AIGB50N65F5 [INFINEON]
Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.;![AIGB50N65F5](http://pdffile.icpdf.com/pdf2/p00359/img/icpdf/AIGB50N65F5_2199306_icpdf.jpg)
型号: | AIGB50N65F5 |
厂家: | ![]() |
描述: | Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. 功率因数校正 |
文件: | 总14页 (文件大小:1466K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
HighꢀspeedꢀFASTꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnology
ꢀ
C
E
FeaturesꢀandꢀBenefits:
ꢀꢀꢀHighꢀspeedꢀF5ꢀtechnologyꢀoffering:
•ꢀꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
ꢀꢀꢀtopologies
•ꢀꢀ650Vꢀbreakdownꢀvoltage
•ꢀꢀLowꢀgateꢀchargeꢀQG
G
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀꢀDynamicallyꢀstressꢀtested
•ꢀꢀQualifiedꢀaccordingꢀtoꢀAEC-Q101
•ꢀꢀGreenꢀpackageꢀ(RoHSꢀcompliant)
•ꢀꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
ꢀꢀꢀhttp://www.infineon.com/igbt/
C
Applications:
•ꢀꢀOff-boardꢀcharger
•ꢀꢀOn-boardꢀcharger
•ꢀꢀDC/DCꢀconverter
•ꢀꢀPower-factorꢀcorrection
G
E
Packageꢀpinꢀdefinition:
•ꢀꢀPinꢀ1ꢀ-ꢀgate
•ꢀꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀꢀPinꢀ3ꢀ-ꢀemitter
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.6V 175°C
Marking
Package
AIGB50N65F5
650V
50A
AG50EF5
PG-TO263-3
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2019-10-19
AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IC
80.0
56.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
150.0
150.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
VGE
Ptot
V
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
305.0
152.5
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-a)
-
-
-
-
0.50 K/W
65 K/W
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
40 K/W
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.60 2.10
1.80
1.90
-
-
Tvjꢀ=ꢀ175°C
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
1000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
50.0
1) Defined by design. Not subject to production test.
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
3000
65
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
11
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
115.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
23
16
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
166
13
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.55
0.11
0.66
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
5
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ6.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
172
28
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.13
0.04
0.17
mJ
mJ
mJ
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
22
17
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
179
9
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.74
0.15
0.89
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
6
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ6.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
205
19
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.21
0.06
0.27
mJ
mJ
mJ
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
350
300
250
200
150
100
50
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
150
150
VGE=20V
VGE=20V
135
120
105
90
75
60
45
30
15
0
135
120
105
90
75
60
45
30
15
0
18V
15V
12V
10V
8V
18V
15V
12V
10V
8V
7V
7V
6V
6V
5V
5V
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
150
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Tvj = 25°C
Tvj = 150°C
IC = 6.25A
IC = 12.5A
IC = 25A
135
IC = 50A
120
105
90
75
60
45
30
15
0
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
30
60
90
120
150
5
15
25
35
45
55
65
75
85
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=25A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
typ.
min.
max.
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
(IC=0.5mA)
IC=25A,ꢀrG=12Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure
E)
13
12
11
10
9
3.2
Eoff
Eon
Ets
Eoff
Eon
Ets
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
7
6
5
4
3
2
1
0
0
30
60
90
120
150
5
15
25
35
45
55
65
75
85
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=12Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=25A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=25A,ꢀrG=12Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,
IC=25A,ꢀrG=12Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
16
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Co(er)
Coes
Cres
1E+4
1000
100
10
14
12
10
8
6
4
2
0
1
0
20
40
60
80
100
120
0
50
100 150 200 250 300 350 400
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=50A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 3.6E-3 0.119435 0.182725 0.177799 0.014558 2.0E-3
τi[s]:
1.1E-5 2.8E-4
1.9E-3
9.4E-3
0.149024 2.064771
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Datasheet
10
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AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
10.31
8.60
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
0.386
0.256
Z8B00003324
0
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
Datasheet
11
Vꢀ2.1
2019-10-19
AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
12
Vꢀ2.1
2019-10-19
AIGB50N65F5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
AIGB50N65F5
Revision:ꢀ2019-10-19,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2019-10-19 Final Datasheet
Datasheet
13
Vꢀ2.1
2019-10-19
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