AUIRFS8408TRR_技术文档

AUIRFS8408

AUIRFSL8408

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

l

Advanced Process Technology

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

40V

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

1.3m

Ω

1.6m

317A

195A

Description

Specifically designed for Automotive applications, this HEXFET®

PowerMOSFETutilizesthelatestprocessingtechniquestoachieve

extremely low on-resistance per silicon area. Additional features

of this design are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating. These

features combine to make this product an extremely efficient and

reliable device for use in Automotive and wide variety of other

applications.

D

S

D

S

D

G

D²Pak

TO-262

Applications

AUIRFSL8408

AUIRFS8408

l

Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

Heavy Loads

SMPS

G

Gate

D

Drain

S

Source

Ordering Information

Base part number

Package Type

Standard Pack

Form

Complete Part Number

Quantity

50

AUIRFSL8408

AUIRFS8408

TO-262

D²Pak

Tube

AUIRFSL8408

AUIRFS8408

50

Tape and Reel Left

Tape and Reel Right

800

AUIRFS8408TRL

AUIRFS8408TRR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Max.

317

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

224

195

A

1270

P_D@T_C= 25°C

294

W

Maximum Power Dissipation

1.96

Linear Derating Factor

W/°C

V

V_GS

T_J

± 20

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

490

800

mJ

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current

See Fig. 14, 15, 24a, 24b

A

Repetitive Avalanche Energy

E_AR

mJ

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.51

40

Units

°C/W

R_θ_JC

Junction-to-Case

R_θ_JA

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

1

www.irf.com

April 25, 2013

AUIRFS/SL8408

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Min.

40

–––

2.2

–––

Typ.

–––

0.032

1.3

Max.

–––

1.6

3.9

1.0

150

100

-100

–––

Units

V

Conditions

V_GS= 0V, I_D= 250μA

Δ

V_(BR)DSS/ T_J

V/°C Reference to 25°C, I_D= 5mA

R_DS(on)

V_GS(th)

I_DSS

V_GS= 10V, I_D= 100A

V_DS= V_GS, I_D= 250μA

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

Ω

m

V

3.0

Drain-to-Source Leakage Current

–––

2.1

μA

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

V

_GS= 20V

nA

V_GS= -20V

Ω

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol Parameter

Forward Transconductance

Min.

211

–––

Typ.

–––

216

51

77

139

29

202

108

119

10820

1540

1140

1880

2208

Max.

–––

324

–––

Units

S

Conditions

V_DS= 10V, I_D= 100A

gfs

Q_g

Total Gate Charge

I_D= 100A

V_DS=20V

V_GS= 10V

Q_gs

Q_gd

Q_sync

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

nC

ns

I_D= 100A, V_DS=0V, V_GS= 10V

V_DD= 26V

Rise Time

I_D= 100A

Ω

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 2.4

V_GS= 10V

V_GS= 0V

V_DS= 25V

C_iss

C_oss

C_rss

C_osseff. (ER)

C_osseff. (TR)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

ƒ = 1.0 MHz, See Fig. 5

V_GS= 0V, V_DS=0V to 32V See Fig. 11

V_GS= 0V, V_DS= 0V to 32V

pF

Diode Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

D

–––

317

(Body Diode)

Pulsed Source Current

showing the

integral reverse

A

G

I_SM

–––

1270

S

(Body Diode)

p-n junction diode.

V_SD

dv/dt

t_rr

Diode Forward Voltage

Peak Diode Recovery

Reverse Recovery Time

–––

0.9

5.0

38

37

50

1.3

–––

V

T_J= 25°C, I_S= 100A, V_GS= 0V

V/ns T_J= 175°C, I_S= 100A, V_DS= 40V

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 34V,

I_F= 100A

di/dt = 100A/μs

ns

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

nC

A

50

1.9

I_RRM

Notes:

Calculated continuous current based on maximum allowable

junction temperature. Bond wire current limit is 195A by source

bonding technology . Note that current limitations arising from

heating of the device leads may occur with some lead mounting

arrangements. (Refer to AN-1140)

ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

.

Repetitive rating; pulse width limited by max. junction temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.099mH, R_G= 50Ω,

I_AS= 100A, V_GS=10V. Part not recommended for use above

this value.

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques

refer to application note #AN-994.

R_θis measured at T_Japproximately 90°C.

Pulse drain current is limited by source bonding technology.

I_SD≤ 100A, di/dt ≤ 1307A/µs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

2

www.irf.com

April 25, 2013

AUIRFS/SL8408

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

1

4.5V

60μs

Tj = 25°C

PULSE WIDTH

≤

60μs

Tj = 175°C

PULSE WIDTH

≤

0.1

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I

= 100A

= 10V

D

V

GS

T

= 175°C

J

T = 25°C

J

1

V

= 10V

DS

≤

60μs PULSE WIDTH

0.1

2

4

6

8

10

-60

-20

20

60

100

140

180

T , Junction Temperature (°C)

J

V

, Gate-to-Source Voltage (V)

GS

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

1000000

100000

10000

1000

14.0

V

= 0V,

= C

f = 1 MHZ

GS

C

+ C , C

SHORTED

ds

I = 100A

D

iss

gs

gd

= C

12.0

rss

oss

gd

V

= 32V

= 20V

= C + C

DS

ds

gd

10.0

8.0

6.0

4.0

2.0

0.0

C

iss

C

oss

rss

100

0.1

1

10

100

0

50

100

150

200

250

300

V

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

DS

G

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

3

April 25, 2013

AUIRFS/SL8408

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

T

= 175°C

J

100μsec

1msec

Limited By Package

T

= 25°C

J

10msec

DC

1

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

1

10

100

0.0

0.5

1.0

1.5

2.0

2.5

V

, Drain-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

350

300

250

200

150

100

50

49

48

47

46

45

44

43

42

41

40

Id = 5.0mA

Limited By Package

0

25

50

75

100

125

150

175

-60

-20

20

60

100

140

180

T

, Case Temperature (°C)

T , Temperature ( °C )

C

J

Fig 9. Maximum Drain Current vs.

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

2500

2000

1500

1000

500

I

D

TOP

25A

52A

BOTTOM 100A

0

-5

0

5

10 15 20 25 30 35 40 45

Drain-to-Source Voltage (V)

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

V

J

DS,

Fig 11. Typical C_OSSStored Energy

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4

April 25, 2013

AUIRFS/SL8408

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

0.0001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

600

500

400

300

200

100

0

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

I

D

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

25

50

75

100

125

150

175

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 15. Maximum Avalanche Energy vs. Temperature

5

April 25, 2013

AUIRFS/SL8408

4.5

3.5

2.5

1.5

0.5

5

4

3

2

1

0

I

= 100A

D

T

= 125°C

J

ID = 250μA

ID = 1.0mA

ID = 1.0A

= 25°C

2

4

6

8

10 12 14 16 18 20

-75

-25

25

75

125

175

225

T , Temperature ( °C )

J

V

Gate -to -Source Voltage (V)

GS,

Fig 16. On-Resistance vs. Gate Voltage

Fig 17. Threshold Voltage vs. Temperature

10

240

220

200

180

160

140

120

100

80

I = 60A

F

V

= 34V

V

= 34V

R

8

6

4

2

0

T = 25°C

J

T = 125°C

J

T = 125°C

J

60

40

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 19 - Typical Stored Charge vs. di_f/dt

Fig. 18 - Typical Recovery Current vs. di_f/dt

10

8

200

160

120

80

I = 100A

F

I = 100A

F

V

= 34V

V

= 34V

R

T = 25°C

J

T = 125°C

J

T = 125°C

J

6

4

2

40

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 21 - Typical Stored Charge vs. di_f/dt

Fig. 20 - Typical Recovery Current vs. di_f/dt

6

April 25, 2013

AUIRFS/SL8408

20.0

15.0

10.0

5.0

V

= 6.0V

GS

V

= 5.5V

GS

VGS = 7.0V

VGS = 8.0V

VGS = 10V

0.0

0

100

200

300

400

500

I , Drain Current (A)

D

Fig 22. Typical On-Resistance vs. Drain Current

7

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April 25, 2013

AUIRFS/SL8408

Driver Gate Drive

P.W.

D =

Period

D.U.T

Period

+

*

=10V

V

GS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

InductorCurrent

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

I

AS

Fig 24b. Unclamped Inductive Waveforms

Fig 24a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

PulseWidth ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 25a. Switching Time Test Circuit

Fig 25b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 26a. Gate Charge Test Circuit

Fig 26b. Gate Charge Waveform

8

April 25, 2013

AUIRFS/SL8408

D²Pak Package Outline (Dimensions are shown in millimeters (inches))

D²Pak Part Marking Information

PartNumber

AUIRFS8408

DateCode

Y= Year

WW= Work Week

A= Automotive, Lead Free

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

9

www.irf.com

April 25, 2013

AUIRFS/SL8408

TO-262 Package Outline ( ^{Dimensions are shown in millimeters (inches))}

TO-262 Part Marking Information

PartNumber

AUIRFSL8408

DateCode

Y= Year

WW= Work Week

IRLogo

YWWA

A= Automotive, Lead Free

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

www.irf.com

April 25, 2013

AUIRFS/SL8408

D²Pak (TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

11.60 (.457)

11.40 (.449)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

4

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

4

3

11

www.irf.com

April 25, 2013

AUIRFS/SL8408

Qualification Information^†

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification. IR’s Industrial

and Consumer qualification level is granted by extension of the higher

Automotive level.

3L-D²PAK

MSL1

Moisture Sensitivity Level

3L-TO-262-PAK

N/A

Class M4 (+/- 600)^††

Machine Model

AEC-Q101-002

Class H3A (+/- 6000)^††

AEC-Q101-001

Human Body Model

ESD

Class C5 (+/- 2000)^††

AEC-Q101-005

Charged Device Model

RoHS Compliant

Yes

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Highest passing voltage.

12

www.irf.com

April 25, 2013

AUIRFS/SL8408

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IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts

are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU.

Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be

responsible for any failure to meet such requirements.

For technical support, please contact IRs Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

101N.SepulvedaBlvd.,ElSegundo,California90245

Tel:(310)252-7105

13

www.irf.com

April 25, 2013


型号：	AUIRFS8408TRR
厂家：	Infineon
描述：	NEW ULTRA LOW ON-RESISTANCE 新的超低导通电阻
文件：	总13页 (文件大小：297K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFS8408TRR [INFINEON]

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