AUIRFR48ZTRR_技术文档

PD - 97586

AUTOMOTIVE GRADE

AUIRFR48Z

HEXFET^®Power MOSFET

Features

●

Advanced Process Technology

D

V_(BR)DSS

55V

11m

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Ω

G

62A

42A

S

Automotive Qualified *

D

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

S

G

D-Pak

AUIRFR48Z

G

Gate

D

Drain

S

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

62

Units

(Silicon Limited)

I

@ T = 25°C

C

D

@ T = 100°C

C

44

A

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

C

42

250

91

DM

P

@T = 25°C

Power Dissipation

C

W

D

Linear Derating Factor

Gate-to-Source Voltage

0.61

± 20

W/°C

V

GS

E_AS

74

110

mJ

Single Pulse Avalanche Energy (Thermally Limited)

E_AS(tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

A

Repetitive Avalanche Energy

E_AR

mJ

T

J

Operating Junction and

-55 to + 175

300

T

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.64

40

Units

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

R_θJC

R_θJA

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

1

11/9/2010

AUIRFR48Z

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

55 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_J

R_DS(on)

V

Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, I_D= 1mA

mΩ

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

8.86

–––

11

4.0

–––

20

V_GS= 10V, I_D= 37A

V_GS(th)

V

S

V_DS= V_GS, I_D= 50µA

V_DS= 25V, I_D= 37A

gfs

I_DSS

Forward Transconductance

120

–––

Drain-to-Source Leakage Current

µA V_DS= 55V, V_GS= 0V

250

200

V

_DS= 55V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA V_GS= 20V

V_GS= -20V

––– -200

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

–––

40

11

15

61

40

35

4.5

60

I_D= 37A

V_DS= 44V

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

nC

V_GS= 10V

V_DD= 28V

I_D= 37A

t_d(off)

t_f

Ω

Turn-Off Delay Time

Fall Time

ns

R

_G= 12

V_GS= 10V

Between lead,

D

S

L_D

Internal Drain Inductance

nH 6mm (0.25in.)

from package

G

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

V_GS= 0V

_DS= 25V

pF ƒ = 1.0MHz

C_iss

Input Capacitance

––– 1720 –––

C_oss

C_rss

C_oss

Output Capacitance

–––

290

160

–––

V

Reverse Transfer Capacitance

Output Capacitance

––– 1000 –––

V

_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

_GS= 0V, V_DS= 44V, ƒ = 1.0MHz

_GS= 0V, V_DS= 0V to 44V

Output Capacitance

–––

230

360

–––

C_osseff.

Effective Output Capacitance

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I

Continuous Source Current

–––

37

MOSFET symbol

S

(Body Diode)

Pulsed Source Current

A

showing the

integral reverse

–––

250

SM

(Body Diode)

p-n junction diode.

V

t

Diode Forward Voltage

–––

20

1.3

40

28

V

T = 25°C, I = 37A, V = 0V

SD

J

S

GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = 37A, V_DD= 28V

J F

rr

di/dt = 100A/µs

Q

t

14

nC

rr

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

on

Notes:

ꢀ Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.11mH

R_G= 25Ω, I_AS= 37A, V_GS=10V. Part not

This value determined from sample failure population,

starting T_J= 25°C, L = 0.11mH, R_G= 25Ω,

I_AS= 37A, V_GS=10V.

recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the same

charging time as C_osswhile V_DSis rising from 0 to

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques

refer to application note #AN-994.

R_θis measured at T_Japproximately 90°C.

80% V_DSS

.

2

www.irf.com

AUIRFR48Z

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by

extension of the higher Automotive level.

Moisture Sensitivity Level

D-PAK

MSL1

Class M4 (425V)

Machine Model

AEC-Q101-002

Class H1B (1000V)

AEC-Q101-001

Class C5 (1125V)

AEC-Q101-005

Yes

Human Body Model

ESD

Charged Device

Model

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

www.irf.com

3

AUIRFR48Z

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

100

10

1

BOTTOM

4.5V

60µs PULSE WIDTH

≤

≤60µs PULSE WIDTH

Tj = 175°C

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

60

50

40

30

20

10

0

T

= 25°C

J

100

10

1

T

= 175°C

J

T

= 175°C

J

T

= 25°C

J

V

= 10V

V

= 25V

DS

380µs PULSE WIDTH

DS

≤

60µs PULSE WIDTH

10 12

, Gate-to-Source Voltage (V)

0.1

2

4

6

8

0

20

40

60

80

I ,Drain-to-Source Current (A)

D

V

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

4

www.irf.com

AUIRFR48Z

10000

1000

100

20

16

12

8

V

= 0V,

= C

f = 1 MHZ

I

= 37A

GS

D

C

+ C , C

SHORTED

iss

gs

gd

ds

V

= 44V

DS

= C

rss

oss

gd

= C + C

VDS= 28V

VDS= 11V

ds

gd

C

iss

C

oss

C

4

rss

0

10

20

30

40

50

60

1

10

100

Q

Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 6. Typical Gate Charge vs.

Fig 5. Typical Capacitance vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000.00

100.00

10.00

1.00

1000

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100

10

1

T

= 175°C

100µsec

J

1msec

10msec

T

= 25°C

J

Tc = 25°C

Tj = 175°C

Single Pulse

DC

V

= 0V

GS

0.1

0.10

1

10

, Drain-toSource Voltage (V)

100

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

, Source-to-Drain Voltage (V)

V

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

nce

Forward Voltage

www.irf.com

5

AUIRFR48Z

2.5

2.0

1.5

1.0

0.5

70

I

= 37A

LIMITED BY PACKAGE

D

V

= 10V

60

50

40

30

20

10

0

GS

25

50

75

100

125

150

175

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

T

, Case Temperature (°C)

C

T

, Junction Temperature (°C)

J

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current vs.

vs.Temperature

CaseTemperature

10

1

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

Ri (°C/W) τi (sec)

0.1

0.01

τ

^Jτ_J

τ

^Cτ

0.7206

0.6009

0.3175

0.000326

0.001810

0.014886

0.02

0.01

τ

¹τ₁

τ

²τ₂

³τ₃

Ci= τi/Ri

/

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6

www.irf.com

AUIRFR48Z

15V

300

250

200

150

100

50

I

D

TOP

4.3A

6.3A

37A

DRIVER

+

L

V

DS

BOTTOM

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

0

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

I

AS

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

vs. Drain Current

Q

G

10 V

Q

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

GS

GD

V

G

Charge

I

= 1.0A

D

Fig 13a. Basic Gate Charge Waveform

= 50µA

= 150µA

= 250µA

= 1.0mA

L

VCC

-75 -50 -25

0

25 50 75 100 125 150 175

DUT

0

T , Temperature ( °C )

1K

J

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

www.irf.com

7

AUIRFR48Z

1000

Duty Cycle = Single Pulse

100

10

1

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆ Tj = 25°C due to

avalanche losses

0.01

0.05

0.10

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

80

60

40

20

0

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

TOP

BOTTOM 1% Duty Cycle

= 37A

Single Pulse

I

D

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

25

50

75

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 16. Maximum Avalanche Energy

vs.Temperature

8

www.irf.com

AUIRFR48Z

Driver Gate Drive

P.W.

D =

Period

D.U.T

Period

+

*

=10V

V

GS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-

10V

PulseWidth ≤ 1 µs

Duty Factor≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 18b. Switching Time Waveforms

www.irf.com

9

AUIRFR48Z

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak Part Marking Information

PartNumber

AUIRFR48Z

DateCode

Y= Year

WW= Work Week

A=Automotive,LeadFree

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

www.irf.com

AUIRFR48Z

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

www.irf.com

11

AUIRFR48Z

Ordering Information

Base part

number

Package Type

Standard Pack

Complete Part Number

Form

Tube

Tape and Reel

Tape and Reel Left

Tape and Reel Right

Quantity

75

2000

3000

AUIRFR48Z

Dpak

AUIRFR48Z

AUIRFR48ZTR

AUIRFR48ZTRL

AUIRFR48ZTRR

12

www.irf.com

AUIRFR48Z

IMPORTANTNOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products

and services at any time and to discontinue any product or services without notice. Part numbers designated with the

“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance

and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time

of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with

IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support

this warranty. Except where mandated by government requirements, testing of all parameters of each product is not

necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration

and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information

with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.

Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product

or service voids all express and any implied warranties for the associated IR product or service and is an unfair and

deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant

into the body, or in other applications intended to support or sustain life, or in any other application in which the failure

of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR

products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design

or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR

products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as

military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR

has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance

with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific

IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the

designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

www.irf.com

13


型号：	AUIRFR48ZTRR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 局域网开关脉冲晶体管
文件：	总13页 (文件大小：292K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFR48ZTRR [INFINEON]

相关型号：

AUIRFR5305

AUIRFR5305TR

AUIRFR540Z

AUIRFR540ZTR

AUIRFR540ZTRL

AUIRFR540ZTRR

AUIRFR5410

AUIRFR5410

AUIRFR5410TR

AUIRFR5410TRL

AUIRFR5410TRR

AUIRFR5505