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BAT14-074ES

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HiRel Silicon Schottky Diode  
BAT 14  
Features  
¥ HiRel Discrete and Microwave Semiconductor  
¥ Medium barrier diodes for detector and mixer  
applications  
¥ Hermetically sealed microwave package  
¥
qualified  
¥ ESA/SCC Detail Spec. No.: 5106/014  
T
ESD:  
Electrostatic discharge sensitive device,  
observe handling precautions!  
T1  
Type  
Marking  
Ordering Code  
Pin Configuration  
Package  
BAT 14-013 (ql)  
-
see below  
T
BAT 14-014 (ql)  
-
-
see below  
see BAT14-013  
T1  
BAT 14-033 (ql)  
BAT 14-034 (ql)  
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-043 (ql)  
BAT 14-044 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-063 (ql)  
BAT 14-064 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-073 (ql)  
BAT 14-074 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-093 (ql)  
BAT 14-094 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-103 (ql)  
BAT 14-104 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-113 (ql)  
BAT 14-114 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
BAT 14-123 (ql)  
BAT 14-124 (ql)  
-
-
see below  
see below  
see BAT14-013  
see BAT14-013  
T
T1  
(ql) Quality Level:  
P: Professional Quality,  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code: Q62702D1346  
Ordering Code: on request  
Ordering Code: on request  
Ordering Code: Q62702D1345  
ES: ESA Space Quality,  
(see Chapter Order Instructions for ordering example)  
Semiconductor Group  
1
Draft A03 1998-04-01  
BAT 14  
Table 1  
Maximum Ratings  
Parameter  
Symbol  
Limit Values  
Unit  
V
Reverse voltage  
VR  
IF  
3
Forward current  
mA  
BAT14-013, -014, -033, -034  
100  
100  
50  
50  
50  
BAT14-043, -044, -063, -064  
BAT14-073, -074, -093, -094  
BAT14-103, -104, -113, -114  
BAT14-123, -124  
Power dissipation  
Ptot  
mW  
BAT14-013, -014, -033, -034  
BAT14-043, -044, -063, -064  
BAT14-073, -074, -093, -094  
BAT14-103, -104, -113, -114  
BAT14-123, -124  
100  
100  
50  
50  
50  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Top  
Tstg  
Tsol  
EB  
- 55 to + 150  
- 65 to + 175  
+ 220  
°C  
°C  
°C  
Erg  
Burn-out energy 1)  
BAT14-013, -014, -033, -034  
BAT14-043, -044, -063, -064  
BAT14-073, -074, -093, -094  
BAT14-103, -104, -113, -114  
BAT14-123, -124  
5.0  
5.0  
2.0  
2.0  
1.0  
1)  
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General  
criterion for burn-out energy is a 3 dB increase in noise figure.  
Semiconductor Group  
2
Draft A03 1998-04-01  
BAT 14  
Electrical Characteristics  
Table 2  
DC Characteristics at TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
typ.  
max.  
Breakdown voltage  
IR = 10 mA  
V(BR)  
IR  
3
-
-
V
Reverse current  
VR = 2 V  
-
-
1
mA  
V
Forward voltage 1  
VF1  
IF1 = 0.01 mA  
BAT14-013, -014, -033, -034  
-
-
-
-
-
-
-
-
-
-
0.31  
0.32  
0.33  
0.35  
0.36  
BAT14-043, -044, -063, -064  
BAT14-073, -074, -093, -094  
BAT14-103, -104, -113, -114  
BAT14-123, -124  
Forward voltage 2  
IF2 = 1 mA  
BAT14-013, -014, -033, -034  
VF2  
V
-
-
-
-
-
0.42  
0.44  
0.45  
0.46  
0.48  
0.44  
0.45  
0.46  
0.48  
0.50  
BAT14-043, -044, -063, -064  
BAT14-073, -074, -093, -094  
BAT14-103, -104, -113, -114  
BAT14-123, -124  
Series resistance 2)  
RF  
W
IF1 = 10 mA, IF2 = 50 mA  
BAT14-013, -014  
BAT14-033, -034  
BAT14-043, -044  
BAT14-063, -064  
BAT14-073, -074  
BAT14-093, -094  
BAT14-103, -104  
BAT14-113, -114  
BAT14-123, -124  
-
-
-
-
-
-
-
-
-
3.0  
4.0  
3.5  
4.5  
4.5  
5.5  
6.0  
7.0  
8.0  
3.5  
4.5  
4.0  
5.0  
5.5  
6.5  
7.0  
8.0  
9.0  
DVF  
40 ´ 10Ð3  
2)  
------------------------  
RF =  
W
Semiconductor Group  
3
Draft A03 1998-04-01  
BAT 14  
Table 3  
AC Characteristics at TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
typ.  
max.  
Total capacitance  
CT  
pF  
VR = 0 V, f = 1 MHz  
BAT14-013, -014, -033, -034  
BAT14-043, -044, -063, -064  
BAT14-073, -074, -093, -094  
BAT14-103, -104, -113, -114  
BAT14-123, -124  
-
-
-
-
-
0.35  
0.30  
0.27  
0.23  
0.20  
0.60  
0.35  
0.30  
0.25  
0.22  
Noise figure  
NF  
dB  
I.F. = 30 MHz  
LO power = 0 dBm  
LO = 9.375 GHz  
BAT14-013, -014  
BAT14-033, -034  
BAT14-043, -044  
BAT14-063, -064  
BAT14-073, -074  
BAT14-093, -094  
BAT14-103, -104  
BAT14-113, -114  
BAT14-123, -124  
-
-
-
-
-
-
-
-
-
5.3  
6.3  
5.3  
6.3  
5.3  
6.3  
5.7  
7.2  
8.0  
5.5  
6.5  
5.5  
6.5  
5.5  
6.5  
6.0  
7.5  
9.0  
Semiconductor Group  
4
Draft A03 1998-04-01  
BAT 14  
Order Instructions  
Full type variant including type variant and quality level must be specified by the orderer.  
For HiRel Discrete and Microwave Semiconductors the ordering code specifies device  
family and quality level only.  
Ordering Form:  
Ordering Code: QÉ  
BAT14- (x) (ql)  
(x): Type Variant  
(ql): Quality Level  
Ordering Example:  
Ordering Code: Q62702D1345  
BAT14-014 ES  
For BAT14-014 in T1 Package; ESA Space Quality Level  
Further Information  
See our WWW-Pages:  
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)  
www.siemens.de/semiconductor/products/35/35.htm  
Ð HiRel Discrete and Microwave Semiconductors  
www.siemens.de/semiconductor/products/35/353.htm  
Please contact also our marketing division:  
Tel.: ++89 6362 4480  
Fax.: ++89 6362 5568  
e-mail: martin.wimmers@hl.siemens.de  
Semiconductor Group  
5
Draft A03 1998-04-01  
BAT 14  
Figure 1  
Symbol  
T Package  
Millimetre  
max.  
1.45  
min.  
1.30  
1.15  
-
A
B
C
1.35  
0.4  
Semiconductor Group  
6
Draft A03 1998-04-01  
BAT 14  
Figure 2  
Symbol  
T1 Package  
Millimetre  
max.  
1.45  
1.35  
0.40  
0.50  
0.30  
0.10  
-
min.  
1.30  
1.15  
-
A
B
C
D
E
F
0.10  
-
0.06  
5.50  
0.40  
G
H
0.60  
Semiconductor Group  
7
Draft A03 1998-04-01  

BAT14-074ES 相关器件

型号 制造商 描述 价格 文档
BAT14-074H INFINEON Mixer Diode, Medium Barrier, 5.5dB Noise Figure, Silicon, HERMETIC SEALED PACKAGE-2 获取价格
BAT14-074P INFINEON 暂无描述 获取价格
BAT14-074S INFINEON Mixer Diode, Medium Barrier, 5.5dB Noise Figure, Silicon 获取价格
BAT14-090D INFINEON Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 获取价格
BAT14-090S INFINEON Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 获取价格
BAT14-093 INFINEON HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 获取价格
BAT14-093ES INFINEON Mixer Diode, Medium Barrier, 6.5dB Noise Figure, Silicon 获取价格
BAT14-093H INFINEON Mixer Diode, Medium Barrier, 6.5dB Noise Figure, Silicon 获取价格
BAT14-093P INFINEON Mixer Diode, Medium Barrier, 6.5dB Noise Figure, Silicon 获取价格
BAT14-093S INFINEON Mixer Diode, Medium Barrier, 6.5dB Noise Figure, Silicon 获取价格

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