AUIRGDC0250 [INFINEON]
汽车低 VCEon 分立 IGBT，采用Super TO-220 封装;
| 型号： | AUIRGDC0250 |
| 厂家： | 
Infineon |
| 描述： | 汽车低 VCEon 分立 IGBT，采用Super TO-220 封装 双极性晶体管 |
| 文件： | 总10页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRGDC0250
Features
C
Low VCE (on) Planar IGBT Technology
VCES = 1200V
Low Switching Losses
Square RBSOA
IC = 81A @ TC = 100°C
G
100% of the Parts Tested for ILM
Positive VCE (on) Temperature Coefficient
Reflow Capable per JDSD22-A113
Lead-Free, RoHS Compliant
Automotive Qualified *
VCE(on) typ. = 1.47V @ 33A
E
n-channel
Benefits
Device optimized for soft switching applications
High Efficiency due to Low VCE(on), low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
Super-TO-220
AUIRGDC0250
G
Gate
C
E
Application
PTC Heater
Collector
Emitter
Relay Replacement
Standard Pack
Form Quantity
Tube 50
Base Part Number
Package Type
Orderable Part Number
AUIRGDC0250
Super-TO-220
AUIRGDC0250
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
Max.
1200
141
81
Units
V
VCES
A
ICM
ILM
VGE
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
99
99
±20
±30
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
543
217
W
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Typ.
Max. Units
Thermal Resistance Junction-to-Case (each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
0.23
–––
62
RJC (IGBT)
RCS
RJA
0.50
–––
°C/W
* Qualification standards can be found at www.infineon.com
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AUIRGDC0250
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200
—
—
V
VGE = 0V, IC = 250µA
—
—
1.2
1.47
1.56
—
—
1.8
—
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
V(BR)CES/TJ
IC = 33A, VGE = 15V, TJ = 25°C
VCE(on)
V
—
IC = 33A, VGE = 15V, TJ = 150°C
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
3.0
6.0
V
VCE = VGE, IC = 250µA
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
—
-15
30
—
—
—
mV/°C VCE = VGE, IC = 250µA (25°C-150°C)
S
VCE = 50V, IC = 33A,PW = 20µS
GE = 0V, VCE = 1200V, TJ = 25°C
ICES
Collector-to-Emitter Leakage Current
250
1000
V
µA
—
VGE = 0V, VCE = 1200V,TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 33A
VGE = 15V
Qg
Qge
Qgc
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
—
—
—
151
26
62
227
39
93
nC
mJ
ns
VCC = 600V
Eoff
td(off)
tf
Turn-Off Switching Loss
Turn-Off delay time
—
—
15
16
IC = 33A, VCC = 600V, VGE = 15V
RG = 5, L = 400µH, TJ = 25°C
Energy losses include tail
485
616
Fall time
—
—
—
—
—
—
—
1193 1371
Eoff
td(off)
tf
Turn-Off Switching Loss
Turn-Off delay time
Fall time
29
689
2462
3804
161
31
—
—
—
—
—
—
mJ
ns
IC = 33A, VCC = 600V, VGE = 15V
RG = 5, L = 400µH, TJ = 150°C
Energy losses include tail
VGE = 0V
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCC = 30V
pF
f = 1.0Mhz
TJ = 150°C, IC = 99A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 960V, Vp ≤ 1200V
Rg = 5, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 5.
Pulse width limited by max. junction temperature.
R is measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
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AUIRGDC0250
160
140
120
100
80
600
500
400
300
200
100
0
60
40
20
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 2 - Power Dissipation vs.
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
5.0
4.5
4.0
3.5
3.0
I
= 1mA
C
100
10µsec
10
100µsec
1msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
(V)
1000
10000
25
50
75
T , Temperature (°C)
J
100
125
150
V
CE
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ 150°C; VGE =15V
100
80
60
40
20
0
1000
100
10
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
1
0
2
4
6
8
10
10
100
1000
10000
V
(V)
V
(V)
CE
CE
Fig. 5 - Reverse Bias SOA
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 150°C; VGE = 20V
TJ = -40°C; tp = 20µs
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AUIRGDC0250
100
80
60
40
20
0
100
80
60
40
20
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
TJ = 25°C; tp =20µs
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
I
I
I
= 17A
= 33A
= 66A
CE
CE
CE
I
I
I
= 17A
= 33A
= 66A
CE
CE
CE
5
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
100
80
60
40
20
0
8
7
6
5
4
3
2
1
0
I
I
I
= 17A
= 33A
= 66A
CE
CE
CE
T
= 25°C
J
T
= 150°C
J
5
10
15
20
4
5
6
7
8
9
10
11
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 150°C
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AUIRGDC0250
50
45
40
35
30
25
20
15
10
10000
1000
100
t
F
E
OFF
td
OFF
0
10
20
30
40
(A)
50
60
70
0
20
40
(A)
60
80
I
C
I
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V
TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V
32
10000
t
30
F
E
OFF
28
26
24
1000
td
OFF
100
0
20
40
60
80
100
0
20
40
60
()
80
100
R
Rg ()
G
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V
16
10000
V
V
= 600V
= 400V
14
12
10
8
Cies
CES
CES
1000
100
Coes
6
4
10
1
Cres
2
0
0
20 40 60 80 100 120 140 160
, Total Gate Charge (nC)
0
100
200
300
(V)
400
500
600
Q
G
V
CE
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 33A; L = 2.0mH
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AUIRGDC0250
1
0.1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
I (sec)
0.0015
0.0365
0.1356
0.0554
0.000003
0.000118
0.001438
0.006412
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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AUIRGDC0250
L
L
80 V
+
-
DUT
VCC
VCC
DUT
0
Rg
1K
RBSOA Circuit
Gate Charge Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
DUT /
DRIVER
VCC
Rg
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
700
70
60
50
40
30
20
10
0
tf
600
500
400
300
200
100
0
90% ICE
5% VCE
10% ICE
Eoff Loss
-100
-10
-2
0
2
4
6
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
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AUIRGDC0250
Super-TO-220 Package Outline
Dimensions are shown in millimeters (inches)
Super-TO-220 Part Marking Information
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AUIRGDC0250
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number (s) passed Automotive qualification.
Infineon’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
3L– Super TO-220
MSL1
Class M4†(+/- 800V)
Moisture Sensitivity Level
Machine Model
AEC-Q101-002
Class H3A†(+/- 6000V)
AEC-Q101-001
Class C5†(+/- 2000V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device Model
RoHS Compliant
†
Highest passing voltage.
Revision History
Revision
2.0
Date
Subjects (major changes since last revision)
Final Datasheet
9/2/2014
12/1/2014
3/2/2015
2.1
Updated with V(BR)CES and VGE(th) conditions
Updated with minor changes
2.2
2.3
2.4
2.5
8/31/2017
03/01/2018
11/06/2018
Updated with Infineon logo
Updated with qualification level
Updated maximum VCE(on)
2.6
4/18/2019
Updated typical Vce(on) value @ 150°C
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AUIRGDC0250
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2018
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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