BAR50-03W-E6433 [INFINEON]
Pin Diode, 50V V(BR),;
| 型号： | BAR50-03W-E6433 |
| 厂家： | 
Infineon |
| 描述： | Pin Diode, 50V V(BR), 测试 二极管 |
| 文件： | 总12页 (文件大小：977K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAR50...
Silicon PIN Diodes
• Current-controlled RF resistor
for switching and attenuating applications
• Frequency range above 10 MHz up to 6 GHz
• Especially useful as antenna switch
in mobile communication
• Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
• Low forward resistance
• Very low harmonic distortion
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAR50-02L
BAR50-02V
BAR50-03W
1
2
Type
Package
TSLP-2-1
SC79
Configuration
single, leadless
single
L (nH) Marking
S
BAR50-02L*
BAR50-02V
BAR50-03W
1
0.4
0.6
1.8
AB
a
SOD323
single
blue A
*BAR50-02L is not qualified according AEC Q101
2011-07-18
1
BAR50...
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Diode reverse voltage
Forward current
Symbol
Value
50
100
Unit
V
mA
mW
V
R
I
F
Total power dissipation
P
tot
BAR50-02L, T ≤ 130°C
250
250
250
S
BAR50-02V, T ≤ 120°C
S
BAR50-03W, T ≤ 115°C
S
150
°C
Junction temperature
T
j
Operating temperature range
Storage temperature
T
T
-55 ... 125
-55 ... 150
op
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
R
thJS
Value
Unit
K/W
1)
BAR50-02L
BAR50-02V
BAR50-03W
≤ 80
≤ 120
≤ 140
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
-
-
-
50
1.1
Reverse current
I
nA
V
R
V = 50 V
R
0.95
Forward voltage
V
F
I = 50 mA
F
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2011-07-18
2
BAR50...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
-
-
-
-
-
0.24
0.2
0.2
0.1
0.15
0.5
0.4
-
-
-
R
V = 5 V, f = 1 MHz
R
V = 0 V, f = 100 MHz
R
V = 0 V, f = 1...1.8 GHz, BAR50-02L
R
V = 0 V, f = 1...1.8 GHz, all other
R
Reverse parallel resistance
R
kΩ
Ω
P
V = 0 V, f = 100 MHz
-
-
-
25
6
5
-
-
-
R
V = 0 V, f = 1 GHz
R
V = 0 V, f = 1.8 GHz
R
Forward resistance
r
f
I = 0.5 mA, f = 100 MHz
-
-
-
25
16.5
3
40
25
4.5
F
I = 1 mA, f = 100 MHz
F
I = 10 mA, f = 100 MHz
F
-
1100
-
ns
Charge carrier life time
τ
rr
I = 10 mA, I = 6 mA, measured at I = 3 mA,
F
R
R
R = 100 Ω
L
I-region width
W
I
L
-
56
-
µm
dB
I
1)
Insertion loss
I = 3 mA, f = 1.8 GHz
-
-
-
0.56
0.4
0.27
-
-
-
F
I = 5 mA, f = 1.8 GHz
F
I = 10 mA, f = 1.8 GHz
F
1)
Isolation
I
SO
V = 0 V, f = 0.9 GHz
-
-
-
-
24.5
20
18
-
-
-
-
R
V = 0 V, f = 1.8 GHz
R
V = 0 V, f = 2.45 GHz
R
V = 0 V, f = 5.6 GHz
12
R
1BAR50-02L in series configuration, Z = 50 Ω
2011-07-18
3
BAR50...
Diode capacitance C = ƒ (V )
Reverse parallel resistance R = ƒ(V )
T
R
P
R
f = Parameter
f = Parameter
10 3
0.5
pF
KOhm
10 2
0.4
0.35
0.3
100 MHz
1 GHz
1.8 GHz
10 1
10 0
10 -1
1 MHz
100 MHz
1 GHz
0.25
0.2
1.8 GHz
0.15
0.1
V
V
0
2
4
6
8
10 12 14 16
20
0
2
4
6
8
10 12 14 16
20
V
V
R
R
Forward resistance r = ƒ (I )
Forward current I = ƒ (V )
f
F
F
F
f = 100 MHz
T = Parameter
A
10 4
10 0
A
Ohm
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
10 3
10 2
10 1
10 0
-40 °C
25 °C
85 °C
125 °C
10 -1
10 -2
10 -1
10 0
10 1
10 2
0
0.2
0.4
0.6
0.8
1.2
mA
V
I
V
F
F
2011-07-18
4
BAR50...
Forward current I = ƒ (T )
Forward current I = ƒ (T )
F S
F
S
BAR50-02L
BAR50-02V
120
mA
120
mA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
°C
C°
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Forward current I = ƒ (T )
Permissible Pulse Load R
= ƒ (t )
F
S
thJS
p
BAR50-03W
BAR50-02L
10 2
120
mA
100
90
80
70
60
50
40
30
20
10
0
mA
D = 0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
C°
°C
0
15 30 45 60 75 90 105 120
150
t
TS
p
2011-07-18
5
BAR50...
Permissible Pulse Load
Permissible Pulse Load R
= ƒ (t )
thJS
p
I
/ I
= ƒ (t )
BAR50-02V
Fmax FDC
BAR50-02L
10 1
p
10 3
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
0.5
0.2
mA
0.2
10 1
10 0
10 -1
0.5
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
t
t
p
p
Permissible Pulse Load
Permissible Pulse Load R
= ƒ (t )
thJS
p
I
/ I
= ƒ (t )
BAR50-03W
Fmax FDC
BAR50-02V
10 1
p
10 3
10 2
0
0.005
0.01
0.02
0.05
0.1
0.5
10 1
0.2
0.1
0.05
0.02
0.01
0.2
0.5
0.005
10 0
0
10 0
10 -1
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-07-18
6
BAR50...
2
Permissible Pulse Load
/ I = ƒ (t )
Insertion loss I = -|S | = ƒ(f)
L 21
I
I = Parameter
Fmax FDC
p
F
BAR50-03W
BAR50-02L in series configuration, Z = 50Ω
10 1
0
dB
100 mA
-0.2
10 mA
-0.3
0
0.005
0.1
0.2
0.5
1
5 mA
-0.4
-0.5
3 mA
2
5
-0.6
-0.7
10 0
-0.8
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
0
1
2
3
4
6
s
GHz
t
f
p
2
Isolation I = -|S | = ƒ(f)
SO
21
V = Parameter
R
BAR50-02L in series configuration, Z = 50Ω
0
dB
-10
-15
-20
0 V
-25
-30
1 V
10 V
GHz
0
1
2
3
4
6
f
2011-07-18
7
Package SC79
BAR50...
2011-07-18
8
BAR50...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
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08
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10
11
12
a
b
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q
r
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J
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Q
R
S
T
U
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X
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Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
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G
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J
P
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4
a
b
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f
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r
A
B
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E
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l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2011-07-18
9
Package SOD323
BAR50...
2011-07-18
10
Package TSLP-2-1
BAR50...
2011-07-18
11
BAR50...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-07-18
12
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