BAS4002A-RPP-E6433 [INFINEON]
Bridge Rectifier Diode, Schottky, 0.2A, 40V V(RRM),;型号: | BAS4002A-RPP-E6433 |
厂家: | Infineon |
描述: | Bridge Rectifier Diode, Schottky, 0.2A, 40V V(RRM), 二极管 |
文件: | 总6页 (文件大小:800K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS4002A...
Low VF Schottky Diode Array
• Reverse voltage: 40 V
• Forward current: 0.2 A
• Small diode quad array for polarity independance,
reverse polarity protection and low loss
bridge rectification
• Very low forward voltage: 0.55 @ 0.1 A (per diode)
• Fast switching
• Pb-free (ROHS compliant) package
• Qualified according AEC Q101
BAS4002A-RPP
4
3
+
~
D3
D2
D4
D1
1
2
-
~
Type
BAS4002A-RPP
Package
SOT143
Configuration
bridge
Marking
E9s
Maximum Ratings at T = 25 °C, unless otherwise specified
A
Parameter
Diode reverse voltage
Peak reverse voltage
RMS reverse voltage
Forward current , T ≤ 124 °C
Non-repetitive peak surge forward current
(t ≤ 10 ms)
Symbol
Value
40
40
Unit
V
1)
V
V
V
R
1)
RM
1)
28
1)
mA
A
I
I
200
2
S
F
FSM
°C
Junction temperature
Storage temperature
T
T
150
-65 ...150
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 130
Unit
K/W
2)
R
thJS
1For TA > 25°C the derating of VR and IF has to be considered.
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2008-05-16
1
BAS4002A...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Reverse current (per diode)
1)
I
µA
V
R
V = 30 V
-
-
-
-
2
10
R
V = 40 V
R
1) 2)
Forward voltage
(per diode)
V
F
I = 10 mA
-
-
-
-
0.39
0.49
0.55
0.69
0.44
0.55
0.62
0.79
F
I = 60 mA
F
I = 100 mA
F
I = 200 mA
F
AC Characteristics
Diode capacitance (per diode)
-
2
5
pF
C
T
V = 5 V, f = 1 MHz
R
1Pulsed test, t = 300 µs; D = 0.01
p
2When used as shown for Reverse Polarity Protection (RPP, see page 4), the voltage available to the circuit
being protected will be two diode drops below the power supply voltage. In other words, the supply current
will pass through two diodes.
2008-05-16
2
BAS4002A...
Diode capacitance C = ƒ (V )
Reverse current I = ƒ (T )
R A
T
R
f = 1MHz (per diode)
V = Parameter (per diode)
R
10 -3
A
7
pF
6
5.5
5
10 -4
10 -5
10 -6
10 -7
10 -8
4.5
4
VR = 40 V
30 V
20 V
3.5
3
10 V
2.5
2
1.5
1
V
°C
0
5
10
15
20
30
0
25
50
75
100
150
V
T
A
R
Reverse current I = ƒ(V )
Forward Voltage V = ƒ (T )
F A
R
R
T = Parameter (per diode)
I = Parameter (per diode)
A
F
10 -3
A
0.75
V
10 -4
10 -5
10 -6
10 -7
10 -8
0.65
0.6
IF = 200 mA
100 mA
60 mA
10 mA
0.55
0.5
TA = 125°C
85°C
25°C
0.45
0.4
0.35
0.3
0.25
V
°C
0
5
10
15
20
25
30
40
-50 -25
0
25
50
75
100
150
V
T
A
R
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BAS4002A...
Forward current I = ƒ (V )
Forward current I = ƒ (T )
F S
F
F
(per diode)
BAS4002-RPP
10 0
A
220
mA
10 -1
10 -2
10 -3
10 -4
10 -5
180
160
140
120
100
80
TA=125°C
85°C
25°C
60
- 40°C
40
20
10 -6
0
0
V
°C
0.1
0.2
0.3
0.4
0.5
0.7
0
15 30 45 60 75 90 105 120
150
V
T
S
F
Application example BAS4002A-RPP
Advanced Reverse Polarity Protection(RPP): due to diode orientation, circuit at the right
will be protected from damage and will also function normally in the event reverse polarity is
applied to pins 2 and 3 of the BAS4002A-RPP.
Ground
Ground /
2
3
1
+Vs
DC Plug to
power supply
Reverse polarity
protected circuit
+Vs /
Ground
4
+Vs
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Package SOT143
BAS4002A...
Package Outline
0.1
1
0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
0.08...0.15
+0.1
0.8
-0.05
0...8˚
+0.1
0.4
-0.05
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
2008-05-16
5
BAS4002A...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2008-05-16
6
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