AUIRGS4062D1TRR [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE;
| 型号： | AUIRGS4062D1TRR |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 软恢复二极管 快速软恢复二极管 栅 |
| 文件： | 总14页 (文件大小：647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5µs short circuit SOA
Square RBSOA
VCES = 600V
IC(Nominal) = 24A
tSC 5µs, TJ(max) = 175°C
100% of the parts tested for ILM
VCE(on) typ. = 1.57V
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
C
C
C
Automotive Qualified *
E
C
E
E
G
Benefits
C
C
G
G
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
AUIRGS4062D1
D2Pak
AUIRGSL4062D1
TO-262Pak
AUIRGB4062D1
TO-220AB
G
C
E
Gate
Collector
Emitter
Applications
Air Conditioning Compressor
Standard Pack
Form
Tube
Tube
Tube
Base Part Number
Package Type
Orderable Part Number
Quantity
AUIRGB4062D1
AUIRGSL4062D1
TO-220
TO-262
50
50
50
800
800
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
AUIRGS4062D1TRL
AUIRGS4062D1TRR
AUIRGS4062D1
D2 Pak
Tape and Reel Left
Tape and Reel Right
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated condi-
tions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Max.
600
59
Units
VCES
IC @ TC = 25°C
V
IC @ TC = 100°C
Continuous Collector Current
39
IC (Nominal)
Nominal Current
24
ICM
ILM
Pulse Collector Current VGE =15V
Clamped Inductive Load Current VGE =20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
72
96
59
39
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
96
±20
±30
246
123
-55 to +175
V
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
TJ
TSTG
W
°C
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Thermal Resistance Junction-to-Case (IGBT)
–––
–––
0.61
RJC (IGBT)
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
–––
–––
0.50
62
1.2
–––
–––
RJC (Diode)
RCS
RJA
°C/W
* Qualification standards can be found at www.infineon.com
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AUIRGB/S/SL4062D1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.3
1.57 1.77
1.87
1.94
—
-17
12
—
—
V
VGE = 0V, IC = 100µA
V(BR)CES
V/°C VGE = 0V, IC = 10mA (25°C-175°C)
IC = 24A, VGE = 15V, TJ = 25°C
V(BR)CES/TJ
—
—
IC = 24A, VGE = 15V, TJ = 150°C
IC = 24A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 700µA
VCE(on)
Collector-to-Emitter Saturation Voltage
V
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
6.5
—
V
VGE(th)
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
VGE(th)/TJ
gfe
—
25
—
S
VCE = 50V, IC = 24A,PW = 20µs
Collector-to-Emitter Leakage Current
1.0
3.5
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V,TJ = 175°C
IF = 24A
µA
mA
ICES
1.57
1.40
1.47
—
—
—
IF = 19A
VFM
IGES
Diode Forward Voltage Drop
V
—
IF = 24A, TJ = 175°C
Gate-to-Emitter Leakage Current
—
±100
nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
—
Typ.
51
Max.
Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
77
21
IC = 24A
VGE = 15V
VCC = 400V
Qge
Qgc
Eon
Eoff
—
14
nC
—
21
32
—
532
311
754
526
—
J
IC = 24A, VCC = 400V,
Etotal
td(on)
tr
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
843
19
1280
36
41
109
40
—
VGE = +15V,RG = 10,
24
L = 210H, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
J
ns
pF
td(off)
tf
Turn-Off delay time
Fall time
90
23
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
726
549
1275
12
—
IC = 24A, VCC = 400V,
VGE = +15V,RG = 10,
L = 210H, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
—
—
23
—
td(off)
tf
Turn-Off delay time
Fall time
92
—
84
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1487
118
44
—
VCC = 30V
—
f = 1.0Mhz
—
TJ = 175°C, IC = 96A
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
VCC = 480V, Vp ≤ 600V
Rg = 10, VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
Rg = 10, VGE = +15V to 0V
TJ = 175°C
5
—
—
—
s
—
—
—
773
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
J
ns
A
VCC = 400V,IF = 24A,VGE = 15V,
102
32
—
—
RG = 10, L = 210H
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 210µH, RG = 50.
Pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
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2017-08-31
AUIRGB/S/SL4062D1
300
250
200
150
100
50
70
60
50
40
30
20
10
0
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs.
Case Temperature
Case Temperature
1000
100
10
100
10µsec
100µsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
(V)
1000
1
10
100
1000
V
V
(V)
CE
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
TJ = 175°C; VGE =20V
100
90
80
70
60
50
40
30
20
10
0
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
80
60
40
20
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
V
(V)
CE
V
(V)
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
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2017-08-31
AUIRGB/S/SL4062D1
100
80
60
40
20
0
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
T
= -40°C
J
T
= 25°C
=175°C
J
T
J
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 20µs
TJ = 175°C; tp = 20µs
8
8
6
4
2
0
6
4
2
0
I
I
I
= 12A
= 24A
= 48A
CE
CE
CE
I
I
I
= 12A
= 24A
= 48A
CE
CE
CE
5
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
100
8
6
4
2
0
T
T
= 25°C
J
J
80
60
40
20
0
= 175°C
I
I
I
= 12A
= 24A
= 48A
CE
CE
CE
2
4
6
8
10
12
14
16
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
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2017-08-31
AUIRGB/S/SL4062D1
1000
100
10
2500
2000
1500
1000
500
td
t
OFF
E
ON
F
t
R
td
ON
E
OFF
0
1
0
10
20
30
40
50
0
10
20
30
40
50
I (A)
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
1000
2000
td
1600
OFF
E
ON
100
t
F
1200
t
R
E
OFF
800
400
0
10
td
ON
1
0
20
40
60
80
100
120
0
20
40
60
()
80
100
R
)
R
(
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 24A; VGE = 15V
35
35
30
R
10
30
25
20
15
10
G =
25
20
15
10
5
R
R
22
47
G =
R
G =
100
G =
10 15 20 25 30 35 40 45 50
(A)
0
20
40
60
(
80
100
I
F
R
G
Fig. 18 Typ. Diode IRR vs. RG
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
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2017-08-31
AUIRGB/S/SL4062D1
6000
5000
4000
3000
2000
1000
35
30
25
20
15
48A
24A
12A
200
400
600
800
1000
1200
0
200
400
600
800 1000 1200
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
250
200
150
100
50
2000
16
12
8
1500
R
= 10
G
I
sc
R
= 22
T
G
sc
1000
500
0
R
= 47
G
R
= 100
G
4
0
8
10
12
14
(V)
16
18
10
20
30
(A)
40
50
V
I
GE
F
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
16
14
12
10
8
10000
1000
100
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
Cres
4
2
0
10
0
10
20
30
40
50
60
0
100
200
V
300
(V)
400
500
Q
, Total Gate Charge (nC)
G
CE
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 24A; L = 585µH
VGE= 0V; f = 1MHz
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2017-08-31
AUIRGB/S/SL4062D1
1
D = 0.50
0.20
0.10
0.05
0.1
Ri (°C/W)
i (sec)
0.00003
0.00007
0.00209
0.01166
0.0347
0.1519
0.2531
0.1721
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
i (sec)
0.00003
0.00028
0.00353
0.01971
0.1
0.01
0.0296
0.4307
0.4840
0.2576
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
2017-08-31
AUIRGB/S/SL4062D1
L
80 V
+
-
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
8
2017-08-31
AUIRGB/S/SL4062D1
600
500
400
300
200
100
0
60
600
500
400
300
200
100
0
60
50
40
30
20
10
0
tr
tf
50
40
TEST
CURRENT
30
90% ICE
90% ICE
20
10
0
5% VCE
10% ICE
10% ICE
5% VCE
Eon Loss
0.45
Eoff Loss
-100
-10
-100
-10
-0.3
-0.05
0.2
0.7
-0.3
-0.05
0.2
time(µs)
0.45
0.7
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
400
300
200
100
0
500
400
300
200
100
0
35
QRR
VCE
28
21
14
7
tRR
ICE
0
-7
Peak
IRR
-14
-21
-28
-35
-100
-100
-0.25
0.00
0.25
0.50
-2
0
2
4
6
8
Time (uS)
time (µS)
Fig. WF4 - Typ. S.C. Waveform
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
9
2017-08-31
AUIRGB/S/SL4062D1
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRGB4062D1
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
IR Logo
Lot Code
TO-220AC package is not recommended for Surface Mount Application.
10
2017-08-31
AUIRGB/S/SL4062D1
D2 Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D2 Pak (TO-263AB) Part Marking Information
Part Number
AUIRGS4062D1
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
IR Logo
Lot Code
11
2017-08-31
AUIRGB/S/SL4062D1
TO-262 Package Outline
(Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRGSL4062D1
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
IR Logo
Lot Code
12
2017-08-31
AUIRGB/S/SL4062D1
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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AUIRGB/S/SL4062D1
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
3L-TO-220
N/A
3L-TO-262
Moisture Sensitivity Level
3L-D2 PAK
MSL1
Class M4(+/‐ 700V)†
AEC-Q101-002
Machine Model
Class H1C(+/‐ 2000V)†
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/‐ 2000V)†
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
†
Highest passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected part marking on pages 10,11, 12
8/31/2017
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
14
2017-08-31
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INFINEON
AUIRL1404STRL
Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRL1404STRR
Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRL1404ZL
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
INFINEON
AUIRL1404ZS
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRL1404ZSTRL
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRL1404ZSTRR
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
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