BAS40W [INFINEON]
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping); 硅肖特基二极管（通用二极管，高速开关电路保护电压钳位）
| 型号： | BAS40W |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS 40W
Silicon Schottky Diode
● General-purpose diodes for
high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Type
Ordering Code
(tape and reel)
Pin Configuration
Marking Package1)
1
2
3
BAS 40-04W
BAS 40-05W
BAS 40-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
A1
A1
C1
C1
A2
C2
C1/A2 44s
C1/C2 45s
A1/A2 46s
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
V
Reverse voltage
VR
IF
40
Forward current
120
mA
mA
mW
°C
Surge forward current, t ≤ 10 ms
Total power dissipation TS ≤ 106 °C
Junction temperature
IFSM
Ptot
Tj
200
250
150
Operating temperature range
Storage temperature range
Thermal Resistance
Top
Tstg
– 55 … + 150
– 55 … + 150
°C
°C
Junction-ambient2)
Rth JA
Rth JS
≤ 395
≤ 175
K/W
K/W
Junction-soldering point
1) For detailed information see chapter Package Outlines.
2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu.
Semiconductor Group
1
02.96
BAS 40W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
typ.
Unit
min.
max.
DC Characteristics
Breakdown voltage
V(BR)
V
I
(BR) = 10 µA
40
–
–
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
VF
mV
250
350
600
310
450
720
380
500
1000
Reverse current
VR = 30 V
VR = 40 V
IR
µA
–
–
–
–
1
10
Diode capacitance
CT
pF
VR = 0 V, f = 1 MHz
–
–
3
5
–
Charge carrier life time IF = 25 mA τ
10
ps
Differential forward resistance
RF
Ω
IF = 10 mA, f = 10 kHz
–
–
10
2
–
–
Series inductance
LS
nH
Semiconductor Group
2
BAS 40W
Forward current IF = f (VF)
Diode capacitance CT = f (VR)
Semiconductor Group
Reverse current IR = f (VR)
Differential forward resistance
RF = f (IF)
3
BAS 40W
Forward current IF = f (TA; TS*)
Permissible load RthJS = f (tp)
*Package mounted on epoxy
Permissible Pulse load IFmax/IFDC = f (tp)
Semiconductor Group
4
相关型号：
BAS40W-04-13
Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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