BAS3007A-RPP-E6327 [INFINEON]
Bridge Rectifier Diode, Schottky, 0.9A, 30V V(RRM),;型号: | BAS3007A-RPP-E6327 |
厂家: | Infineon |
描述: | Bridge Rectifier Diode, Schottky, 0.9A, 30V V(RRM), 二极管 |
文件: | 总6页 (文件大小:124K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS3007A...
Low VF Schottky Diode Array
• Reverse voltage: 30 V
• Forward current: 0.9 A
• Small diode quad array for polarity independence,
reverse polarity protection and low loss
bridge rectification
• Very low forward voltage:
0.5 V typ. @ 0.7 A (per diode)
• Fast switching
1)
• Pb-free (ROHS compliant) package
• Qualified according AEC Q101
BAS3007A-RPP
4
3
+
~
D3
D2
D4
D1
1
2
-
~
Type
BAS3007A-RPP
Package
SOT143
Configuration
bridge
Marking
E1s
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
RMS reverse voltage
Symbol
Value
30
30
Unit
V
2)
V
V
V
R
2)
RM
2)
21
2)
mA
Forward current
I
F
T ≤ 46°C
900
700
S
T ≤ 82°C
S
Non-repetitive peak surge forward current
(t ≤ 10 ms)
I
5
A
FSM
150
°C
Junction temperature
Storage temperature
T
T
-65 ... 150
stg
1Pb-containing package may be available upon special request
2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
2007-11-20
1
BAS3007A...
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 95
Unit
K/W
1)
R
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Reverse current (per diode)
2)
I
µA
V
R
V = 12 V
-
-
-
-
30
350
R
V = 30 V
R
2)3)
Forward voltage (per diode)
V
F
I = 100 mA
-
-
-
-
-
0.35
0.4
0.45
0.5
0.4
0.5
0.55
0.6
F
I = 350 mA
F
I = 500 mA
F
I = 700 mA
F
I = 900 mA
0.6
0.7
F
AC Characteristics
Diode capacitance (per diode)
-
9
15
pF
C
T
V = 5 V, f = 1 MHz
R
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2Pulsed test, t = 300 µs; D = 0.01
p
3When used as shown for Reverse Polarity Protection (RPP, see page 4), the voltage available to the circuit
being protected will be two diode drops below the power supply voltage. In other words, the supply current
will pass through two diodes.
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2
BAS3007A...
Diode capacitance C = ƒ (V )
Forward Voltage V = ƒ (T )
F A
T
R
f = 1MHz (per diode)
I = Parameter (per diode)
F
30
pF
0.7
V
IF = 900mA
0.6
26
24
22
20
18
16
14
12
10
8
0.55
0.5
IF = 700mA
0.45
0.4
IF = 350mA
IF = 100mA
0.35
0.3
0.25
0.2
0.15
0.1
6
0.05
0
4
V
°C
0
5
10
15
20
30
-45
-15
15
45
75
135
V
R
T
A
Forward current I = ƒ (V )
Permissible Reverse voltage V = ƒ (T )
F
F
R
A
T = Parameter (per diode)
t = Paramter, Duty cycle < 0.01
A
p
Device mounted on PCB with R = 160 K/W
th
10 0
35
V
+125°C
+85°C
+25°C
-40°C
25
DC
20
20 ms
A
1 ms
15
10
5
10 -1
0
V
°C
0.15
0.25
0.35
0.45
0.65
0
20
40
60
80
100
130
V
F
T
A
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BAS3007A...
Forward current I = ƒ (T )
F
S
Current flows through two chips
per package at the same time (per array)
1000
mA
800
700
600
500
400
300
200
100
0
°C
0
15 30 45 60 75 90 105 120
150
T
S
Application example BAS3007A-RPP
Advanced Reverse Polarity Protection(RPP): due to diode orientation, circuit at the right
will be protected from damage and will also function normally in the event reverse polarity is
applied to pins 2 and 3 of the BAS3007A-RPP.
Ground
Ground /
2
3
1
+Vs
DC Plug to
power supply
Reverse polarity
protected circuit
+Vs /
Ground
4
+Vs
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Package SOT143
BAS3007A...
Package Outline
±0.1
1
±0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
+0.1
-0.05
0.08...0.15
0.8
0...8˚
+0.1
-0.05
0.4
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
2007-11-20
5
BAS3007A...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-11-20
6
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