AUIRF3808STRL [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | AUIRF3808STRL |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总13页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97698A
AUTOMOTIVE GRADE
AUIRF3808S
HEXFET® Power MOSFET
Features
●
●
●
●
●
●
●
●
●
Advanced Planar Technology
D
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
75V
RDS(on) typ.
5.9m
7.0m
G
max.
S
ID
106A
Description
SpecificallydesignedforAutomotiveapplications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing tech-
niques to achieve low on-resistance per silicon
area. This benefit combined with the fast switch-
ing speed and ruggedized device design that
HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
and reliable device for use in Automotive and a
wide variety of other applications.
S
D
G
D2Pak
AUIRF3808S
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
106
Units
75
A
550
PD @TC = 25°C
200
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
1.3
VGS
EAS
IAR
± 20
Gate-to-Source Voltage
430
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
82
See Fig. 12a, 12b, 15, 16
5.5
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.75
40
Units
°C/W
RJC
Junction-to-Case
R
Junction-to-Ambient (PCB Mounted, steady-state)
–––
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
AUIRF3808S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75
–––
–––
V
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 82A
V(BR)DSS/TJ
RDS(on)
––– 0.086 ––– V/°C
–––
2.0
5.9
–––
–––
–––
–––
–––
7.0
4.0
–––
20
m
V
VDS = VGS, ID = 250μA
VDS = 25V, ID = 82A
VGS(th)
gfs
IDSS
Forward Transconductance
100
–––
–––
–––
–––
S
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
Drain-to-Source Leakage Current
μA
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -20V
––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
Qg
Conditions
ID = 82A
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
150
31
220
47
nC
VDS = 60V
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VGS = 10V
50
76
VDD = 38V
ID = 82A
16
–––
–––
–––
–––
–––
ns
140
68
td(off)
tf
RG = 2.5
VGS = 10V
Turn-Off Delay Time
Fall Time
120
4.5
D
S
LD
Internal Drain Inductance
nH Between lead,
6mm (0.25in.)
G
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
VGS = 0V
Ciss
Input Capacitance
––– 5310 –––
pF
V
DS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
–––
–––
890
130
–––
–––
Crss
ƒ
Coss
––– 6010 –––
––– 570 –––
V
GS = 0V, VDS = 60V, ƒ = 1.0MHz
Coss
VGS = 0V, VDS = 0V to 60V
Coss eff.
Effective Output Capacitance (Time Related) ––– 1140 –––
Diode Characteristics
Symbol Parameter
Conditions
MOSFET symbol
showing the
Min. Typ. Max. Units
D
S
IS
Continuous Source Current
–––
–––
106
A
A
V
(Body Diode)
G
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
550
p-n junction diode.
TJ = 25°C, IS = 82A, VGS = 0V
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
93
1.3
140
510
ns TJ = 25°C, IF = 82A
di/dt = 100A/μs
Qrr
ton
340
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.130mH
RG = 25, IAS = 82A. (See Figure 12).
ISD 82A, di/dt 310A/μs, VDD V(BR)DSS
TJ 175°C
as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
,
Pulse width 400μs; duty cycle 2%.
R is measured at TJ approximately 90°C.
2
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AUIRF3808S
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D2Pak
MSL1
Moisture Sensitivity Level
Class M4 (+/- 800V) †††
Machine Model
AEC-Q101-002
Class H2 (+/- 4000V) †††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V) †††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
www.irf.com
3
AUIRF3808S
1000
100
10
1000
VGS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
100
10
1
4.5V
4.5V
20μs PULSE WIDTH
20μs PULSE WIDTH
°
°
T = 25
J
C
T = 175
J
C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000.00
100.00
10.00
137A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T = 175°C
J
T = 25°C
J
V
= 15V
DS
20μs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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AUIRF3808S
12
10
8
100000
10000
1000
D
I
= 82A
V
C
= 0V,
f = 1 MHZ
V
V
V
= 60V
= 37V
= 15V
GS
DS
DS
DS
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6
4
Coss
2
Crss
0
100
0
40
80
120
160
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
T
= 25°C
J
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
10msec
100
GS
1
0.10
1
10
1000
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF3808S
RD
VDS
120
100
80
60
40
20
0
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width µs
Duty Factor
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
t
2
SINGLE PULSE
0.01
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3808S
15V
800
640
480
320
160
0
I
D
TOP
34A
58A
82A
DRIVER
+
L
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
( C)
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
3.5
V
G
3.0
2.5
2.0
1.5
1.0
Charge
I
= 250μA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
T , Temperature ( °C )
V
GS
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF3808S
10000
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
Duty Cycle = Single Pulse
assuming
Tj = 25°C due to
100
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
10
1
0.1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
500
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 140A
Single Pulse
I
400
300
200
100
0
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF3808S
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
-
+
-
RG
+
-
dv/dt controlled by RG
VDD
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. For N-channel HEXFET® power MOSFETs
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9
AUIRF3808S
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF3808S
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3808S
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF3808S
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
AUIRF3808S
D2Pak
AUIRF3808S
AUIRF3808STRL
AUIRF3808STRR
800
800
12
www.irf.com
AUIRF3808S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-
iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable
for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify
and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even
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such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
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number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13
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