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BAS70-06W [INFINEON]

Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping); 硅肖特基二极管（通用二极管，高速开关电路保护电压钳位）
BAS70-06W
型号： BAS70-06W
厂家： Infineon    Infineon
描述：

Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
硅肖特基二极管（通用二极管，高速开关电路保护电压钳位）

整流二极管 肖特基二极管 开关 电路保护 光电二极管
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中文：  中文翻译
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BAS 70W  
Silicon Schottky Diode  
● General-purpose diodes for  
high-speed switching  
● Circuit protection  
● Voltage clamping  
● High-level detection and mixing  
Type  
Ordering Code  
(tape and reel)  
Pin Configuration  
Marking  
Package1)  
1
2
3
BAS 70-04W Q62702-A1068  
BAS 70-05W Q62702-A1069  
BAS 70-06W Q62702-A1070  
A1  
A1  
C1  
C2  
A2  
C2  
C1/A2 74s  
C1/C2 75s  
A1/A2 76s  
SOT-323  
Maximum Ratings  
Parameter  
Symbol  
VR  
Values  
Unit  
V
Reverse voltage  
70  
Forward current  
IF  
70  
mA  
mA  
mW  
°C  
Surge forward current, t ≤ 10 ms  
Total power dissipation TS ≤ 91 °C  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
IFSM  
Ptot  
100  
250  
Top  
– 55 … + 150  
– 55 … + 150  
°C  
Tstg  
Junction-ambient1)  
Rth JA  
Rth JS  
≤ 455  
≤ 235  
K/W  
K/W  
Junction-soldering point  
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.  
Semiconductor Group  
1
10.94  
BAS 70W  
Electrical Characteristics  
at TA = 25 °C, unless otherwise specified.  
Parameter  
Symbol  
Value  
typ.  
Unit  
min.  
max.  
DC Characteristics  
Breakdown voltage  
V(BR)  
VF  
V
I
(BR) = 10 µA  
70  
–
–
Forward voltage  
IF = 1 mA  
IF = 10 mA  
IF = 15 mA  
mV  
300  
600  
750  
375  
705  
880  
410  
750  
1000  
Reverse current  
VR = 50 V  
VR = 70 V  
IR  
µA  
–
–
–
–
0.1  
10  
Diode capacitance  
VR = 0 V, f = 1 MHz  
CT  
τ
pF  
ps  
Ω
–
–
1.5  
–
2
Charge carrier life time  
IF = 25 mA  
100  
Differential forward resistance  
rf  
IF = 10 mA, f = 10 kHz  
–
–
34  
2
–
–
Series inductance  
LS  
nH  
Semiconductor Group  
2
BAS 70W  
Forward current IF = f (VF)  
Reverse current IR = f (VR)  
Diode capacitance CT = f (VR)  
Differential forward resistance RF = f (IF)  
Semiconductor Group  
3
BAS 70W  
Permissible Pulse load IF = f (TA; TS*)  
Permissible load RthJS = f (tp)  
* Package mounted on epoxy  
Permissible Pulse load IFmax / IFDC = f (tp)  
Semiconductor Group  
4

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