AUIRF7759L2TR1 [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AUIRF7759L2TR1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总12页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96426
AUTOMOTIVE GRADE
AUIRF7759L2TR
AUIRF7759L2TR1
•
•
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Automotive DirectFET® Power MOSFET
V(BR)DSS
75V
•
•
•
•
•
•
RDS(on) typ.
1.8m
2.3m
Ω
Ω
max.
ID (Silicon Limited)
Qg
160A
200nC
•
•
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
S
S
S
S
D
D
G
S
S
S
S
DirectFET®ISOMETRIC
L8
Applicable DirectFET® Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Max.
75
Parameter
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
±20
160
113
26
V
GS
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TC = 25°C
D
D
D
D
@ TC = 100°C
@ TA = 25°C
@ TC = 25°C
A
375
640
125
63
DM
P
P
P
@TC = 25°C
@TC = 100°C
@TA = 25°C
Power Dissipation
D
D
D
W
Power Dissipation
3.3
Power Dissipation
EAS
IAR
257
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
See Fig.18a, 18b, 16, 17
EAR
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
mJ
270
T
T
T
P
J
-55 to + 175
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
1.2
RθJA
RθJ-Can
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
Linear Derating Factor
0.5
0.83
HEXFET® is a registered trademark of International Rectifier.
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1
03/28/12
AUIRF7759L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
VGS = 0V, ID = 250μA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75
–––
0.02
1.8
–––
–––
2.3
4.0
V
Reference to 25°C, ID = 2mA
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
–––
–––
2.0
V/°C
V
GS = 10V, ID = 96A
m
Ω
3.0
V
VDS = VGS, ID = 250μA
ΔVGS(th)/ΔTJ
gfs
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
74
-11
––– mV/°C
VDS = 25V, ID = 96A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
–––
–––
–––
–––
–––
–––
20
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
nC
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Qgs1
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
200
37
11
62
91
73
60
1.1
18
37
80
33
300
–––
–––
93
VDS = 38V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
V
GS = 10V
Qgs2
Qgd
ID = 96A
Qgodr
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 9
Qsw
V
DS = 16V, VGS = 0V
Qoss
RG
nC
Gate Resistance
Ω
VDD = 38V, VGS = 10V
ID = 96A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
ns
RG=1.8Ω
Turn-Off Delay Time
Fall Time
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 12222 –––
––– 1465 –––
VDS = 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
pF ƒ = 1.0MHz
–––
––– 7457 –––
––– 955 –––
609
–––
V
GS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 60V, f=1.0MHz
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
MOSFET symbol
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
IS
–––
–––
160
showing the
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
640
p-n junction diode.
TJ = 25°C, IS = 96A, VGS = 0V
TJ = 25°C, IF = 96A, VDD = 38V
di/dt = 100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
64
1.3
96
V
ns
nC
Qrr
150
225
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 10
2
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AUIRF7759L2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
LARGE-CAN
MSL1
Class M4 (+/- 800V)
Moisture Sensitivity Level
Machine Model
(per AEC-Q101-002)
Class H2 (+/- 6000V)
(per AEC-Q101-001)
N/A
Human Body Model
ESD
Charged Device
Model
(per AEC-Q101-005)
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
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3
AUIRF7759L2TR/TR1
1000
1000
100
10
VGS
VGS
15V
TOP
15V
10V
TOP
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
100
10
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
BOTTOM
BOTTOM
1
3.75V
3.75V
60μs
0.1
0.01
PULSE WIDTH
≤
60μs
Tj = 175°C
PULSE WIDTH
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.95
8
6
4
2
0
T = 25°C
A
I
= 96A
D
V
= 7.0V
= 8.0V
GS
1.85
1.75
1.65
V
V
GS
T
= 125°C
J
= 10V
GS
V
= 15V
GS
T
= 25°C
J
15
30
45
60
75
90
105
2
4
6
8
10 12 14 16 18 20
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
100
10
2.5
I
= 96A
V
= 25V
DS
D
V
= 10V
≤
60μs PULSE WIDTH
GS
2.0
1.5
1.0
0.5
T
= 175°C
J
TJ = 25°C
TJ = -40°C
1
0.1
2
2.5
3
3.5
4
4.5
5
5.5
6
-60
-20
20
60
100
140
180
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
4
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AUIRF7759L2TR/TR1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
10
T
= 175°C
J
TJ = 25°C
TJ = -40°C
I
= 1.0A
D
1
ID = 1.0mA
ID = 250μA
V
= 0V
GS
0.1
-75 -50 -25
0
25 50 75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
T , Temperature ( °C )
J
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Threshold Voltage vs.
Fig 8. Typical Source-Drain Diode Forward Voltage
Junction Temperature
600
500
400
300
200
100
0
100000
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
T = 25°C
J
= C + C
ds
gd
C
iss
10000
1000
100
C
oss
T
= 175°C
J
C
rss
V
= 25V
DS
20μs PULSE WIDTH
0
50
100
150
200
250
300
1
10
, Drain-to-Source Voltage (V)
100
I ,Drain-to-Source Current (A)
V
D
DS
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
14
200
I = 96A
D
V
= 60V
= 38V
DS
12
10
8
V
DS
160
120
80
VDS= 15V
6
4
40
2
0
0
0
50
100
150
200
250
300
25
50
75
100
125
150
175
Q , Total Gate Charge (nC)
T
, Case Temperature (°C)
G
C
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRF7759L2TR/TR1
10000
1200
1000
800
600
400
200
0
OPERATION IN THIS AREA LIMITED
I
D
BY R (on)
DS
TOP
15.39A
23.97A
1000
BOTTOM 96A
100
100μsec
DC
1msec
10
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.02
0.01
0.10804
0.61403
0.45202
0.00001
0.000171
0.053914
0.006099
0.036168
τ
τ
J τJ
τ
Cτ
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF7759L2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 14, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
300
250
200
150
100
50
TOP
BOTTOM 1.0% Duty Cycle
= 96A
Single Pulse
I
D
Tjmax (assumed as 25°C in Figure 15, 16).
t
av = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 17. Maximum Avalanche Energy vs. Temperature
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
20K
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 19b. Gate Charge Waveform
Fig 19a. Gate Charge Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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7
AUIRF7759L2TR/TR1
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Automotive DirectFET® Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
www.irf.com
AUIRF7759L2TR/TR1
Automotive DirectFET® Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN MAX
A
B
C
D
E
F
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
0.356 0.360
0.270 0.280
0.232 0.236
0.022 0.026
0.023 0.024
0.046 0.048
0.039 0.040
0.029 0.030
0.015 0.017
0.053 0.057
0.100 0.104
0.211 0.215
0.027 0.029
0.003 0.007
0.001 0.003
G
H
J
K
L
L1
M
P
R
Automotive DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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9
AUIRF7759L2TR/TR1
Automotive DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7759L2TR). For 1000 parts on 7"
reel, order AUIRF7759L2TR1
DIMENSIONS
METRIC
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
IMPERIAL
TR1 OPTION (QTY 1000)
IMPERIAL
METRIC
NOTE: CONTROLLING
DIMENSIONS IN MM
METRIC
CODE
MIN
MIN
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
MAX
12.10
4.10
16.30
7.60
MIN
MIN
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
CODE
MIN
MAX
N.C
MIN
MAX
N.C
MAX
N.C
4.69
A
B
C
D
E
F
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.900
N.C
7.000
0.795
0.331
0.059
2.460
N.C
330.00
20.20
12.80
1.50
177.80
20.20
12.98
1.50
0.154
0.623
0.291
0.283
0.390
0.059
0.059
N.C
N.C
N.C
13.20
N.C
0.520
N.C
13.50
2.50
N.C
7.40
99.00
N.C
62.48
N.C
100.00
22.40
18.40
19.40
3.940
0.880
0.720
0.760
10.10
N.C
N.C
G
H
G
H
0.650
0.630
N.C
16.40
15.90
N.C
N.C
0.063
1.60
0.630
16.00
N.C
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
Starting TJ = 25°C, L = 0.056mH, RG = 25Ω, IAS = 96A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
θ
10
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AUIRF7759L2TR/TR1
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Tape and Reel
Tape and Reel
Quantity
4000
1000
AUIRF7759L2TR
AUIRF7759L2TR1
AUIRF7759L2
DirectFET2 Large Can
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11
AUIRF7759L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod-
ucts and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this informa-
tion with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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