A12FR80 [INFINEON]
STANDARD RECOVERY DIODES; 标准恢复二极管![A12FR80](http://pdffile.icpdf.com/pdf1/p00071/img/icpdf/A12FR80_375054_icpdf.jpg)
型号: | A12FR80 |
厂家: | ![]() |
描述: | STANDARD RECOVERY DIODES |
文件: | 总6页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I20205 rev. A 09/98
12F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
12 A
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V VRRM
TypicalApplications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
IF(AV)
12F(R)
12
Units
A
@ TC
144
19
°C
A
IF(RMS)
IFSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
range
265
A
280
A
I2t
351
A2s
A2s
V
320
VRRM
TJ
100 to 1200
- 65 to 175
case style
DO-203AA (DO-4)
range
°C
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1
12F(R) Series
Bulletin I20205 rev. A 09/98
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM, maximum
VRSM, maximum non-
VR(BR), minimum
IRRM max.
Type number
repetitive peak
reverse voltage
V
repetitive peak
reverse voltage
V
avalanche
voltage
@ TJ = 175°C
V
(1)
mA
10
20
100
200
150
275
--
--
40
400
500
500
750
950
1150
1350
12F(R)
60
600
725
12
80
800
950
100
120
1000
1200
1200
1400
(1) Avalanche version only available from VRRM 400V to 1200V.
Forward Conduction
Parameter
12F(R)
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
12
144
19
A
°C
A
180° conduction, half sine wave
IF(RMS) Max. RMS forward current
PR
Maximum non-repetitive
peak reverse power
7
K/W 10µs square pulse, TJ = TJ max.
see note (2)
IFSM
Max. peak, one-cycle forward,
265
280
225
235
351
320
250
226
3510
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
A2s
100% VRRM
reapplied
I2√t
Maximum I2√t for fusing
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.77
0.97
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
10.70
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
6.20
1.26
(I > π x IF(AV)), TJ = TJ max.
VFM
Max. forward voltage drop
V
I = 38A, TJ = 25°C, t = 400µs rectangular wave
pk p
(2) Available only for Avalanche version, all other parameters the same as 12F.
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2
12F(R) Series
Bulletin I20205 rev. A 09/98
Thermal and Mechanical Specifications
Parameter
12F(R)
Units Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
-65 to 175
-65 to 200
°C
stg
RthJC Max. thermal resistance, junction to case
2
DC operation
K/W
Nm
RthCS Max. thermal resistance, case
to heatsink
Mounting surface, smooth, flat and
greased
0.5
T
Mounting torque, ± 10%
1.2
Lubricated threads
(1.5)
(Not lubricated threads)
See Outline Table
wt
Approximate weight
Case style
7 (0.25)
g (oz)
DO-203AA (DO-4)
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.33
0.41
0.53
0.78
1.28
0.26
0.44
0.58
0.81
1.29
K/W
60°
30°
Ordering Information Table
Device Code
A
12
F
R
120
M
1
2
3
4
5
6
1
-
A
= Avalanche diode
None = Standard diode
2
3
4
-
-
-
Current rating: Code = IF(AV)
F
= Standard device
None = Stud Normal Polarity (Cathode to Stud)
= Stud Reverse Polarity (Anode to Stud)
R
5
6
-
-
Voltage code: Code x 10 = VRRM (See Voltage Ratings table)
None = StudbaseDO-203AA(DO-4)10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
3
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12F(R) Series
Bulletin I20205 rev. A 09/98
Outlines Table
Case Style DO-203AA (DO-4)
All dimensions in millimeters (inches)
180
180
12F(R) Series
R (DC) =2.0 K/W
12F(R) Series
R
(DC) =2.0 K/W
thJC
thJC
170
160
150
140
130
170
160
150
140
Conduction Period
Conduction Angle
30°
60°
90°
120°
30°
60°
90°
180°
120°
DC
16
180°
0
2
4
6
8
10 12 14
0
4
8
12
20
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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4
12F(R) Series
Bulletin I20205 rev. A 09/98
14
12
10
8
6
1
180°
120°
90°
60°
30°
K
/
W
t
0
h
S
K
A
/
W
1
2
K
/
W
1
5
K
/
W
RMS Limit
3
6
0
K
/
W
Conduction Angle
4
12F(R) Series
T = 175°C
2
J
0
0
2
4
6
8
10 12 104
25
50
75
100
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
20
16
12
8
DC
t
h
S
A
180°
120°
90°
60°
30°
1
0
K
/
W
1
2
K
/
W
1
5
K
K
/
W
2
0
RMS Limit
/
W
Conduction Period
3
0
K
/
W
4
12F(R) Series
T =175°C
J
0
0
4
8
12
16
200
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
250
225
200
175
150
125
100
275
250
225
200
175
150
125
100
At Any Rated Load Condition And With
Rated V
MaximumNon Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 175°C
Applied Following Surge.
Initial T = 175°C
RRM
J
J
No Voltage Reapplied
Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Rated V
RRM
12F(R) Series
12F(R)Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal AmplitudeHalf Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
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12F(R) Series
Bulletin I20205 rev. A 09/98
10
1000
Steady State Value
= 2.0 K/W
T = 25°C
J
R
thJC
(DC Operation)
T =175°C
J
100
10
1
1
12F(R)Series
1
12F(R) Series
0.1
0.001
0.01
0.1
10
0
1
2
3
4
5
6
Square Wave Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
6
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A12FR80M
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN
VISHAY
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