BAT114-099R [INFINEON]
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators); 硅交叉环四肖特基二极管（高垒二极管双平衡混频器，相位检波器和调制器）
| 型号： | BAT114-099R |
| 厂家： | 
Infineon |
| 描述： | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Crossover Ring Quad Schottky Diode
BAT 114-099R
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
1)
Type
Marking Ordering Code Pin Configuration
(taped)
Package
BAT 114-099R 14s
Q62702-A1006
SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Symbol
IF
Limit Values Unit
Forward current
90
mA
°C
Operation temperature
Storage temperature
Power dissipation, TS ≤ 70 °C
Top
− 55 to + 150
− 55 to + 150
100
Tstg
°C
Ptot
mW
Semiconductor Group
1
02.96
BAT 114-099R
Thermal Resistance
(per diode)
Parameter
Symbol
RthJS
Limit Values
Unit
K/W
K/W
Junction to soldering point
≤ 780
1)
Junction to ambient
RthJA
≤ 1020
1)
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
Electrical Characteristics
(per diode; TA = 25 °C)
Parameter
Symbol
Limit Values
min. typ. max.
Unit
Forward voltage
IF = 1 mA
IF = 10 mA
VF
V
−
−
0.58 0.7
0.68 0.78
1)
Forward voltage matching
IF = 10 mA
∆VF
CT
mV
pF
Ω
−
−
−
−
20
0.25 −
5.5
Diode capacitance
VR = 0 V, f = 1 MHz
Forward resistance
IF = 10 mA / 50 mA
RF
−
1)
∆VF is difference between lowest and highest VF in component.
Semiconductor Group
2
BAT 114-099R
Forward Current IF = f(VF)
Semiconductor Group
3
相关型号：
BAT120CT/R
DIODE 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-73, SMD, 4 PIN, Signal Diode
NXP
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