AIMW120R060M1H [INFINEON]
AIMW120R060M1H专为满足汽车行业对可靠性、质量和性能的高要求而设计。;
| 型号： | AIMW120R060M1H |
| 厂家： | 
Infineon |
| 描述： | AIMW120R060M1H专为满足汽车行业对可靠性、质量和性能的高要求而设计。 |
| 文件： | 总17页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIMW120R060M1H
AIMW120R060M1H
CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1
Silicon Carbide MOSFET
Drain
pin 2
Features
Gate
pin 1
•
•
•
•
•
•
•
•
•
Revolutionary semiconductor material - Silicon Carbide
Very low switching losses
Threshold-free on state characteristic
IGBT-compatible driving voltage (18V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Source
pin 3
Commutation robust body diode, ready for synchronous rectification
Temperature independent turn-off switching losses
Benefits
1
•
•
•
•
•
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
3
Reduction of system complexity and cost
Potential Applications
•
•
On-board Charger/PFC
Booster/DC-DC Converter
Product validation
Qualified for Automotive Applications. Product Validation according to AEC-Q100/101
Table 1
Key Performance and Package Parameters
RDS(on),typ
(Tvj = 25°C, ID = 13A,
ID
Type
VDS
Tvjmax
Marking
Package
(TC=25°C, Rth(j-c,max)
)
VGS = 18V)
AIMW120R060M1H
1200V
36A
60mΩ
175°C
A120M1060
PG-TO247-3-41
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
v01_00
2021-03-09
www.infineon.com
AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits......................................................................................................................................... 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
Maximum ratings ................................................................................................................... 3
Thermal resistances ............................................................................................................... 4
3
Electrical Characteristics ........................................................................................................ 5
Static characteristics...............................................................................................................................5
Dynamic characteristics..........................................................................................................................6
Switching characteristics........................................................................................................................7
3.1
3.2
3.3
4
5
6
Electrical characteristic diagrams ............................................................................................ 8
Package drawing...................................................................................................................14
Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Datasheet
2 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings1
Parameter
Symbol
Value
Unit
V
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
ID
36
26
A
A
1
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
ID,pulse
74
DC body diode forward current for Rth(j-c,max)
,
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
A
A
V
36
22
1
Pulsed body diode current, tp limited by Tvjmax
Gate-source voltage2
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Power dissipation, limited by Tvjmax
TC = 25°C
ISD,pulse
74
VGS
VGS,on
VGS,off
-7… 23
18
0
Ptot
150
75
W
TC = 100°C
°C
°C
Virtual junction temperature
Storage temperature
Tvj
-55… 175
-55… 150
Tstg
Soldering temperature,
wave soldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque, M3 screw
Tsold
260
0.6
°C
M
Nm
Maximum of mounting processes: 3
1 v Not subject to production test. Parameter verified by design/characterization.
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Thermal resistances1
Value
Unit
Symbol Conditions
min.
typ.
0.8
max.
1
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
-
K/W
K/W
Thermal resistance,
junction – ambient
1 Not subject to production test. Parameter verified by design/characterization.
Rth(j-a)
leaded
-
-
62
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance2
RDS(on) VGS = 18V, ID = 13A,
Tvj = 25°C
-
-
-
60
76
113
78
-
-
mΩ
Tvj = 100°C
Tvj = 175°C
VGS = 0V, ISD = 13A
Tvj = 25°C
Body diode forward
voltage
VSD
-
-
-
3.8
3.7
3.6
5.2
-
-
V
Tvj = 100°C
Tvj = 175°C
Gate-source threshold
voltage
VGS(th)
(tested after 1 ms pulse at
VGS = 20V)
ID = 5,6mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
V
3.5
-
4.5
3.6
5.7
-
Zero gate voltage drain
current
IDSS
VGS = 0V, VDS = 1200V
Tvj = 25°C
Tvj = 175°C
-
-
-
-
-
-
1
30
-
180
-
µA
Gate-source leakage
current
IGSS
VGS = 23V, VDS = 0V
VGS = -7V, VDS = 0V
VDS = 20V, ID = 13A
f = 1MHz, VAC = 25mV
100
nA
nA
S
-
-100
Transconductance
gfs
7
6
-
-
Internal gate resistance
RG,int
Ω
2
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
1060
58
max.
Input capacitance
Output capacitance
Reverse capacitance
Coss stored energy
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Eoss
QG
pF
µJ
nC
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
6.5
22
31
Total gate charge
VDD = 800V, ID = 13A,
VGS = 0/18V, turn-on pulse
9
7
Gate to source charge
Gate to drain charge
QGS,pl
QGD
Datasheet
6 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 4
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 13A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
8
-
-
-
-
-
-
-
16
16
13
167
79
246
ns
µJ
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 13A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
116
5
-
-
Diode peak reverse
recovery current
Irrm
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 800V, ID = 13A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
-
-
-
-
-
-
-
8
-
-
-
-
-
-
-
19
ns
µJ
Turn-off delay time
Fall time
17
13
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
241
103
344
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
VDD = 800V, ISD = 13A,
VGS at diode = 0V,
dif/dt= 1000A/µs,
Qrr includes also QC ,
see Fig. C
nC
A
-
-
244
7
-
-
Diode peak reverse
recovery current
Irrm
4 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
250
200
150
100
50
80
60
40
20
0
not for linear use
Rth(j-c,max)
Rth(j-c,typ)
0
0
400
800
1200
0
25 50 75 100 125 150 175
VDS [V]
TC [ C]
Figure 1
Safe operating area (SOA)
(VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C)
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
Rth(j-c,max)
Rth(j-c,typ)
Rth(j-c,max)
Rth(j-c,typ)
0
0
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
TC [ C]
TC [ C]
Figure 3
Maximum DC drain to source current as Figure 4
a function of case temperature limited
by bond wire (IDS = f(TC))
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
100
6
5
4
3
2
1
0
80
25 C
175 C
60
40
20
0
-40
10
60
110
160
0
5
10
GS [V]
15
20
Tvj [ C]
V
Figure 5
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
Figure 6
Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 5,6mA, VGS = VDS)
100
80
60
40
20
0
100
80
60
40
20
0
20V
20V
18V
16V
15V
14V
12V
10V
8V
18V
16V
15V
14V
12V
10V
8V
6V
6V
0
4
8
12
16
20
0
4
8
12
16
20
VDS [V]
VDS [V]
Figure 7
Typical output characteristic, VGS as
parameter
Figure 8
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
Datasheet
9 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
150
18
16
14
12
10
8
125
VGS = 18V
100
75
50
25
0
6
4
2
0
-40
10
60
110
160
0
10
20
30
40
Tvj [ C]
QG [nC]
Figure 9
Typical on-resistance as a function of
junction temperature
Figure 10 Typical gate charge
(VGS = f(QG), IDS = 13A, VDS = 800V, turn-on
(RDS(on) = f(Tvj), IDS = 13A)
pulse)
6
5
4
3
2
1
0
10000
1000
100
10
Ciss
Coss
Crss
1
1
10
100
1000
-50
0
50
100 150 200
VDS[V]
Tj [ C]
Figure 11 Typical capacitance as a function of
drain-source voltage
Figure 12 Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=13A)
(C = f(VDS), VGS = 0V, f = 1MHz)
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
30
25
20
15
10
5
VGS=18V
VGS=0V
0
0
1
2
3
4
5
6
VSD [V]
Figure 14 Typical body diode forward current as
function of forward voltage, VGS as
parameter
Figure 13 Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
1500
400
Etot
Etot
Eon
Eon
1250
Eoff
Eoff
300
1000
200
100
0
750
500
250
0
25
75
125
175
0
10
20
ID [A]
30
40
T [ C]
Figure 15 Typical switching energy losses as a
function of junction temperature
Figure 16 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at VGS
= 0V)
(E = f(Tvj), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, ID = 13A, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
2000
Etot
80
60
40
20
0
td(on)
tr
td(off)
tf
Eon
Eoff
1500
1000
500
0
0
10 20 30 40 50 60
RG,ext [Ohm]
0
20
40
60
RG,ext [Ohm]
Figure 17 Typical switching energy losses as a
function of gate resistance
Figure 18 Typical switching times as a function of
gate resistor
(E = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 13A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
(t = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 13A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
Figure 19 Typical reverse recovery charge as a
function of diode current slope
Figure 20 Typical reverse recovery current as a
function of diode current slope
(Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 13A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
(Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 13A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
Datasheet
12 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
10.00
1.00
0.10
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
i:
1
2
3
4
ri: [K/W] 3.15E-01
τi: [s]
3.05E-02
1.29E-05
3.50E-01
2.51E-03
3.44E-01
1.23E-02
4.61E-04
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21 Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
Datasheet
13 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
PG-TO247-3-41
Figure 22
Package drawing
Datasheet
14 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
2%
Figure 23
Test conditions
Datasheet
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AIMW120R060M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
V01_00
2021-03-09
-
Datasheet
16 of 17
v01_00
2021-03-09
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2021.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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