94MT80KB [INFINEON]
Silicon Controlled Rectifier, 90A I(T)RMS, 90000mA I(T), 800V V(DRM), 800V V(RRM), 6 Element, INT-A-PAK-12;型号: | 94MT80KB |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 90A I(T)RMS, 90000mA I(T), 800V V(DRM), 800V V(RRM), 6 Element, INT-A-PAK-12 局域网 栅 栅极 |
文件: | 总10页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I27504 08/97
MT..KB SERIES
Power Modules
THREE PHASE AC SWITCH
Features
50 A
90 A
Package fully compatible with the industry standard INT-A-pak
power modules series
100 A
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
isolating voltage
RMS
UL E78996 approved
Description
A range of extremely compact, encapsulated three phase
AC-switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.
Major Ratings and Characteristics
Parameters
IO
54MT.KB 94MT.KB 104MT.KB Units
50
80
90
80
100
80
A
°C
A
@ TC
IFSM @50Hz
390
410
770
700
7700
950
1130
1180
6380
5830
63800
@60Hz
2
1000
4525
4130
A
2
I t
@50Hz
@60Hz
A s
2
A s
2
2
I √t
45250
A √s
VRRM range
TSTG range
800 to 1600
V
-40 to 125
-40 to 125
°C
°C
TJ
range
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1
54-94-104MT..KB Series
Bulletin I27504 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM, maximum
VRSM, maximum
VDRM, max. repetitive IRRM /IDRMmax.
Type number
repetitive peak
reverse voltage
V
non-repetitive peak
reverse voltage
V
peak off-state voltage, @ TJ = 125°C
gate open circuit
V
mA
80
800
900
1100
1300
1500
1700
900
800
100
120
140
160
80
1000
1200
1400
1600
800
1000
1200
1400
1600
800
54MT..KB
20 *
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
94/104MT..KB
40 *
* For single AC switch
Forward Conduction
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
IO
Maximum IRMS output current
@ Case temperature
50
90
100
A
For all conduction angle
80
80
80
°C
A
ITSM Maximum peak, one-cycle
forward, non-repetitive
390
950
1130
t = 10ms No voltage
t = 8.3ms reapplied
410
1000
1180
on state surge current
330
345
770
700
540
800
840
950
t = 10ms 100% VRRM
t = 8.3ms reapplied
1000
6380
5830
4510
Initial
I2t
Maximum I2t for fusing
4525
4130
3200
A2s t = 10ms No voltage
t = 8.3ms reapplied
TJ = TJ max.
t = 10ms 100% VRRM
500
7700
1.16
2920
45250
0.99
4120
63800
0.99
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold
voltage
1.44
12.54
11.00
2.68
1.19
4.16
3.56
1.55
150
1.15
3.90
3.48
1.53
(I > π x IT(AV)), @ TJ max.
r
Low level value on-state
slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT ), @ T max.
(AV)
J
t1
r
High level value on-state
slope resistance
(I > π x IT(AV)), @ TJ max.
t2
VTM Maximum on-state voltage drop
V
Ipk = 150A, TJ = 25°C
tp = 400µs single junction
di/dt Max. non-repetitive rate
of rise of turned oncurrent
A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x IT(AV)
=500mA,t <0.5µs,t >6µs
,
I
p
g
r
IH
Max. holding current
200
TJ =25oC, anodesupply=6V,
mA resistive load, gate open circuit
TJ =25oC,anode supply=6V,resistive load
IL
Max. latching current
400
2
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54-94-104MT..KB Series
Bulletin I27504 08/97
Blocking
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
VINS RMS isolation voltage
4000
V
TJ = 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise
of off-state voltage (*)
500
V/µs TJ = TJ max., linear to 0.67 VDRM
gate open circuit
,
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90.
Triggering
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
PGM Max. peak gate power
PG(AV) Max. average gate power
10
2.5
2.5
10
W
TJ = TJ max.
IGM
Max. peak gate current
A
V
-VGT Max. peak negative
gate voltage
VGT
Max. required DC gate
voltage to trigger
4.0
2.5
V
TJ =-40°C Anodesupply=6V,resistiveload
TJ = 25°C
1.7
TJ = 125°C
IGT
Max. required DC gate
current to trigger
270
150
80
TJ =-40°C Anodesupply=6V,resistiveload
mA TJ = 25°C
TJ =125°C
VGD Max. gate voltage
that will not trigger
0.25
V
@ TJ = TJ max., ratedVDRMapplied
IGD
Max. gate current
that will not trigger
6
mA
Thermal and Mechanical Specifications
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
TJ
Max. junction operating
temperature range
-40 to 125
°C
Tstg
Max. storage temperature
range
-40 to 125
°C
RthJC Max. thermal resistance,
junction to case
0.52
1.05
0.56
1.12
0.39
0.77
0.40
0.80
0.03
0.34
0.69
0.36
0.72
K/W DC operation per single AC switch
DC operation per junction
180° Sine cond. angle per single AC switch
180° Sine cond. angle per junction
RthCS Max. thermal resistance,
case to heatsink
K/W Per module
Mounting surface smooth, flat and greased
A mounting compound is recommended and the
Nm
T
Mounting
to heatsink
to terminal
4 to 6
3 to 4
225
torque should be rechecked after a period of 3
hoursto allow for the spread of the compound.
torque ± 10%
Lubricatedthreads.
g
wt
Approximate weight
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3
54-94-104MT..KB Series
Bulletin I27504 08/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Devices
Units
180o
0.072
0.033
0.027
120o
0.085
0.039
0.033
90o
60o
30o
180o
0.055
0.027
0.023
120o
0.091
0.044
0.037
90o
60o
30o
54MT.KB
94MT.KB
104MT.KB
0.108
0.051
0.042
0.152
0.069
0.057
0.233
0.099
0.081
0.117
0.055
0.046
0.157
0.071
0.059
0.236 K/W
0.100
0.082
Ordering Information Table
Device Code
10
4
MT 160
K
B
S90
5
1
2
3
4
6
1
-
Current rating code: 5 = 50 A (Avg)
= 90 A (Avg)
10 = 100 A (Avg)
9
2
3
4
5
6
-
-
-
-
-
AC Switch
Essential part number
Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)
Generation II
Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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54-94-104MT..KB Series
Bulletin I27504 08/97
Outline Table (with optional barriers)
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
All dimensions in millimeters (inches)
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5
Optional Hardware
MT..KB Series
GATE LEADS
Ident No.
Device Series
Description
6443.2112.AA
6443.2113.AA
6443.2114.AA
51, 91, 111MT..KB
52, 92, 112MT..KB
2 DX connectors with yellow and white leads
1 SX + 1 DX connectors with yellow and white leads
1 SX + 2 DX connectors with yellow and white leads
53, 93, 113MT..KB
54, 94, 104MT..KB
All dimensions are in millimeters (inches)
BARRIERS
Ident No. 6444.0211.AA for all MT..KB Series
Barriers Mounting Instructions
Coat uniformly the groove on the plastic box
with a silicon adhesive. Insert the barriers into
the groove on the plastic box. Cure the silicon
adhesive according to its technical notes.
We suggest the use of DOW CORNING
Silastic 744RTV (time curing 30 min. at room
temperature).
All dimensions are in millimeters (inches)
Bulletin I27900 rev. A 12/99
1
54-94-104MT..KB Series
Bulletin I27504 08/97
130
1000
100
10
54MT..KB Series
Device Fully Turned-on
T = 25°C
J
120
110
100
90
T = 125°C
J
Per Single AC Switch
80
54MT..KB Series
Per Junction
70
For all Conduction Angles
60
1
0
10
20
30
40
50
60
0
1
2
3
4
5
6
Instantaneous On-state Voltage (V)
RMSOutput Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Forward Voltage Drop Characteristics
350
54MT..KB Series
180°
0
.
1
t
h
S
T = 125°C
Device Fully
Turned-on
K
/
J
A
300
250
200
150
100
50
120°
90°
60°
30°
W
0
.
3
K
/
W
0
.
7
K
/
W
1
2
K
/
W
Conduction Angle
K
/
W
0
0
10
20
30
40
50
60
0
25
50
75
100
125
RMS Output Current (A)
MaximumAllowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
350
325
300
275
250
225
200
400
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Applied Following Surge.
Initial T = 125°C
RRM
J
350
300
250
200
150
Initial T = 125°C
J
No Voltage Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Rated V
Reapplied
RRM
175 54MT..KB Series
Per Junction
150
1
54MT..KB Series
Per Junction
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
6
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54-94-104MT..KB Series
Bulletin I27504 08/97
130
120
110
100
90
1000
100
10
94MT..KB Series
Device Fully Turned-on
T = 25°C
J
Per Single AC Switch
80
T =125°C
J
70
94MT..KB Series
Per Junction
60
For all Conduction Angles
50
1
0
20
40
60
80
100 120
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
RMS Output Current (A)
Fig. 6 - Current Ratings Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
450
94MT..KB Series
T = 125°C
Device Fully
Turned-on
R
400
350
300
250
200
150
100
50
J
0
.
1
180°
120°
90°
60°
30°
5
=
0
K
/
.
W
0
3
K
/
W
0
-
.
3
D
e
K
/
W
l
t
a
R
0
.
5
K
/
W
0
.
7
K
/
W
Conduction Angle
1
K
/W
1
.5
K
/
W
0
0
10 20 30 40 50 60 70 80 90 100
0
25
50
75
100
125
RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
750
700
650
600
550
500
450
1000
900
800
700
600
500
400
300
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Applied Following Surge.
Initial T =125°C
RRM
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
400 94MT..KB Series
Per Junction
350
1
94MT..KB Series
Per Junction
10
100
0.01
0.1
1
Number Of Equal Amplitude Half CycleCurrent Pulses (N)
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
7
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54-94-104MT..KB Series
Bulletin I27504 08/97
1000
100
10
130
104MT..KB Series
Device Fully Turned-on
120
110
100
90
Per Single AC Switch
T = 25°C
J
T = 125°C
J
80
104MT..KB Series
Per Junction
70
For all Conduction Angles
60
1
0
1
2
3
4
5
0
20
40
60
80
100 120
Instantaneous On-state Voltage (V)
RMS Output Current (A)
Fig. 11 - Current Ratings Characteristic
Fig. 12 - Forward Voltage Drop Characteristics
500
104MT..KB Series
T = 125°C
180°
120°
90°
60°
30°
450
400
350
300
250
200
150
100
50
J
DeviceFully
Turned-on
0
.
3
K
/
W
0
.
5
K
/
W
Conduction Angle
0
.
7
K
/
W
1
K
/
W
1
.
5
K
/
W
0
0
20
40
60
80
100
10
25
50
75
100
125
RMS Output Current (A)
Fig. 13 - Total Power Loss Characteristics
1100
1000
900
800
700
600
500
400
1200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
Initial T =125°C
RRM
1100
1000
900
800
700
600
500
400
J
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
104MT..KB Series
Per Junction
104MT..KBSeries
Per Junction
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
8
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54-94-104MT..KB Series
Bulletin I27504 08/97
10
1
Steady State Value
R
R
R
=1.05 K/W
=0.77 K/W
=0.69 K/W
thJC
thJC
thJC
54MT..KB Series
94MT..KB Series
(DC Operation)
104MT..KB Series
0.1
0.01
0.001
Per Junction
1
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gatepulse
(1) PGM = 100 W, tp = 500 µs
a) Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b) Recommended load line for
<= 30% rated di/dt: 20V, 65 ohms
tr = 1 µs, tp >=6 µs
(2) PGM=50 W, tp =1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM=10 W, tp =5 ms
(a)
(b)
(4)
(2) (1)
(3)
VGD
IGD
54/ 94/ 104MT..KB Series
0.1
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.01
1
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
9
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