BAS70-06B5003 [INFINEON]
Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon, SOT-23, 3 PIN;
| 型号： | BAS70-06B5003 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon, SOT-23, 3 PIN |
| 文件： | 总7页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS70...B5000 / B5003
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Improved operating temperature range
due to extra-low thermal resistance
(see attached Forward current curves)
• High volume packing size:
B5000: 9 x 10kreels, B5003: 10 x 3k reels
• Not for automotive applications*
BAS70
BAS70-04
BAS70-05
BAS70-06
3
3
3
3
D
2
D
2
D
1
D
1
D
1
D
2
1
2
1
2
1
2
1
2
Type
Package
SOT23
SOT23
SOT23
SOT23
Configuration
single
series
common cathode
common anode
L (nH) Marking
S
BAS70
1.8
1.8
1.8
1.8
73s
74s
75s
76s
BAS70-04
BAS70-05
BAS70-06
* Automotive qualification ongoing
2006-08-04
1
BAS70...B5000 / B5003
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Diode reverse voltage
Forward current
Symbol
V
R
Value
70
70
Unit
V
mA
I
F
100
Non-repetitive peak surge forward current
Total power dissipation
I
FSM
mW
°C
P
tot
BAS70, T ≤ 109 °C
BAS70-04, BAS70-06, T ≤ 101 °C
250
250
250
S
S
BAS70-05, T ≤ 95 °C
S
150
Junction temperature
T
j
Operating temperature range
Storage temperature
T
-55 ... 125
-55 ... 150
op
T
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
R
thJS
Value
Unit
K/W
1)
BAS70
BAS70-04, BAS70-06
BAS70-05
≤ 165
≤ 195
≤ 220
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
70
-
typ. max.
DC Characteristics
Breakdown voltage
-
-
-
V
V
(BR)
F
I
= 10 µA
(BR)
0.1
Reverse current
I
µA
R
V = 50 V
R
mV
Forward voltage
V
I = 1 mA
300
600
720
375
705
880
410
750
1000
F
I = 10 mA
F
I = 15 mA
F
2)
-
-
20
Forward voltage matching
∆ V
F
I = 10 mA
F
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2∆V is the difference between lowest and highestV in a multiple diode component.
F
F
2006-08-04
2
BAS70...B5000 / B5003
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
1.5
34
-
2
-
pF
Diode capacitance
C
T
V = 0 , f = 1 MHz
R
-
-
Forward resistance
r
Ω
f
I = 10 mA, f = 10 kHz
F
100 ps
Charge carrier life time
τ
rr
I = 25 mA
F
2006-08-04
3
BAS70...B5000 / B5003
Diode capacitance C = ƒ (V )
Forward resistance r = ƒ (I )
f F
T
R
f = 1MHz
f = 1MHz
BAS 70W/BAS 170W
EHB00044
BAS 70W/BAS 170W
EHB00045
10 3
2.0
pF
Ω
CT
rf
1.5
1.0
0.5
0.0
10 2
10 1
10 0
0
20
40
60
V
80
1
10
mA 100
0.1
VR
Ι F
Reverse current I = ƒ(V )
Forward current I = ƒ (V )
F F
R
R
T = Parameter
A
BAS 70W/BAS 170W
EHB00042
BAS 70W/BAS 170W
EHB00043
102
mA
102
µ A
TA = 150 C
Ι F
Ι R
101
101
85 C
100
100
TA = -40 C
10-1
25 C
85 C
150 C
10-1
25 C
10-2
10-3
10-2
0
20
40
60
V
80
0.0
0.5
1.0
V
1.5
VR
VF
2006-08-04
4
BAS70...B5000 / B5003
Forward current I = ƒ (T )
Forward current I = ƒ (T )
F S
F
S
BAS70B500x
BAS70-04/-06B500x
BAS70Exxx (e.g. E6327)
BAS70-04/-06Exxx (e.g. E6327)
80
80
mA
mA
60
60
50
BAS70-04/-06B500x
BAS70-04/-06Exxxx
50
40
30
20
10
0
BAS70B500x
BAS70Exxxx
40
30
20
10
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Forward current I = ƒ (T )
F
S
BAS70-05B500x
BAS70-05Exxx (e.g. E6327)
80
mA
60
BAS70-05B500x
BAS70-05Exxxx
50
40
30
20
10
0
°C
0
15 30 45 60 75 90 105 120
150
T
S
2006-08-04
5
Package SOT23
BAS70...B5000 / B5003
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2006-08-04
6
BAS70...B5000 / B5003
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2006-08-04
7
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