BAR65-02V-E6433 [INFINEON]
Pin Diode,;型号: | BAR65-02V-E6433 |
厂家: | Infineon |
描述: | Pin Diode, 测试 二极管 |
文件: | 总12页 (文件大小:975K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAR65...
Silicon PIN Diode
• Series diode for mobile communication in
low loss transmit-receiver switches
• Band switch for TV-tuners
• Very low forward resistance (typ. 0.65 Ω @ 5 mA)
• Low capacitance (typ. 0.5 pF @ 0V)
• Fast switching applications
• Pb-free (RoHS compliant) package
BAR65-02L
BAR65-02V
BAR65-03W
1
2
Type
Package
TSLP-2-1
SC79
Configuration
single, leadless
single
L (nH) Marking
S
BAR65-02L*
BAR65-02V
BAR65-03W
0.4
0.6
1.8
NN
N
SOD323
single
blue M
* Preliminary Data
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
30
100
V
mA
mW
Diode reverse voltage
Forward current
Total power dissipation
V
R
I
F
P
tot
BAR65-02L, T ≤ 128°C
250
250
250
S
BAR65-02V, T ≤ 118°C
S
BAR65-03W, T ≤ 113°C
S
150
°C
Junction temperature
T
j
Operating temperature range
Storage temperature
T
T
-55 ... 125
-55 ... 150
op
2011-06-14
1
BAR65...
Thermal Resistance
Parameter
Junction - soldering point
BAR65-02L
BAR65-02V
BAR65-03W
Symbol
R
thJS
Value
Unit
K/W
1)
≤ 90
≤ 130
≤ 145
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
-
20
Reverse current
I
nA
V
R
V = 20 V
R
0.93
1
Forward voltage
V
F
I = 100 mA
F
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
2011-06-14
2
BAR65...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
-
-
-
0.45
0.4
0.5
0.9
0.8
-
R
V = 3 V, f = 1 MHz
R
V = 0 V, f = 100 MHz ... 1.8 GHz
R
Reverse parallel resistance
R
kΩ
Ω
P
V = 0 V, f = 100 MHz
-
-
-
700
10
5
-
-
-
R
V = 0 V, f = 1 GHz
R
V = 0 V, f = 1.8 GHz
R
Forward resistance
r
f
I = 1 mA, f = 100 MHz
-
-
-
1
0.65
0.56
-
F
I = 5 mA, f = 100 MHz
0.95
0.9
F
I = 10 mA, f = 100 MHz
F
-
80
-
ns
Charge carrier life time
τ
rr
I = 10 mA, I = 6 mA, measured at I = 3 mA,
F
R
R
R = 100 Ω
L
I-region width
W
I
L
-
3.5
-
µm
dB
I
1)
Insertion loss
I = 1 mA, f = 1.8 GHz
-
-
-
0.08
0.06
0.05
-
-
-
F
I = 5 mA, f = 1.8 GHz
F
I = 10 mA, f = 1.8 GHz
F
1)
Isolation
I
SO
V = 0 V, f = 0.9 GHz
-
-
-
12
7
5
-
-
-
R
V = 0 V, f = 1.8 GHz
R
V = 0 V, f = 2.45 GHz
R
1
BAR65-02L in series configuration, Z = 50Ω
2011-06-14
3
BAR65...
Diode capacitance C = ƒ (V )
Reverse parallel resistance R = ƒ(V )
P R
T
R
f = Parameter
f = Parameter
10 4
0.5
F
KOhm
100 MHz
10 3
10 2
10 1
10 0
10 -1
1 MHz ... 1.8 GHz
0.4
0.35
0.3
1 GHz
1.8 GHz
0.25
0.2
0.15
0.1
V
V
0
2
4
6
8
10 12 14 16
20
0
2
4
6
8
10 12 14 16
20
VR
VR
Forward resistance r = ƒ (I )
Forward current I = ƒ (V )
f
F
F
F
f = 100MHz
T = Parameter
A
10 1
10 0
A
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
Ohm
10 0
-40 °C
25 °C
85 °C
125 °C
10 -1
10 -2
10 -1
10 0
10 1
10 2
0
0.2
0.4
0.6
0.8
1.2
mA
V
I
V
F
F
2011-06-14
4
BAR65...
Forward current I = ƒ (T )
Forward current I = ƒ (T )
F S
F
S
BAR65-02L
BAR65-02V
120
mA
120
mA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Forward current I = ƒ (T )
F
S
BAR65-03W
120
mA
100
90
80
70
60
50
40
30
20
10
0
°C
0
15 30 45 60 75 90 105 120
150
T
S
2011-06-14
5
BAR65...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
thJS
p
BAR65-02L
I
/ I
= ƒ (t )
Fmax FDC
BAR65-02L
10 1
p
10 2
K/W
D = 0
0.005
0.01
0.02
0.05
0.1
-
10 1
0.5
0.2
0.2
0.5
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
thJS
p
BAR65-02V
I
/ I
= ƒ (t )
Fmax FDC
BAR65-02V
10 2
p
10 3
10 2
D = 0
0,005
0,01
0,02
0,05
0,1
10 1
D = 0,5
0,2
10 1
0,2
0,1
0,5
0,05
0,02
0,01
0,005
0
10 0
10 0
10 -6
10 -5
10 -4
10
10 2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
T
T
S
S
2011-06-14
6
BAR65...
Permissible Puls Load R
BAR65-03W
= ƒ (t )
Permissible Pulse Load
I / I = ƒ (t )
Fmax FDC
thJS
p
p
BAR65-03W
10 1
10 3
mA
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
mA
0.5
0.2
10 1
0.1
0.2
0.05
0.5
0.02
0.01
0.005
D = 0
10 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
°C
°C
t
t
p
p
2
2
Insertion loss I = -|S | = ƒ(f)
Isolation I = -|S | = ƒ(f)
L
21
SO
21
I = Parameter
V = Parameter
F
R
BAR65-02L in series configuration, Z = 50Ω
BAR65-02L in series configuration Z = 50Ω
0
0
dB
dB
-0.1
-10
-0.15
10 mA
5 mA
-0.2
-0.25
-0.3
-15
0 V
1 V
1 mA
10 V
0.1 mA
-20
-25
-0.35
-0.4
-30
GHz
GHz
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
3
f
f
2011-06-14
7
Package SC79
BAR65...
2011-06-14
8
BAR65...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2011-06-14
9
Package SOD323
BAR65...
2011-06-14
10
Package TSLP-2-1
BAR65...
2011-06-14
11
BAR65...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-06-14
12
相关型号:
BAR65-02W
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
INFINEON
BAR65-03
Preliminary data Silicon RF Switching Diode (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
INFINEON
BAR65-03W
Preliminary data Silicon RF Switching Diode (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
INFINEON
BAR65-07
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners)
INFINEON
©2020 ICPDF网 联系我们和版权申明