8TQ080S [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 8TQ080S |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20561 rev. D 07/03
8TQ...
8TQ...S
8 Amp
SCHOTTKY RECTIFIER
IF(AV) = 8 Amp
VR = 80 - 100V
Major Ratings and Characteristics
Description/ Features
The8TQ Schottkyrectifierserieshasbeenoptimizedfor low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse
battery protection.
Characteristics
8TQ
Units
I
Rectangular
waveform
8
A
F(AV)
V
I
range
80 -100
850
V
A
V
RRM
175° C T operation
J
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
@tp=5µssine
FSM
Low forward voltage drop
High frequency operation
V
@8Apk, T =125°C
J
0.58
F
J
Guard ring for enhanced ruggedness and long term
T
range
-55to175
°C
reliability
Case Styles
8TQ...
8TQ... S
D2PAK
TO-220
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1
8TQ... Series
Bulletin PD-20561 rev. D 07/03
Voltage Ratings
Part number
8TQ080
8TQ100
VR
Max. DC Reverse Voltage (V)
80
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
*SeeFig.5
8TQ Units
Conditions
8
A
50%dutycycle@TC =157°C,rectangularwaveform
Following any rated
load condition and
IFSM Max. PeakOneCycleNon-Repetitive
SurgeCurrent *SeeFig.7
850
230
5µs Sineor3µsRect.pulse
10msSineor6msRect. pulse
A
with rated VRRM applied
EAS Non-Repetitive Avalanche Energy
7.50
0.50
mJ
A
TJ=25°C, IAS= 0.50Amps,L= 60mH
Currentdecayinglinearlytozeroin1µsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
IAR
Repetitive Avalanche Current
Electrical Specifications
Parameters
8TQ Units
Conditions
VFM Max. Forward Voltage Drop
(1)
0.72
0.88
0.58
0.69
V
V
V
V
@
8A
@ 16A
8A
TJ = 25 °C
* See Fig. 1
@
@ 16A
TJ = 125 °C
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
0.55
7
500
8
mA
mA
pF
TJ = 25 °C
TJ = 125 °C
VR = rated VR
CT
LS
Max. Junction Capacitance
Typical Series Inductance
VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
nH
dv/dt Max. Voltage Rate of Change
(Rated VR)
10000
V/ µs
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
8TQ Units
Conditions
TJ
Max. Junction Temperature Range -55to175 °C
Tstg Max. Storage Temperature Range
-55to175 °C
RthJC Max. Thermal Resistance Junction
toCase
2.0
°C/W DC operation *SeeFig.4
RthCS TypicalThermalResistance, Caseto
Heatsink
0.50
°C/W Mountingsurface, smoothandgreased
wt
T
Approximate Weight
Mounting Torque
2(0.07) g(oz.)
Min.
Max.
6(5)
Kg-cm
(Ibf-in)
12(10)
2
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8TQ... Series
Bulletin PD-20238 rev. D 07/03
100
10
1000
100
10
T = 175°C
J
150°C
125°C
1
100°C
75°C
50°C
0.1
0.01
0.001
0.0001
25°C
0
20
40
60
80
100
Reverse Voltage - V (V)
T = 175°C
J
R
Fig.2-Typical Values of Reverse Current
T = 125°C
J
Vs. Reverse Voltage
T = 25°C
J
1000
T = 25°C
J
1
0.1
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2
0
10 20 30 40 50 60 70 80 90 100110
Forward Voltage Drop - V
(V)
Reverse Voltage - V (V)
FM
R
Fig. 1-Maximum Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
10
1
D = 0.75
P
DM
D = 0.50
0.1
D = 0.33
t
D = 0.25
D = 0.20
1
t
2
Notes:
0.01
1. Duty factor D = t / t
2
1
Single Pulse
(The rma l Re sist a nc e )
2. Peak T = PDMx Z
J
+ T
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (Seconds)
1
Fig.4-Maximum Thermal Impedance ZthJC Characteristics
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3
8TQ... Series
Bulletin PD-20561 rev. D 07/03
180
175
170
165
7
6
5
4
3
2
1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
160
RMS Lim it
DC
Square wave (D = 0.50)
155
150
145
140
80%Rated V applied
R
see note (2)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
(A)
Average Forward Current - I
(A)
Average Forward Current - I
F( AV)
F(AV)
Fig. 5-Maximum Allowable Case Temperature
Fig.6-Forward Power Loss Characteristics
Vs. Average Forward Current
1000
At Any Rated Load Condition
And With Rated V
Applied
RRM
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig. 7-Maximum Non-Repetitive Surge Current
L
HIG H-SPEED
SW ITC H
IRFP460
DUT
FREE-WHEEL
DIODE
Rg = 25 ohm
Vd = 25 Volt
+
C URRENT
MONITOR
40HFL40S02
Fig.8-Unclamped Inductive Test Circuit
(2) Formulaused:TC=TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR(1-D); IR @VR1=80%ratedVR
4
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8TQ... Series
Bulletin PD-20238 rev. D 07/03
Outline Table
10.54 (0.41)
MAX.
1.32 (0.05)
1.22 (0.05)
3.78 (0.15)
3.54 (0.14)
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
2°
1
3
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
Base
Cathode
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
1
3
Cathode
Anode
1
3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
5.08 (0.20) REF.
Conform to JEDEC outline TO-220AC
Dimensions in millimeters and (inches)
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
4.78 (0.19)
2.61 (0.10)
2.32 (0.09)
8.89 (0.35)
REF.
0.55 (0.02)
0.46 (0.02)
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
0.69 (0.27)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
Base
Cathode
2
2X
1
3
4.57 (0.18)
4.32 (0.17)
8.89 (0.35)
17.78 (0.70)
2
0.61 (0.02) MAX.
5.08 (0.20) REF.
3
1
3.81 (0.15)
2.08 (0.08)
Anode
N/C
2X
2.54 (0.10)
Conform to JEDEC outline D2Pak (SMD-220)
2X
Dimensions in millimeters and (inches)
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5
8TQ... Series
Bulletin PD-20561 rev. D 07/03
Ordering Information Table
Device Code
8
T
Q
100
S
1
2
3
4
5
1
2
3
4
5
-
Essential Part Number
T = TO-220
Q = Schottky Q Series
Voltage Rating
S = D2Pak
-
-
-
-
080 = 80V
100 = 100V
8TQ100
********************************************
*
*
*
*
This model has been developed by
Wizard SPICE MODEL GENERATOR (1999)
(International Rectifier Corporation)
Contain Proprietary Information
*
*
*
*
********************************************
* SPICE Model Diode is composed by a
* simple diode plus paralled VCG2T
*
*
********************************************
.SUBCKT 8TQ100 ANO CAT
D1 ANO 1 DMOD (0.07089)
*Define diode model
.MODEL DMOD D(IS=1.15938021883115E-03A,N=1.95244918720315,BV=120V,
+ IBV=5.37891460505463A,RS= 0.00127602,CJO=9.9895753025115E-09,
+ VJ=2.30070034831946,XTI=2, EG=0.758916909331649)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-90.2420977904848)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((1.635248E-02/-90.2421)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-
1))+1)*4.011038E-03*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS 8TQ100
Thermal Model Subcircuit
.SUBCKT 8TQ100 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.45E+00
4.54E+00
1.09E+01
1.01E+02
RTHERM1
RTHERM2
RTHERM1
RTHERM1
5
4
3
2
4
3
2
1
2.49E+00
5.20E-04
5.43E-01
3.05E-02
.ENDS 8TQ100
6
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8TQ... Series
Bulletin PD-20238 rev. D 07/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/03
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7
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