BAS40T1HB4SA1 [INFINEON]

Mixer Diode,;
BAS40T1HB4SA1
型号: BAS40T1HB4SA1
厂家: Infineon    Infineon
描述:

Mixer Diode,

二极管
文件: 总3页 (文件大小:119K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS40  
HiRel Silicon Schottky Diode  
HiRel Discrete and Microwave  
Semiconductor  
General-purpose diodes for high-speed  
switching  
Circuit protection  
Voltage clamping  
High-level detecting and mixing  
Hermetically sealed microwave package  
Space Qualified  
ESA/SCC Detail Spec. No.: 5512/020  
Type Variant No. 03  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking Ordering Code  
see below  
Pin Configuration Package  
BAS40-T1 (ql)  
-
T1  
1
2
(ql) Quality Level:  
P: Professional Quality  
H: High Rel Quality  
S: Space Quality  
ES: ESA Space Quality  
(see order instructions for ordering example)  
IFAG IMM RPD D HIR  
1 of 3  
V2, February 2011  
BAS40  
Maximum Ratings  
Parameter  
Symbol  
VR  
Values  
40  
Unit  
V
Reverse Voltage  
Forward Current  
IF  
120  
mA  
mA  
mW  
°C  
Surge Forward Current 1)  
Power Dissipation 2)  
IFSM  
Ptot  
170  
250  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature 3)  
Junction Temperature  
Thermal Resistance Junction-Case  
Top  
-55 to +150  
-55 to +150  
+250  
Tstg  
Tsol  
Tj  
°C  
°C  
150  
°C  
Rth(j-c)  
100  
K/W  
Electrical Characteristics  
at TA=25°C; unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
DC Characteristics  
Reverse Current 1, VR=40V  
Reverse Current 2, VR=30V  
Forward Voltage 1, IF1=1mA  
Forward Voltage 2, IF2=10mA  
Forward Voltage 3, IF3=40mA  
Differential Forward Resistance 4)  
IF=10mA, IF=15mA  
IR1  
-
-
10  
µA  
µA  
V
IR2  
-
-
1
VF1  
VF2  
VF3  
RFD  
0,29  
0,42  
0,68  
7,5  
0,33  
0,45  
0,7  
10  
0,39  
0,54  
0,85  
11,5  
V
V
AC Characteristics  
Total Capacitance  
CT  
2,2  
2,9  
5,0  
pF  
VR=0V; f=1MHz  
Notes.:  
1.) t 10ms, Duty Cycle=10%  
2.) At TCASE = 125 °C. For TCASE > 125 °C derating is required.  
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.  
VF  
4.)  
RFD=----------------  
-3  
5x10  
A
IFAG IMM RPD D HIR  
2 of 3  
V2, February 2011  
BAS40  
T1 Package  
Symbol  
Millimetre  
min  
1,30  
1,15  
-
0,10  
-
0,06  
5,50  
0,40  
max  
1,45  
1,35  
0,40  
0,50  
0,30  
0,10  
-
X1  
B
A
A
B
C
D
E
F
Y1  
Y2  
C
2
1
D
E
F
H
G
G
G
H
0,60  
Edition 2011-02  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© Infineon Technologies AG 2011  
All Rights Reserved.  
Attention please!  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or  
hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation warranties of non-infringement of intellectual  
property rights of an third party.  
Information  
For further information on technology, delivery terms and conditions and prices please  
contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For  
information on the types in question please contact your nearest Infineon Technologies  
Office.  
Infineon Technologies Components may only be used in life-support devices or systems with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system, or to affect  
the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body, or to  
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to  
assume that the health of the user or other persons may be endangered.  
IFAG IMM RPD D HIR  
3 of 3  
V2, February 2011  

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