 25 30 35 40 45 50 55
Average Forward Current(A)
0
10 20 30 40 50 60 70 80
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
180°
t
h
S
A
120°
90°
60°
30°
70
60
50
40
30
20
10
0
2
K
/
W
RMS Limit
3
K
/
W
Conduction Angle
8AF Series
T = 195°C
J
0
10
20
30
40
50
600
25
50
75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
90
80
70
60
50
40
30
20
10
0
t
DC
h
S
A
180°
120°
90°
60°
30°
1
.
5
K
/
W
2
K
/
W
RMS Limit
3
5
K
/
W
K
/
W
Conduction Period
1
0
K
/
W
8AF Series
T = 195°C
J
0
10 20 30 40 50 60 70 800
25
50
75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
4
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8AF Series
Bulletin I20262 05/96
750
700
650
600
550
500
450
400
350
300
250
200
150
700
650
600
550
500
450
400
350
300
250
200
150
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 195 °C
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
Initial T =195°C
RRM
J
No Voltage Reapplied
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Rated V
RRM
Reapplied
8AF Series
8AF Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1
1000
Steady State Value
(DCOperation)
8AF Series
100
0.1
10
T =25°C
J
8AF Series
1
T = 195°C
J
0.01
0.001
1
0.01
0.1
10
0
1
2
3
4
5
6
7
Square Wave Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
5
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