BAS28E6327XT [INFINEON]
Rectifier Diode, 2 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, SOT143-4-1, 4 PIN;
| 型号： | BAS28E6327XT |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 2 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, SOT143-4-1, 4 PIN 光电二极管 |
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS28...
Silicon Switching Diode
• For high-speed switching applications
• Electrical insulated diodes
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAS28/W
4
3
D
1
D
2
1
2
Type
Package
Configuration
Marking
BAS28
SOT143
SOT343
parallel pair
parallel pair
JTs
JTs
BAS28W
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
80
Unit
V
Diode reverse voltage
Peak reverse voltage
Forward current
V
V
R
85
RM
200
mA
I
I
I
I
F
Peak forward current
-
4.5
-
FM
Surge forward current, t = 1 µs
Non-repetitive peak surge forward current
Total power dissipation
A
FS
FSM
mW
P
tot
BAS28, T ≤ 31°C
330
250
S
BAS28W, T ≤ 103°C
S
150
°C
Junction temperature
Storage temperature
T
T
j
-55 ... 150
stg
1Pb-containing package may be available upon special request
2007-04-19
1
BAS28...
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
BAS28
R
thJS
≤ 360
≤ 190
BAS28W
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
= 100 µA
(BR)
Reverse current
V = 75 V
I
µA
R
-
-
-
-
-
-
0.1
30
50
R
V = 25 V, T = 150 °C
R
A
V = 75 V, T = 150 °C
R
A
mV
Forward voltage
I = 1 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
F
I = 10 mA
F
I = 50 mA
1000
1200
1250
F
I = 100 mA
F
I = 150 mA
F
AC Characteristics
-
-
-
-
2
4
pF
ns
Diode capacitance
C
T
V = 0 V, f = 1 MHz
R
Reverse recovery time
t
rr
I = 10 mA, I = 10 mA, measured at I = 1mA ,
F
R
R
R = 100 Ω
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: t = 100ns, D = 0.05,
p
t = 0.6ns, R = 50Ω
r
i
Oscillograph
ΙF
Oscillograph: R = 50Ω, t = 0.35ns,
r
C ≤ 1pF
EHN00019
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-19
2
BAS28...
Reverse current I = ƒ (T )
Forward Voltage V = ƒ (T )
F A
R
A
V = Parameter
I = Parameter
R
F
10 5
nA
BAS 28
EHB00037
1.0
V
Ι F
= 100 mA
VF
10 4
10 3
10 2
10 1
10 mA
1 mA
0.5
0.1 mA
70 V
25 V
0
°C
0
25
50
75
100
150
0
50
100
150
C
T
A
TA
Forward current I = ƒ (V )
Peak forward current I = ƒ (t )
FM p
F
F
T = 25 °C
T = 25 °C
A
A
BAS28
BAS 28
EHB00036
10 2
BAS 28
EHB00035
150
mA
D = 0.005
0.01
Ι FM
Ι F
A
0.02
0.05
10 1
10 0
10-1
0.1
0.2
100
50
0
typ
max
tp
tp
D =
T
T
10-2
10-6
0
0.5
1.0
V
1.5
10-5
10-4
10-3
10-2
10-1 s 100
VF
t
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BAS28...
Forward current I = ƒ (T )
Forward current I = ƒ (T )
F S
F
S
BAS28
BAS28W
220
mA
220
mA
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
15 30 45 60 75 90 105 120
150
T
T
S
S
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
thJS
p
BAS28W
I
/ I
= ƒ (t )
BAS28W
Fmax FDC
p
10 2
10 3
K/W
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2007-04-19
4
Package SOT143
BAS28...
Package Outline
±0.1
1
±0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
+0.1
-0.05
0.08...0.15
0.8
0...8˚
+0.1
-0.05
0.4
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
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5
Package SOT343
BAS28...
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2007-04-19
6
BAS28...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-19
7
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